# US 9,437,780 B2 · Optoelectronic semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,437,780 B2 - Document ID: US9437780B2 - Status: Granted - Kind: B2 - Application number: 12/562,917 - Filed: 2009-09-18 - Published: 2010-03-04 - Granted: 2016-09-06 - Earliest claimed: 2005-02-21 - Assignees: Epistar Corporation - Applicants: Tsun-Kai Ko; Schang-Jing Hon; Chien-Kai Chung; Hui-Chen Yeh; An-Ju Lin; Chien-Fu Shen; Chen Ou - Inventors: Tsun-Kai Ko; Schang-Jing Hon; Chien-Kai Chung; Hui-Chen Yeh; An-Ju Lin; Chien-Fu Shen; Chen Ou - Web page: https://patentgrep.com/patent/US9437780B2 ## CPC - H01L 33/382 - H01L 33/14 - H01L 33/22 - H01L 33/42 - H01L 33/44 - H01L 2924/0002 - H01L 2924/00 - H01L ## Abstract An optoelectronic semiconductor device in accordance with an embodiment of present invention includes a conversion unit having a first side; an electrical connector; a contact layer having an outer perimeter; and at least three successive discontinuous-regions formed along the outer perimeter and having at least one different factor; wherein the electrical connector, the contact layer, and the discontinuous-regions are formed on the first side of the conversion unit. ## Claims ### Claim 1 An optoelectronic semiconductor device, comprising: a substrate; a semiconductor system including a first conductivity layer, a second conductivity layer, and a conversion unit between the first conductivity layer and the second conductivity layer, wherein the first conductivity layer is closer to the substrate than the second conductivity layer is to the substrate, the second conductivity layer comprises a top surface perpendicular to a thickness direction of the semiconductor system, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; an electrical connector on the semiconductor system; a contact layer having an outer perimeter extending around an entire outer edge of the contact layer and being at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system; and at least three successive discontinuous regions connecting to the outer perimeter, extending inwardly from the outer perimeter in a non-periodic pattern, and extending parallel to the top surface of the second conductivity layer, wherein the at least three successive discontinuous regions have at least one different factor, and a bottom of the at least three successive discontinuous regions exposes the top surface of the second conductivity layer. ### Claim 2 (depends on 1) The optoelectronic semiconductor device of claim 1, wherein the factor comprises an angle, a length, a width, a depth, or a distance. ### Claim 3 (depends on 1) The optoelectronic semiconductor device of claim 1, wherein the electrical connector comprises a root part, a branch part, and an end part. ### Claim 4 (depends on 1) The optoelectronic semiconductor device of claim 1, wherein the electrical connector further comprises a region connecting to an outer circuit. ### Claim 5 (depends on 1) The optoelectronic semiconductor device of claim 1, wherein the electrical connector further comprises at least one intersection point with the discontinuous regions in one projection direction. ### Claim 6 (depends on 1) The optoelectronic semiconductor device of claim 1, further comprising a current blocking region disposed under at least one of the discontinuous regions. ### Claim 7 (depends on 1) The optoelectronic semiconductor device of claim 1, wherein each of the discontinuous regions comprises only one opening at the outer perimeter. ### Claim 8 (depends on 1) The optoelectronic semiconductor device of claim 1, wherein the discontinuous regions comprise at least one current blocking region. ### Claim 9 (depends on 1) The optoelectronic semiconductor device of claim 1, wherein the outer perimeter is the outermost perimeter of the contact layer. ### Claim 10 An optoelectronic semiconductor device, comprising: a substrate; a semiconductor system including a first conductivity layer, a second conductivity layer, and a conversion unit between the first conductivity layer and the second conductivity layer, wherein the first conductivity layer is closer to the substrate than the second conductivity layer is to the substrate, the second conductivity layer comprises a top surface perpendicular to a thickness direction of the semiconductor system, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector adjacent to the conversion unit; a second electrical connector constructing one of two ends of a current channel with the first electrical connector; a contact layer having an outer perimeter extending around an entire outer edge of the contact layer and being at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system; and a plurality of discontinuous regions connecting to the outer perimeter, extending inwardly from the outer perimeter in a non-periodic pattern, and extending parallel to the top surface of the second conductivity layer, wherein a bottom of the plurality of discontinuous regions exposes the top surface of the second conductivity layer. ### Claim 11 (depends on 10) The optoelectronic semiconductor device of claim 10, wherein the distances from each discontinuous region to the nearest electrical connector are substantially the same. ### Claim 12 (depends on 10) The optoelectronic semiconductor device of claim 10, wherein the conversion unit further comprises a first side and a second side opposite to the first side, and the first electrical connector and the second electrical connector are on the first side and on the second side, respectively. ### Claim 13 (depends on 10) The optoelectronic semiconductor device of claim 10, wherein the substrate has a top side, and the first electrical connector and the second electrical connector are on the top side of the substrate. ### Claim 14 (depends on 10) The optoelectronic semiconductor device of claim 10 further comprising an ohmic contact region disposed under the contact layer, the discontinuous region, or both of them. ### Claim 15 (depends on 10) The optoelectronic semiconductor device of claim 10, wherein at least one of the discontinuous regions deviates from an overall variation tendency. ### Claim 16 (depends on 10) The optoelectronic semiconductor device of claim 10, wherein at least one of the first electrical connector and the second electrical connector is in bilateral symmetry. ### Claim 17 (depends on 10) The optoelectronic semiconductor device of claim 10, wherein at least two of the discontinuous regions have a common opening at the outer perimeter. ### Claim 18 (depends on 10) The optoelectronic semiconductor device of claim 10, wherein the outer perimeter is the outermost perimeter of the contact layer. ### Claim 19 An optoelectronic semiconductor device, comprising: a substrate; a semiconductor system including a first conductivity layer, a second conductivity layer, and a conversion unit between the first conductivity layer and the second conductivity layer, wherein the first conductivity layer is closer to the substrate than the second conductivity layer is to the substrate, the second conductivity layer comprises a top surface perpendicular to a thickness direction of the semiconductor system, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; an electrical connector disposed on one side of the conversion unit; a contact layer having an outer perimeter extending around an entire outer edge of the contact layer and being at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system; and a plurality of discontinuous regions connecting to the outer perimeter, extending inwardly from the outer perimeter in a non-periodic pattern toward the electrical connector, extending parallel to the top surface of the second conductivity layer, and presenting an irregular variation in one dimension, and a bottom of the plurality of discontinuous regions exposes the top surface of the second conductivity layer. ### Claim 20 (depends on 19) The optoelectronic semiconductor device of claim 19, wherein the contact layer and the discontinuous regions are disposed between the electrical connector and the conversion unit. ### Claim 21 (depends on 19) The optoelectronic semiconductor device of claim 19, wherein the discontinuous regions have the discontinuity in at least one of the geometry, the material, the physical property, and the chemical property. ### Claim 22 (depends on 19) The optoelectronic semiconductor device of claim 19, further comprising an ohmic contact region disposed under the contact layer, the discontinuous regions, or both of them; wherein the ohmic contact region includes a protruding space, a depressive space, or both of them, the geometry of which is at least one of the pyramid, the cone, or the frustum. ### Claim 23 (depends on 19) The optoelectronic semiconductor device of claim 19, wherein the outer perimeter is the outermost perimeter of the contact layer.