# US 9,437,756 B2 · Metallization of solar cells using metal foils

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- Number: US 9,437,756 B2
- Document ID: US9437756B2
- Status: Granted
- Kind: B2
- Application number: 14/040,047
- Filed: 2013-09-27
- Published: 2015-04-02
- Granted: 2016-09-06
- Earliest claimed: 2013-09-27
- Assignees: SunPower Corporation
- Applicants: Sunpower Corporation
- Inventors: Thomas Pass
- Web page: https://patentgrep.com/patent/US9437756B2

## CPC

- H10F 77/219: {Arrangements for electrodes of back-contact photovoltaic cells}
- H10F 10/146: {Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side}
- Y02E 10/547: Monocrystalline silicon PV cells
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

A solar cell structure includes P-type and N-type doped regions. A dielectric spacer is formed on a surface of the solar cell structure. A metal layer is formed on the dielectric spacer and on the surface of the solar cell structure that is exposed by the dielectric spacer. A metal foil is placed on the metal layer. A laser beam is used to weld the metal foil to the metal layer. A laser beam is also used to pattern the metal foil. The laser beam ablates portions of the metal foil and the metal layer that are over the dielectric spacer. The laser ablation of the metal foil cuts the metal foil into separate P-type and N-type metal fingers.

## Claims

### Claim 1

A method of fabricating a solar cell, the method comprising:
forming a dielectric spacer on a surface of a solar cell structure;
forming a metal layer on the dielectric spacer, an N-type doped region, and a P-type doped region, wherein the metal layer electrically connects the N-type doped region to the P-type doped region;
placing a metal foil on the metal layer; and
after placing the metal foil on the metal layer, patterning the metal foil, wherein patterning the metal foil includes removing portions of the metal foil and the metal layer that are over the dielectric spacer.

### Claim 2 (depends on 1)

The method of claim 1, wherein patterning the metal foil comprises directing a laser beam on the metal foil to ablate the metal foil.

### Claim 3 (depends on 2)

The method of claim 2, wherein the laser beam also ablates at least a portion of the dielectric spacer under the metal layer.

### Claim 4 (depends on 1)

The method of claim 1, further comprising:
welding the metal foil to the metal layer.

### Claim 5 (depends on 1)

The method of claim 1, further comprising:
welding the metal foil to the metal layer by directing a laser beam on the metal foil.

### Claim 6 (depends on 1)

The method of claim 1, wherein the metal layer is formed on the dielectric spacer by blanket deposition.

### Claim 7 (depends on 1)

The method of claim 1, wherein the metal foil is patterned into a P-type metal finger and an N-type metal finger, and the P-type metal finger is physically and electrically separate from the N-type metal finger.

### Claim 8 (depends on 1)

The method of claim 1, wherein the metal foil is placed on the metal layer of the solar cell structure and another metal layer of another solar cell structure.

### Claim 9 (depends on 8)

The method of claim 8, wherein patterning the metal foil includes leaving an electrical connection between metal fingers of the solar cell structure and the other solar cell structure.