# US 9,437,779 B2 · Semiconductor light emitting device and method for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,437,779 B2 - Document ID: US9437779B2 - Status: Granted - Kind: B2 - Application number: 14/741,789 - Filed: 2015-06-17 - Published: 2015-10-29 - Granted: 2016-09-06 - Earliest claimed: 2011-03-03 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Kabushiki Kaisha Toshiba - Inventors: Koji Asakawa; Akira Fujimoto; Ryota Kitagawa; Kumi Masunaga; Takanobu Kamakura; Shinji Nunotani - Web page: https://patentgrep.com/patent/US9437779B2 ## CPC - H10H 20/831: characterised by their shape - H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions - H10H 20/824: comprising only Group III-V materials, e.g. GaP - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/832: characterised by their material - H10H 20/018: {Bonding of wafers} - H10H 20/032: {of electrodes} - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10H 20/8312: {extending at least partially through the bodies} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract According to one embodiment, a semiconductor light emitting device includes a structure, a first electrode layer, and a second electrode layer. The structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer is provided on the first semiconductor layer side of the structure. The first electrode layer is made of metal and contains a portion contacting the first semiconductor layer. The second electrode layer is provided on the second semiconductor layer side of the structure. The second electrode layer has a metal portion with a thickness of not less than 10 nanometers and not more than 50 nanometers, and a plurality of openings piercing the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. ## Claims ### Claim 1 A semiconductor light emitting device comprising: a first electrode layer; a second electrode layer; a first semiconductor layer of a first conductivity type provided between the first electrode layer and the second electrode layer, the first semiconductor layer including a first nitride semiconductor; a second semiconductor layer of a second conductivity type provided between the first semiconductor layer and the second electrode layer, the second semiconductor layer including a second nitride semiconductor; and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the light emitting layer including a third nitride semiconductor; a distance between the first electrode layer and the second electrode layer being not more than 20 micrometers, the first electrode layer including a metal layer, the metal layer contacting the first semiconductor layer, and a thickness of the metal layer being not less than 1 micrometer; and the second electrode layer including a metal portion and a plurality of openings piercing the metal portion in a direction from the second semiconductor layer toward the first semiconductor layer, the metal portion directly contacting the second semiconductor layer, a thickness of the metal portion being not less than 10 nanometers and not more than 50 nanometers, and each of the openings viewed in the direction having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. ### Claim 2 (depends on 1) The device according to claim 1, wherein the first electrode layer is formed by plating. ### Claim 3 (depends on 1) The device according to claim 1, wherein the metal portion contains silver. ### Claim 4 (depends on 1) The device according to claim 1, wherein the equivalent circle diameter is not more than ½ of a center wavelength of the light. ### Claim 5 (depends on 1) The device according to claim 1, wherein the second electrode layer is in ohmic contact with the second semiconductor layer. ### Claim 6 (depends on 1) The device according to claim 1, wherein the light emitting layer emits light with a central wavelength of not less than 400 nanometers and not more than 650 nanometers. ### Claim 7 (depends on 1) The device according to claim 1, wherein a sheet resistance of the second electrode layer is not more than 10 Ω/square. ### Claim 8 (depends on 1) The device according to claim 1, wherein the thickness of the first electrode layer is not more than 500 micrometers. ### Claim 9 (depends on 1) The device according to claim 1, wherein a light emitted from the light emitting layer light is blue light. ### Claim 10 (depends on 1) The device according to claim 1, wherein the first semiconductor layer, the light emitting layer and the second semiconductor layer are formed on a substrate, and the first electrode layer is formed at a face of the first semiconductor layer exposed by removing the substrate. ### Claim 11 (depends on 1) The device according to claim 1, wherein the metal layer is a silver layer and the metal portion contains silver. ### Claim 12 (depends on 1) The device according to claim 1, further comprising a support substrate, a part of the support substrate being disposed between the first electrode layer and the first semiconductor layer provided on the first semiconductor layer side of the structure, the support substrate layer including a through hole along the direction, and the first electrode layer contacts contacting the first semiconductor layer via the through hole. ### Claim 13 (depends on 12) The device according to claim 12, wherein the metal layer is a silver layer and the metal portion contains silver.