# US 9,437,751 B2 · Non-volatile memory device including charge trapping layer and method for fabricating the same

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- Number: US 9,437,751 B2
- Document ID: US9437751B2
- Status: Granted
- Kind: B2
- Application number: 14/555,040
- Filed: 2014-11-26
- Published: 2015-06-25
- Granted: 2016-09-06
- Earliest claimed: 2013-12-19
- Assignees: SK Innovation Co., Ltd.
- Applicants: SK Innovation Co., Ltd.
- Inventors: Jun-Hyung Kim
- Web page: https://patentgrep.com/patent/US9437751B2

## CPC

- H10D 30/697: {having trapping at multiple separated sites, e.g. multi-particles trapping sites}
- H10B 43/30: characterised by the memory core region
- H10D 30/0411: {of FETs having floating gates}
- H10D 30/0413: {of FETs having charge-trapping gate insulators, e.g. MNOS transistors}
- H10D 30/6891: {characterised by the shapes, relative sizes or dispositions of the floating gate electrode}
- H10D 30/69: IGFETs having charge trapping gate insulators, e.g. MNOS transistors
- H10D 64/035: {comprising conductor-insulator-conductor-insulator-semiconductor structures}
- H10D 64/037: {comprising charge-trapping insulators}
- H10D 64/68: characterised by the insulator, e.g. by the gate insulator
- H10D 64/685: {being perpendicular to the channel plane}
- H10D 64/693: {the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/6342: {Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating}
- H10P 14/683: {carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A non-volatile memory device includes a charge trapping layer for trapping charges. The charge trapping layer includes a linker layer formed over a substrate and including linkers to be bonded to metal ions metallic nanoparticles formed out of the metal ions over the linker layer and a nitride filling gaps between the metallic nanoparticles.

## Claims

### Claim 1

A method for fabricating a non-volatile memory device, comprising:
forming a tunneling layer over a substrate; and
forming a charge trapping layer over the tunneling layer,
wherein the forming of the charge trapping layer comprises:
forming a linker layer, which includes linkers, over the tunneling layer;
forming metal ions over the linker layer;
forming metallic nanoparticles by growing from the metal ions; and
forming a nitride over the metallic nanoparticles,
wherein the metallic nanoparticles are formed through reduction and growth of the metal ions being formed over the linker layer prior to forming the metallic nanoparticles.

### Claim 2 (depends on 1)

The method of claim 1, wherein the forming of the metallic nanoparticles comprises:
applying energy to the metal ions.

### Claim 3 (depends on 2)

The method of claim 2, further comprising:
supplying an organic surfactant of one or more kinds, before or during the application of energy.

### Claim 4 (depends on 3)

The method of claim 3, further comprising:
removing the organic surfactant that remains on the metallic nanoparticles, before the forming of the nitride.

### Claim 5 (depends on 2)

The method of claim 2, wherein the energy is at least one selected from heat energy, chemical energy, light energy, vibration energy, ion beam energy, electron beam energy, and radiation energy.

### Claim 6 (depends on 1)

The method of claim 1, wherein the linker layer is formed by applying a linker solution to a surface of the substrate.

### Claim 7 (depends on 1)

The method of claim 1, wherein the linker layer is formed through an Atomic Layer Deposition (ALD) process using a gas containing the linkers.

### Claim 8 (depends on 1)

The method of claim 1, wherein the linker layer comprises a functional group selected from an amine group (—NH2), a carboxyl group (—COOH), and a thiol group (—SH).

### Claim 9 (depends on 1)

The method of claim 1, wherein the forming of the metal ions comprises:
applying a metal precursor to the linkers.

### Claim 10 (depends on 1)

The method of claim 1, wherein the forming of the metal ions comprises:
applying a metal precursor solution, in which a metal precursor is dissolved, to the linkers, or supplying a gas-phase metal precursor to the linkers.

### Claim 11

A method for fabricating a non-volatile memory device, comprising:
forming a tunneling layer over a substrate; and
forming a charge trapping layer over the tunneling layer,
wherein the forming of the charge trapping layer comprises:
forming dielectric particle supporters over the tunneling layer;
forming linkers over the dielectric particle supporters;
bonding metal ions to the linkers;
forming metallic nanoparticles by growing from the metal ions; and
forming a nitride over the metallic nanoparticles,
wherein the metallic nanoparticles are formed through reduction and growth of the metal ions being formed over the linkers prior to forming the metallic nanoparticles.

### Claim 12 (depends on 11)

The method of claim 11, wherein the forming of the dielectric particle supporters and the linkers comprises:
preparing a supporter material by mixing dielectric material particles and linkers to form a solution; and
coating the substrate with the supporter material or depositing the supporter material on the substrate.

### Claim 13 (depends on 11)

The method of claim 11, wherein the forming of the metallic nanoparticles comprises:
applying energy to the metal ions.

### Claim 14 (depends on 13)

The method of claim 13, further comprising:
supplying an organic surfactant of one or more kinds, before or during the application of energy.

### Claim 15 (depends on 14)

The method of claim 14, further comprising:
removing the organic surfactant that remains on the metallic nanoparticles, before the forming of the nitride.

### Claim 16 (depends on 13)

The method of claim 13, wherein the energy is at least one selected from heat energy, chemical energy, light energy, vibration energy, ion beam energy, electron beam energy, and radiation energy.

### Claim 17 (depends on 11)

The method of claim 11, wherein each of the linkers comprises a functional group selected from an amine group (—NH2), a carboxyl group (—COOH), and a thiol group (—SH) that is suitable for bonding to the metal ions.

### Claim 18 (depends on 11)

The method of claim 11, wherein the forming of the metal ions comprises:
applying a metal precursor to the linkers.

### Claim 19 (depends on 11)

The method of claim 11, wherein the forming of the metal ions comprises:
applying a metal precursor solution where a metal precursor is dissolved to the linkers, or supplying a gas-phase metal precursor the linkers.