# US 9,437,758 B2 · Photoelectric conversion device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,437,758 B2 - Document ID: US9437758B2 - Status: Granted - Kind: B2 - Application number: 13/398,872 - Filed: 2012-02-17 - Published: 2012-08-23 - Granted: 2016-09-06 - Earliest claimed: 2011-02-21 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Shunpei Yamazaki; Fumito Isaka; Jiro Nishida - Inventors: Shunpei Yamazaki; Fumito Isaka; Jiro Nishida - Web page: https://patentgrep.com/patent/US9437758B2 ## CPC - H10F 77/703: {of the semiconductor bodies, e.g. textured active layers} - H10F 10/14: Photovoltaic cells having only PN homojunction potential barriers - H10F 77/122: comprising only Group IV materials - H10F 77/48: Back surface reflectors [BSR] - Y02E 10/52: PV systems with concentrators - Y02E 10/547: Monocrystalline silicon PV cells - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract A photoelectric conversion device in photoelectric conversion in a light-absorption region in a crystalline silicon substrate is efficiently performed is provided. In the photoelectric conversion device, a light-transmitting conductive film which has a high effect of passivation of defects on a silicon surface and improves the reflectance on a back electrode side is provided between the back electrode and the crystalline silicon substrate, The light-transmitting conductive film includes an organic compound and an inorganic compound. The organic compound includes 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine. The inorganic compound includes an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table. ## Claims ### Claim 1 A photoelectric conversion device comprising: a crystalline silicon substrate including a first surface and a second surface opposite to the first surface, wherein an impurity region is included in a first surface side of the crystalline silicon substrate; a first electrode over the impurity region; a light-transmitting conductive film in contact with the second surface of the crystalline silicon substrate; and a second electrode in contact with the light-transmitting conductive film, wherein the light-transmitting conductive film comprises an organic compound and an inorganic compound, wherein the organic compound is 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), wherein the inorganic compound is an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table, and wherein the light-transmitting conductive film is a reflection film. ### Claim 2 (depends on 1) The photoelectric conversion device according to claim 1, wherein the inorganic compound is selected from the group consisting of vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide. ### Claim 3 (depends on 1) The photoelectric conversion device according to claim 1, wherein a thickness of the light-transmitting conductive film is greater than or equal to 30 nm and less than or equal to 60 nm. ### Claim 4 (depends on 1) The photoelectric conversion device according to claim 1, wherein the first electrode is on a light-receiving side of the photoelectric conversion device. ### Claim 5 (depends on 1) The photoelectric conversion device according to claim 1, wherein the first surface of the crystalline silicon substrate includes a first unevenness, wherein the second surface of the crystalline silicon substrate includes a second unevenness, and wherein the first unevenness is finer than the second unevenness. ### Claim 6 A photoelectric conversion device comprising: a crystalline silicon substrate including a first surface and a second surface opposite to the first surface; a first semiconductor layer over the first surface of the crystalline silicon substrate; a second semiconductor layer over the first semiconductor layer; a first light-transmitting conductive film over the second semiconductor layer; a first electrode over the first light-transmitting conductive film; a third semiconductor layer in contact with the second surface of the crystalline silicon substrate; a fourth semiconductor layer in contact with the third semiconductor layer; a second light-transmitting conductive film in contact with the fourth semiconductor layer; and a second electrode in contact with the second light-transmitting conductive film, wherein the second light-transmitting conductive film comprises an organic compound and an inorganic compound, wherein the organic compound is 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), wherein the inorganic compound is an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table, and wherein the second light-transmitting conductive film is a reflection film. ### Claim 7 (depends on 6) The photoelectric conversion device according to claim 6, wherein the first semiconductor layer and the third semiconductor layer comprise i-type amorphous silicon. ### Claim 8 (depends on 6) The photoelectric conversion device according to claim 6, wherein the second semiconductor layer comprises a silicon semiconductor having a conductivity type opposite to a conductivity type of the crystalline silicon substrate, and wherein the fourth semiconductor layer comprises a silicon semiconductor having the same conductivity as the crystalline silicon substrate. ### Claim 9 (depends on 6) The photoelectric conversion device according to claim 6, wherein the inorganic compound is selected from the group consisting of vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide. ### Claim 10 (depends on 6) The photoelectric conversion device according to claim 6, wherein a thickness of the second light-transmitting conductive film is greater than or equal to 30 nm and less than or equal to 60 nm. ### Claim 11 (depends on 6) The photoelectric conversion device according to claim 6, wherein the first electrode is on a light-receiving side of the photoelectric conversion device. ### Claim 12 (depends on 6) The photoelectric conversion device according to claim 6, wherein the first surface of the crystalline silicon substrate includes a first unevenness, wherein the second surface of the crystalline silicon substrate includes a second unevenness, and wherein the first unevenness is finer than the second unevenness.