# US 9,437,773 B2 · Semiconductor light-emitting element and manufacturing method for the same

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- Number: US 9,437,773 B2
- Document ID: US9437773B2
- Status: Granted
- Kind: B2
- Application number: 14/548,534
- Filed: 2014-11-20
- Published: 2015-05-21
- Granted: 2016-09-06
- Earliest claimed: 2013-11-21
- Assignees: Rohm Co., Ltd.
- Applicants: Rohm Co., Ltd.
- Inventors: Yohei Ito
- Web page: https://patentgrep.com/patent/US9437773B2

## CPC

- H10H 20/01: Manufacture or treatment
- H10W 72/0198: {batch processes}
- H10W 72/073: {of die-attach connectors}
- H10H 20/018: {Bonding of wafers}
- H10H 20/032: {of electrodes}
- H10H 20/8316: {Multi-layer electrodes comprising at least one discontinuous layer}
- H10H 20/833: Transparent materials
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor light-emitting element includes a substrate, a first metal layer, a second metal layer, a translucent conductive layer, and a semiconductor layer with a light-emitting region. The translucent conductive layer includes an end face intersecting a plane orthogonal to the thickness direction of the substrate. The substrate includes an end face intersecting a plane orthogonal to the thickness direction. The end face of the translucent conductive layer is located inwardly of the end face of the substrate as viewed in the thickness direction.

## Claims

### Claim 1

A semiconductor light-emitting element comprising:
a substrate;
a first metal layer supported by the substrate;
a second metal layer supported by the substrate;
a translucent conductive layer supported by the substrate; and
a semiconductor layer supported by the substrate and including a light-emitting region;
wherein the translucent conductive layer includes an end face that intersects a plane orthogonal to a thickness direction of the substrate,
the substrate includes an end face that intersects a plane orthogonal to the thickness direction,
the semiconductor layer includes an end face that intersects a plane orthogonal to the thickness direction, the end face of the translucent conductive layer being flush with the end face of the semiconductor layer, and
the end face of the translucent conductive layer is located inwardly of the end face of the substrate as viewed in the thickness direction.

### Claim 2 (depends on 1)

The semiconductor light-emitting element according to claim 1, wherein the second metal layer includes a laminated part and an extended part, the laminated part being configured to overlap with the translucent conductive layer as viewed in the thickness direction, the extended part being connected to an outer peripheral portion of the laminated part and extending toward the translucent conductive layer in the thickness direction, and
wherein the end face of the translucent conductive layer is covered by the extended part.

### Claim 3 (depends on 2)

The semiconductor light-emitting element according to claim 2, wherein an outer peripheral surface of the extended part is located inwardly of the end face of the substrate as viewed in the thickness direction.

### Claim 4 (depends on 3)

The semiconductor light-emitting element according to claim 3, wherein the outer peripheral surface of the extended part is flat in the thickness direction.

### Claim 5 (depends on 2)

The semiconductor light-emitting element according to claim 2, wherein the extended part includes a flange part spaced apart from the first metal layer and offset toward the semiconductor layer, and
wherein the flange part includes an end face that intersects a plane orthogonal to the thickness direction, and the end face of the flange part is flush with the end face of the substrate as viewed in the thickness direction.

### Claim 6 (depends on 1)

The semiconductor light-emitting element according to claim 1, wherein the translucent conductive layer includes an insulating material part and a metal material part, the insulating material part having translucency and no conductivity, the metal material part having conductivity and no translucency and being surrounded by the insulating material part as viewed in the thickness direction to pass through in the thickness direction.

### Claim 7 (depends on 1)

The semiconductor light-emitting element according to claim 1, wherein the translucent conductive layer is made up of a single translucent conductive material part.

### Claim 8 (depends on 1)

The semiconductor light-emitting element according to claim 1, wherein each of the first metal layer and the second metal layer contains Au.

### Claim 9 (depends on 1)

The semiconductor light-emitting element according to claim 1, wherein the end face of the translucent conductive layer and the end face of the substrate are each rectangular as viewed in the thickness direction.

### Claim 10 (depends on 9)

The semiconductor light-emitting element according to claim 9, wherein the end face of the substrate is constituted by a cut surface formed across an entire area of the end face in the thickness direction.

### Claim 11 (depends on 1)

The semiconductor light-emitting element according to claim 1, further comprising a surface electrode provided on the semiconductor layer.

### Claim 12 (depends on 11)

The semiconductor light-emitting element according to claim 11, wherein the substrate includes a back surface opposite to the semiconductor layer and provided with a back electrode in conduction with the semiconductor layer via the translucent conductive layer.