# US 9,437,761 B2 · Method of forming chalcopyrite light-absorbing layer

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- Number: US 9,437,761 B2
- Document ID: US9437761B2
- Status: Granted
- Kind: B2
- Application number: 14/780,048
- Filed: 2014-04-01
- Published: 2016-02-18
- Granted: 2016-09-06
- Earliest claimed: 2013-04-02
- Assignees: Korea Institute of Energy Research
- Applicants: Korea Institute of Energy Research
- Inventors: Young Joo Eo; Kyung Hoon Yoon; SeJin Ahn; Jihye Gwak; Jae Ho Yun; Ara Cho; Kee Shik Shin; SeoungKyu Ahn; Jun Sik Cho; Jin Su Yoo; Sang Hyun Park; Joo Hyung Park
- Web page: https://patentgrep.com/patent/US9437761B2

## CPC

- H10F 77/126: {comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]}
- H10F 19/30: comprising thin-film photovoltaic cells
- H10F 71/134: {Irradiation with electromagnetic or particle radiation}
- Y02E 10/541: CuInSe2 material PV cells
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

Disclosed is a method of forming a chalcopyrite light-absorbing layer for a solar cell, including: forming a thin film including a chalcopyrite compound precursor; and radiating light on the thin film, wherein the chalcopyrite compound precursor absorbs light energy and is thus crystallized. When forming the chalcopyrite light-absorbing layer, light, but not heat, is applied, thus preventing problems, including damage to a substrate due to heat and formation of MoSe2 due to heating of the Mo rear electrode. Furthermore, long-wavelength light, which deeply penetrates the thin film, is first radiated, and short-wavelength light, which shallowly penetrates the thin film, is subsequently radiated, thereby sequentially forming the chalcopyrite light-absorbing layer from the bottom of the thin film.

## Claims

### Claim 1

A method of forming a chalcopyrite light-absorbing layer for a solar cell, comprising:
forming a thin film including a chalcopyrite compound precursor on a Mo rear electrode; and
radiating light on the thin film,
wherein the chalcopyrite compound precursor absorbs light energy and is thus crystallized, and wherein in the radiating the light, two or more light rays having different wavelength ranges are sequentially radiated from a relatively long wavelength to a relatively short wavelength.

### Claim 2 (depends on 1)

The method of claim 1,
wherein the forming the thin film including a chalcopyrite compound precursor is performed by applying a solution or slurry including a chalcopyrite compound precursor in a non-vacuum.

### Claim 3 (depends on 1)

The method of claim 1, wherein the light rays have a wavelength in a range from infrared light to ultraviolet light.

### Claim 4 (depends on 1)

The method of claim 1, wherein the radiating the light is performed in a Se or H2Se gas atmosphere.

### Claim 5 (depends on 1)

The method of claim 1 wherein the method is free from applying heat.

### Claim 6

A method of forming a chalcopyrite light-absorbing layer for a solar cell, comprising:
forming a chalcopyrite precursor thin film on a Mo rear electrode; and
radiating light on the chalcopyrite precursor thin film,
wherein the chalcopyrite precursor thin film absorbs light energy and is thus crystallized, and wherein in the radiating the light, two or more light rays having different wavelength ranges are sequentially radiated from a relatively long wavelength to a relatively short wavelength.

### Claim 7 (depends on 6)

The method of claim 6,
wherein the forming the chalcopyrite precursor thin film is performed by using sputtering or co-evaporating elements for a chalcopyrite compound.

### Claim 8 (depends on 6)

The method of claim 6, wherein the light rays have a wavelength in a range from infrared light to ultraviolet light.

### Claim 9 (depends on 6)

The method of claim 6, wherein the radiating the light is performed in a Se or H2Se gas atmosphere.

### Claim 10 (depends on 6)

The method of claim 6 wherein the method is free from applying heat.