# US 9,437,772 B2 · Method of manufacture of advanced heterojunction transistor and transistor laser

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- Number: US 9,437,772 B2
- Document ID: US9437772B2
- Status: Granted
- Kind: B2
- Application number: 14/217,022
- Filed: 2014-03-17
- Published: 2014-09-18
- Granted: 2016-09-06
- Earliest claimed: 2013-03-15
- Applicants: Matthew H. Kim
- Inventors: Matthew H. Kim
- Web page: https://patentgrep.com/patent/US9437772B2

## CPC

- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H01S 5/06203: {Transistor-type lasers (H01S5/0608 takes precedence)}
- H01S 5/18341: {Intra-cavity contacts}
- H01S 5/3409: {special GRINSCH structures}
- H01S 5/34306: {emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers}
- H01S 5/34346: {characterised by the materials of the barrier layers}
- H10D 10/021: {of heterojunction BJTs [HBT]}
- H10D 10/821: {Vertical heterojunction BJTs}
- H10D 62/177: {Base regions of bipolar transistors, e.g. BJTs or IGBTs}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10H 20/824: comprising only Group III-V materials, e.g. GaP
- H01S 5/0215: {Bonding to the substrate}
- H01S 5/3412: {quantum box or quantum dash}
- H01S 5/3422: {comprising type-II quantum wells or superlattices}
- H01S 5/34333: {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Methods of manufacture of advanced heterojunction transistors and transistor lasers, and their related structures, are described herein. Other embodiments are also disclosed herein.

## Claims

### Claim 1

A heterojunction bipolar transistor comprising:
a GeSn base region;
an emitter base junction comprising a first conduction band offset; and
a base collector junction comprising a second conduction band offset;
wherein:
the first conduction band offset is less than 0.1 electron volts; and
the second conduction band offset is less than 0.1 electron volts.

### Claim 2 (depends on 1)

The heterojunction bipolar transistor of claim 1, wherein the heterojunction bipolar transistor is an NPN device.

### Claim 3 (depends on 1)

The heterojunction bipolar transistor of claim 1, wherein the GeSn base region comprises a graded Ge—GeSn base region.

### Claim 4 (depends on 1)

The heterojunction bipolar transistor of claim 1, wherein the GeSn base region comprises a Sn content varying from 0% to approximately 20% or less.

### Claim 5 (depends on 1)

The heterojunction bipolar transistor of claim 1, wherein the GeSn base region comprises a GeSn quantum well or a GeSn quantum dot, and wherein the GeSn quantum well or the GeSn quantum dot is part of an active region of a light emitting transistor laser.

### Claim 6 (depends on 1)

The heterojunction bipolar transistor of claim 1, wherein:
the heterojunction bipolar transistor comprises a symmetric double heterojunction bipolar transistor.

### Claim 7 (depends on 1)

The heterojunction bipolar transistor of claim 1, further comprising:
an emitter comprising GaAs; and
a collector comprising GaAs.

### Claim 8 (depends on 1)

The heterojunction bipolar transistor of claim 1, further comprising:
an emitter comprising InGaP; and
a collector comprising GaAs.

### Claim 9 (depends on 8)

The heterojunction bipolar transistor of claim 8, wherein the InGaP is ordered.

### Claim 10 (depends on 1)

The heterojunction bipolar transistor of claim 1, further comprising:
an emitter comprising AlGaAs; and
a collector comprising GaAs.

### Claim 11 (depends on 1)

The heterojunction bipolar transistor of claim 1, further comprising:
an emitter comprising GaAs; and
a collector comprising GaN.

### Claim 12 (depends on 11)

The heterojunction bipolar transistor of claim 11, wherein the collector is non-polar.

### Claim 13 (depends on 1)

The heterojunction bipolar transistor of claim 1, further comprising:
an emitter comprising InGaP; and
a collector comprising GaN.

### Claim 14 (depends on 13)

The heterojunction bipolar transistor of claim 13, wherein the InGaP is ordered.

### Claim 15 (depends on 13)

The heterojunction bipolar transistor of claim 13, wherein the GaN is non-polar.

### Claim 16 (depends on 1)

The heterojunction bipolar transistor of claim 1, further comprising:
an emitter comprising SiGeSn; and
a collector comprising SiGeSn;
wherein:
the SiGeSn of the emitter strains the GeSn base region; and
the SiGeSn of the collector strains the GeSn base region.

### Claim 17 (depends on 16)

The heterojunction bipolar transistor of claim 16, wherein:
the SiGeSn of the emitter strains the GeSn base region by tensilely stressing the GeSn base region; and
the SiGeSn of the collector strains the GeSn base region by tensilely stressing the GeSn base region.

### Claim 18 (depends on 16)

The heterojunction bipolar transistor of claim 16, wherein:
the SiGeSn of the emitter strains the GeSn base region by compressively stressing the GeSn base region; and
the SiGeSn of the collector strains the GeSn base region by compressively stressing the GeSn base region.

### Claim 19 (depends on 1)

The heterojunction bipolar transistor of claim 1, wherein the GeSn base region is located over a Si substrate.

### Claim 20 (depends on 1)

The heterojunction bipolar transistor of claim 1, wherein the heterojunction bipolar transistor comprises a laser.

### Claim 21 (depends on 1)

The heterojunction bipolar transistor of claim 1, wherein the GeSn base region comprises compressively strained GeSn.

### Claim 22 (depends on 1)

The heterojunction bipolar transistor of claim 1, wherein the GeSn base region comprises relaxed GeSn.

### Claim 23 (depends on 1)

The heterojunction bipolar transistor of claim 1, wherein the GeSn base region comprises GeSn as an indirect bandgap semiconductor.

### Claim 24 (depends on 1)

The heterojunction bipolar transistor of claim 1, wherein the GeSn base region comprises GeSn as a direct bandgap semiconductor.

### Claim 25 (depends on 1)

The heterojunction bipolar transistor of claim 1, wherein the GeSn base region comprises a GeSn active region within a light emitting device or a transistor laser.

### Claim 26 (depends on 1)

The heterojunction bipolar transistor of claim 1, wherein the GeSn base region comprises a direct bandgap GeSn active region that is part of a light emitting device or transistor laser.

### Claim 27

A method of manufacturing a heterojunction bipolar transistor comprising:
forming a GeSn base region;
forming an emitter base junction comprising a first conduction band offset, the first conduction band offset being less than 0.1 electron volts; and
forming a base collector junction comprising a second conduction band offset, the second conduction band offset being less than 0.1 electron volts.

### Claim 28 (depends on 27)

The method of claim 27, wherein forming the GeSn base region comprises forming the GeSn base region to comprise a GeSn quantum well or a GeSn quantum dot, wherein the GeSn quantum well or the GeSn quantum dot is surrounded by GaAs or Ge P-type regions.

### Claim 29 (depends on 27)

The method of claim 27, further comprising wafer bonding a GaN collector to the GeSn base region.

### Claim 30 (depends on 27)

The method of claim 27, wherein:
the heterojunction bipolar transistor comprises a symmetric double heterojunction bipolar transistor.

### Claim 31

A device comprising:
a first heterojunction bipolar transistor comprising a PNP device having a first GeSn base region, a first emitter base junction, and a first base collector junction; and
a second heterojunction bipolar transistor comprising an NPN device having a second GeSn base region, a second emitter base junction, and a second base collector junction;
wherein:
the first heterojuction biopolar transistor and the second heterojunction bipolar transistor are located over a common substrate;
the first emitter base junction comprises a first conduction band offset less than 0.1 electron volts;
the first base collector junction comprises a second conduction band offset less than 0.1 electron volts;
the second emitter base junction comprises a third conduction band offset less than 0.1 electron volts; and
the second base collector junction comprises a fourth conduction band offset less than 0.1 electron volts.

### Claim 32

A method of manufacturing a device comprising:
forming a first heterojunction bipolar transistor over a common substrate, the first heterojunction bipolar transistor comprising a PNP device having a first GeSn base region, a first emitter base junction, and a first base collector junction; and
forming a second heterojunction bipolar transistor over the common substrate, the second heterojunction bipolar transistor comprising an NPN device having a second GeSn base region, a second emitter base junction, and a second base collector junction;
wherein:
the first emitter base junction comprises a first conduction band offset less than 0.1 electron volts;
the first base collector junction comprises a second conduction band offset less than 0.1 electron volts;
the second emitter base junction comprises a third conduction band offset less than 0.1 electron volts; and
the second base collector junction comprises a fourth conduction band offset less than 0.1 electron volts.

### Claim 33

A transistor laser comprising:
a heterojunction bipolar transistor comprising:
a GeSn active region;
an emitter base junction comprising a first conduction band offset; and
a base collector junction comprising a second conduction band offset;
wherein:
the first conduction band offset is less than 0.1 electron volts; and
the second conduction band offset is less than 0.1 electron volts.

### Claim 34 (depends on 33)

The transistor laser of claim 33, wherein the GeSn active region comprises a GeSn quantum well.

### Claim 35 (depends on 34)

The transistor laser of claim 34, wherein the GeSn quantum well comprises a Sn percentage of approximately 0% to 10% within the GeSn quantum well.

### Claim 36 (depends on 33)

The transistor laser of claim 33, wherein the GeSn active region comprises a GeSn quantum dot.

### Claim 37 (depends on 36)

The transistor laser of claim 36, wherein the GeSn quantum dot comprises a Sn percentage of approximately 10% to 20% within the GeSn quantum dot.

### Claim 38 (depends on 33)

The transistor laser of claim 33, wherein the GeSn active region comprises a GeSn quantum well or a GeSn quantum dot, and wherein the GeSn quantum well or the GeSn quantum dot is located within a Ge barrier.

### Claim 39 (depends on 33)

The transistor laser of claim 33, wherein the GeSn active region comprises a GeSn quantum well or a GeSn quantum dot, and wherein the GeSn quantum well or the GeSn quantum dot is located within a GaAs barrier.

### Claim 40 (depends on 33)

The transistor laser of claim 33, wherein the GeSn active region comprises a GeSn quantum well or a GeSn quantum dot, and wherein:
when the GeSn active region comprises the GeSn quantum well, the transistor laser comprises a laser structure; and
when the GeSn active region comprises the GeSn quantum dot, the transistor laser comprises the laser structure.

### Claim 41

A method of forming a transistor laser, the method comprising:
forming a heterojunction bipolar transistor comprising a GeSn active region, forming an emitter base junction comprising a first conduction band offset, and forming a base collector junction comprising a second conduction band offset;
wherein:
the first conduction band offset is less than 0.1 electron volts; and
the second conduction band offset is less than 0.1 electron volts.

### Claim 42

A transistor laser comprising:
a GeSn active region;
wherein:
the GeSn active region comprises a GeSn quantum dot.

### Claim 43 (depends on 42)

The transistor laser of claim 42, wherein:
the GeSn quantum dot comprises a Sn percentage of approximately 10% to 20% within the GeSn quantum dot.

### Claim 44

A transistor laser comprising:
a GeSn active region;
wherein:
the GeSn active region comprises a GeSn quantum well or a GeSn quantum dot; and
the GeSn quantum well or the GeSn quantum dot is located within a Ge barrier or a GaAs barrier.