# US 9,437,741 B2 · Semiconductor device

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- Number: US 9,437,741 B2
- Document ID: US9437741B2
- Status: Granted
- Kind: B2
- Application number: 14/272,759
- Filed: 2014-05-08
- Published: 2014-11-20
- Granted: 2016-09-06
- Earliest claimed: 2013-05-16
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Shunpei Yamazaki; Hiroyuki Miyake; Kenichi Okazaki; Masahiko Hayakawa; Shinpei Matsuda
- Web page: https://patentgrep.com/patent/US9437741B2

## CPC

- H10D 30/6704: {having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device}
- H10D 30/6739: {Conductor-insulator-semiconductor electrodes}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device including a transistor having excellent electrical characteristics is provided. Alternatively, a semiconductor device having a high aperture ratio and including a capacitor capable of increasing capacitance is provided. The semiconductor device includes a gate electrode, an oxide semiconductor film overlapping the gate electrode, an oxide insulating film in contact with the oxide semiconductor film, a first oxygen barrier film between the gate electrode and the oxide semiconductor film, and a second oxygen barrier film in contact with the first oxygen barrier film. The oxide semiconductor film and the oxide insulating film are provided on an inner side of the first oxygen barrier film and the second oxygen barrier film.

## Claims

### Claim 1

A semiconductor device comprising:
a first insulating film over a substrate;
a first oxide insulating film over the first insulating film;
an oxide semiconductor film including a channel formation region over and in contact with the first oxide insulating film;
a second oxide insulating film over and in contact with the oxide semiconductor film; and
a second insulating film over the second oxide insulating film,
wherein the first insulating film and the second insulating film are in physical contact with each other, and
wherein the oxide semiconductor film, the second oxide insulating film, and a part of the first oxide insulating film are provided on an inner side of the first insulating film and the second insulating film.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a first gate electrode between the substrate and the first insulating film; and
a second gate electrode over the second insulating film,
wherein the first gate electrode and the second gate electrode are in contact with each other in an opening in the first insulating film and the second insulating film.

### Claim 3 (depends on 2)

The semiconductor device according to claim 2, wherein a side surface of the oxide semiconductor film faces the second gate electrode with the second oxide insulating film and the second insulating film provided therebetween.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein each of the first insulating film and the second insulating film is one selected from a silicon nitride film, a silicon nitride oxide film, an aluminum nitride film, an aluminum nitride oxide film, an aluminum oxide film, an aluminum oxynitride film, a gallium oxide film, a gallium oxynitride film, an yttrium oxide film, an yttrium oxynitride film, a hafnium oxide film, and a hafnium oxynitride film.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1,
wherein the second oxide insulating film includes an oxide film containing more oxygen than that in a stoichiometric composition,
wherein a released amount of oxygen atoms from the oxide film in thermal desorption spectroscopy analysis is greater than or equal to 1.0×1018 atoms/cm3, and
wherein a surface temperature of the oxide film in the thermal desorption spectroscopy is higher than or equal to 100° C. and lower than or equal to 700° C.

### Claim 6

A semiconductor device comprising:
a transistor comprising:
a first insulating film over a substrate;
a first oxide insulating film over the first insulating film;
an oxide semiconductor film over and in contact with the first oxide insulating film;
source and drain electrodes in contact with the oxide semiconductor film;
a second oxide insulating film over and in contact with the oxide semiconductor film; and
a second insulating film over the second oxide insulating film;
a pixel electrode over the second insulating film; and
a capacitor comprising;
a film having conductivity over the first oxide insulating film;
the second insulating film over and in contact with the film having conductivity; and
the pixel electrode,
wherein the first insulating film and the second insulating film are in physical contact with each other, and
wherein the pixel electrode is in contact with one of the source and drain electrodes in an opening in the second insulating film.

### Claim 7 (depends on 6)

The semiconductor device according to claim 6,
wherein the film having conductivity is a metal oxide film including a metal element contained in the oxide semiconductor film and an impurity.

### Claim 8 (depends on 7)

The semiconductor device according to claim 7, wherein the impurity is hydrogen.

### Claim 9 (depends on 6)

The semiconductor device according to claim 6, further comprising a gate electrode over the second insulating film,
wherein the gate electrode and the pixel electrode include a same material.

### Claim 10 (depends on 9)

The semiconductor device according to claim 9, wherein a side surface of the oxide semiconductor film faces the gate electrode with the second oxide insulating film and the second insulating film provided therebetween.

### Claim 11 (depends on 6)

The semiconductor device according to claim 6, wherein each of the first insulating film and the second insulating film is one selected from a silicon nitride film, a silicon nitride oxide film, an aluminum nitride film, an aluminum nitride oxide film, an aluminum oxide film, an aluminum oxynitride film, a gallium oxide film, a gallium oxynitride film, an yttrium oxide film, an yttrium oxynitride film, a hafnium oxide film, and a hafnium oxynitride film.

### Claim 12 (depends on 6)

The semiconductor device according to claim 6,
wherein the second oxide insulating film includes an oxide film containing more oxygen than that in a stoichiometric composition,
wherein a released amount of oxygen atoms from the oxide film in thermal desorption spectroscopy analysis is greater than or equal to 1.0×1018 atoms/cm3, and
wherein a surface temperature of the oxide film in the thermal desorption spectroscopy is higher than or equal to 100° C. and lower than or equal to 700° C.

### Claim 13

A semiconductor device comprising:
a transistor comprising:
a first gate electrode over a substrate;
a first insulating film over the first gate electrode;
a first oxide insulating film over the first insulating film;
an oxide semiconductor film over and in contact with the first oxide insulating film;
source and drain electrodes in contact with the oxide semiconductor film;
a second oxide insulating film over and in contact with the oxide semiconductor film;
a second insulating film over the second oxide insulating film; and
a second gate electrode over the second insulating film;
a pixel electrode over the second insulating film; and
a capacitor comprising;
a film having conductivity over the first oxide insulating film;
the second insulating film over and in contact with the film having conductivity; and
the pixel electrode,
wherein the first insulating film and the second insulating film are in physical contact with each other,
wherein the first gate electrode and the second gate electrode overlap each other with the oxide semiconductor film provided therebetween, and
wherein the pixel electrode is in contact with one of the source and drain electrodes in a first opening in the second insulating film.

### Claim 14 (depends on 13)

The semiconductor device according to claim 13, wherein the first gate electrode and the second gate electrode are in contact with each other in a second opening in the first insulating film and the second insulating film.

### Claim 15 (depends on 13)

The semiconductor device according to claim 13,
wherein the film having conductivity is a metal oxide film including a metal element contained in the oxide semiconductor film and an impurity.

### Claim 16 (depends on 15)

The semiconductor device according to claim 15, wherein the impurity is hydrogen.

### Claim 17 (depends on 13)

The semiconductor device according to claim 13, wherein the second gate electrode and the pixel electrode include a same material.

### Claim 18 (depends on 13)

The semiconductor device according to claim 13, wherein a side surface of the oxide semiconductor film faces the second gate electrode with the second oxide insulating film and the second insulating film provided therebetween.

### Claim 19 (depends on 13)

The semiconductor device according to claim 13, wherein each of the first insulating film and the second insulating film is one selected from a silicon nitride film, a silicon nitride oxide film, an aluminum nitride film, an aluminum nitride oxide film, an aluminum oxide film, an aluminum oxynitride film, a gallium oxide film, a gallium oxynitride film, an yttrium oxide film, an yttrium oxynitride film, a hafnium oxide film, and a hafnium oxynitride film.

### Claim 20 (depends on 13)

The semiconductor device according to claim 13,
wherein the second oxide insulating film includes an oxide film containing more oxygen than that in a stoichiometric composition,
wherein a released amount of oxygen atoms from the oxide film in thermal desorption spectroscopy analysis is greater than or equal to 1.0×1018 atoms/cm3, and
wherein a surface temperature of the oxide film in the thermal desorption spectroscopy is higher than or equal to 100° C. and lower than or equal to 700° C.