# US 9,437,769 B2 · Four-junction quaternary compound solar cell and method thereof

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 9,437,769 B2
- Document ID: US9437769B2
- Status: Granted
- Kind: B2
- Application number: 14/374,006
- Filed: 2012-12-21
- Published: 2014-12-25
- Granted: 2016-09-06
- Earliest claimed: 2012-02-08
- Assignees: Xiamen Sanan Optoelectronics Technology Co., Ltd.
- Applicants: Xiamen Sanan Optoelectronics Technology Co., Ltd.
- Inventors: Jingfeng Bi; Guijiang Lin; Jianqing Liu; Weiping Xiong; Minghui Song; Liangjun Wang; Jie Ding; Zhidong Lin
- Web page: https://patentgrep.com/patent/US9437769B2

## CPC

- H10F 10/161: comprising multiple PN heterojunctions, e.g. tandem cells
- H10F 10/163: comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
- H10F 71/00: Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00)
- H10F 71/1272: {comprising at least three elements, e.g. GaAlAs or InGaAsP}
- H10F 77/1248: {having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP}
- H10F 77/42: directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
- Y02E 10/52: PV systems with concentrators
- Y02E 10/544: Solar cells from Group III-V materials
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

A four-junction quaternary compound solar cell and a method thereof are provided. Forming a first subcell (100) with a first band gap, a lattice constant matching with the substrate on an InP grown substrate, forming a second subcell (200) with a second band gap bigger than the first band gap, a lattice constant matching with the substrate on the first subcell, forming a graded buffer layer (600) with a third band gap bigger than the second band gap on the second subcell, forming a third subcell (300) with a fourth band gap bigger than the third band gap, a lattice constant smaller than the substrate on the graded buffer layer, forming a fourth subcell (400) with a fifth band gap bigger than the fourth band gap, a lattice constant matching with the third subcell on the third subcell, and then forming the required four-junction solar cell then by succeeding process including removing the grown substrate, bonding a support substrate, forming electrodes, evaporating an anti-reflect film and so on.

## Claims

### Claim 1

A four-junction quaternary compound solar cell, comprising:
an InP growth substrate;
a first subcell with a first band gap and a lattice constant matched with the substrate lattice that forms on the growth substrate;
a second subcell with a second band gap larger than the first band gap and a lattice constant matched with the substrate lattice that forms on the first subcell;
a graded buffer layer that forms on the second subcell with a third band gap larger than the second band gap; wherein the lattice constant is gradually reduced in the graded buffer layer formed on the second subcell as the concentration of a component in the graded buffer layer is gradually modified;
a third subcell formed on the graded buffer layer has a fourth band gap larger than the third band gap and a lattice constant less than the lattice constant of the substrate, the first subcell and the second subcell; and
a fourth subcell formed on the third subcell has a fifth band gap larger than the fourth band gap and a lattice constant matched with the lattice constant of the third subcell.

### Claim 2 (depends on 1)

The four-junction quaternary compound solar cell according to claim 1, characterized in that: the first subcell is composed of an InGaAs emitter region and a base; the second subcell is composed of a quaternary compound InGaAsP emitter region and a base; the graded buffer layer is InGaP; the third subcell is composed of a quaternary compound InAlGaAs emitter region and a base; and the fourth subcell is composed of a quaternary compound InAlAsP emitter region and a base.

### Claim 3 (depends on 1)

The four-junction quaternary compound solar cell according to claim 1, characterized in that: the first subcell has a band gap of 0.72-0.76 eV; the second subcell has a band gap of 1-1.1 eV; the third subcell has a band gap of 1.35-1.42 eV; and the fourth subcell has a band gap of 1.85-1.92 eV.

### Claim 4 (depends on 1)

The four-junction quaternary compound solar cell according to claim 1, wherein the graded buffer layer is InGaP, and the component is the ration of In; and
the lattice constant of the graded buffer layer is lattice matched with the growth substrate at a first side and lattice matched with the third subcell at a second side.

### Claim 5

A four-junction quaternary compound solar cell, comprising:
a supporting substrate;
a first subcell on the supporting substrate with a first band gap;
a second subcell with a second band gap on the first subcell, wherein the second subcell is composed of a quaternary compound InGaAsP emitter region and a base, the second band gap is larger than the first band gap, and a lattice constant of the second subcell is matched with a lattice constant of the first subcell;
a graded buffer layer with a third band gap on the second subcell; wherein the third band gap is larger than the second band gap, the lattice constant is gradually reduced in the graded buffer layer on the second subcell as the concentration of a component in the graded buffer layer is gradually modified;
a third subcell of a quaternary compound InAlGaAs emitter region and a base with a fourth band gap, on the graded buffer layer, wherein the fourth band gap is larger than the third band gap and a lattice constant of the third subcell is less than the lattice constant of the first and second subcells;
a fourth subcell composed a quaternary compound InAlAsP emitter region and a base with a fifth band gap, on the third subcell, wherein the fifth band gap is larger than the fourth band gap and a lattice constant of the fourth subcell is matched with the lattice constant of the third subcell.

### Claim 6 (depends on 5)

The four-junction quaternary compound solar cell according to claim 5, characterized in that: the first subcell is composed of an InGaAs emitter region and a base; the second subcell is composed of a quaternary compound InGaAsP emitter region and a base; the graded buffer layer is InGaP; the third subcell is composed of a quaternary compound InAlGaAs emitter region and a base; and the fourth subcell is composed of a quaternary compound InAlAsP emitter region and a base.

### Claim 7 (depends on 5)

The four-junction quaternary compound solar cell according to claim 5, wherein the graded buffer layer is InGaP, and the component is the ratio of In; and
the gradually reducing lattice constant of the graded buffer layer is lattice matched with the second subcell at a first side and lattice matched with the third subcell at a second side.

### Claim 8

A fabrication method of the four-junction quaternary compound solar cell, comprising the following steps:
providing an InP growth substrate;
forming a first subcell with a first band gap and a lattice constant matched with the substrate lattice on the growth substrate;
forming a second subcell with a second band gap larger than the first band gap and a lattice constant matched with the substrate lattice on the first subcell;
forming a graded buffer layer with a third band gap larger than the second band gap on the second subcell; and a concentration of a component in the graded buffer layer gradually changes;
forming a third subcell, on the graded buffer layer, wherein the fourth band gap is larger than the third band gap and a lattice constant of the third subcell is less than a lattice constant of the substrate; and
forming a fourth subcell with a fifth band gap, on the third subcell, wherein the fifth band gap is larger than the fourth band gap and a lattice constant of the fourth subcell is lattice matched with the third subcell.

### Claim 9 (depends on 8)

The fabrication method of the four-junction quaternary compound solar cell according to claim 8, characterized in that: the first subcell has a band gap of 0.62-0.76 eV; the second subcell has a band gap of 1-1.1 eV; the third subcell has a band gap of 1.35-1.42 eV; and the fourth subcell has a band gap of 1.85-1.92 eV.

### Claim 10 (depends on 8)

The fabrication method of the four-junction quaternary compound solar cell according to claim 8, characterized in that: the first subcell is composed of an InGaAs emitter region and a base; the second subcell is composed of a quaternary compound InGaAsP emitter region and a base; the graded buffer layer is InGaP; the third subcell is composed of a quaternary compound InAlGaAs emitter region and a base; and the fourth subcell is composed of a quaternary compound InAlAsP emitter region and a base.

### Claim 11 (depends on 8)

The fabrication method of the four-junction quaternary compound solar cell according to claim 8, characterized in that a lattice constant of the graded buffer layer is lattice matched with the growth substrate on a first side and is lattice matched with the third subcell on a second side.

### Claim 12 (depends on 8)

The fabrication method of the four-junction quaternary compound solar cell according to claim 8, characterized in that the fabrication method further comprises the following steps:
providing a temporary substrate to reversely bond the completed four-junction quaternary compound solar cell on the temporary substrate;
lifting off the InP growth substrate;
providing a supporting substrate to bond the four-junction quaternary compound solar cell; and
removing the temporary substrate to complete the process of the four-junction quaternary compound solar cell.