# US 9,437,746 B2 · Thin film transistor substrate having metal oxide semiconductor and method for manufacturing the same

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- Number: US 9,437,746 B2
- Document ID: US9437746B2
- Status: Granted
- Kind: B2
- Application number: 14/562,540
- Filed: 2014-12-05
- Published: 2015-04-02
- Granted: 2016-09-06
- Earliest claimed: 2012-06-26
- Assignees: LG Display Co., Ltd.
- Applicants: LG Display Co., Ltd.
- Inventors: Kisul Cho; Seongmoh Seo
- Web page: https://patentgrep.com/patent/US9437746B2

## CPC

- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- G02F 1/133514: {Colour filters}
- G02F 1/134336: {Matrix}
- G02F 1/134363: {for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]}
- G02F 1/136227: {Through-hole connection of the pixel electrode to the active element through an insulation layer}
- G02F 1/136286: {Wiring, e.g. gate line, drain line}
- G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)}
- H10D 30/031: {of thin-film transistors [TFT]}
- H10D 30/0312: {characterised by the gate electrodes}
- H10D 30/67: Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/60: wherein the TFTs are in active matrices
- H10W 20/425: {Barrier, adhesion or liner layers}
- H10W 20/4421: {the principal metal being copper}
- G02F 1/133519: {Overcoatings}
- G02F 1/134372: {for fringe field switching [FFS] where the common electrode is not patterned}
- G02F 1/136222: {Colour filters incorporated in the active matrix substrate}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The present disclosure relates to a thin film transistor substrate with a metal oxide semiconductor layer that has enhanced characteristics and stability. The present disclosure also relates to a method for manufacturing a thin film transistor substrate in which a thermal treatment is conducted for the metal oxide semiconductor layer and the damages to the substrate by the thermal treatment are minimized.

## Claims

### Claim 1

A thin film transistor substrate, comprising:
a gate electrode formed on a substrate;
a gate insulating layer covering first portions of the gate electrode and exposing second portions of the gate electrode;
a flat semiconductor active layer overlapping with the first portions of the gate electrode on the gate insulating layer;
a passivation layer directly contacting the flat semiconductor active layer;
a gate line contacting the second portions of the gate electrode and running in a horizontal direction on the substrate;
an intermediate insulating layer exposing middle portions of the flat semiconductor active layer and covering the gate line and the gate electrode;
a data line running in a vertical direction on the substrate on the intermediate insulating layer;
a source electrode branching from the data line and contacting a side of the flat semiconductor active layer; and
a drain electrode facing the source electrode, separated by a predetermined distance from the source electrode, and contacting another side of the flat semiconductor active layer.

### Claim 2 (depends on 1)

The thin film transistor substrate according to claim 1, further comprising:
a pixel contact hole exposing portions of the drain electrode by penetrating the passivation layer; and
a pixel electrode contacting the drain electrode through the pixel contact hole.

### Claim 3 (depends on 2)

The thin film transistor substrate according to claim 2, further comprising:
a color filter layer disposed on the passivation layer and under the pixel electrode; and
an overcoat layer disposed under the pixel electrode and covering the color filter layer.

### Claim 4 (depends on 3)

The thin film transistor substrate according to claim 3, wherein the color filter layer is filled with the inside area of a pixel area surrounded by the gate line and the data line, and is covering areas corresponding to the thin film transistor including the flat semiconductor active layer.

### Claim 5 (depends on 1)

The thin film transistor substrate according to claim 1, wherein the gate line includes a copper material.

### Claim 6 (depends on 1)

The thin film transistor substrate according to claim 1, wherein the data line includes a low resistance layer having copper and a protective layer having molybdenum.

### Claim 7 (depends on 1)

The thin film transistor substrate according to claim 1, wherein the passivation layer covers the source electrode and the drain electrode.