# US 9,437,740 B2 · Epitaxially forming a set of fins in a semiconductor device

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- Number: US 9,437,740 B2
- Document ID: US9437740B2
- Status: Granted
- Kind: B2
- Application number: 14/686,228
- Filed: 2015-04-14
- Published: 2015-08-06
- Granted: 2016-09-06
- Earliest claimed: 2013-08-01
- Assignees: Globalfoundries Inc.
- Applicants: GLOBALFOUNDRIES Inc.
- Inventors: Johannes M. van Meer; Michael J. Hargrove; Christian Gruensfelder; Yanxiang Liu; Srikanth B. Samavedam
- Web page: https://patentgrep.com/patent/US9437740B2

## CPC

- H10D 30/6217: {having non-uniform gate electrodes, e.g. gate conductors having varying doping}
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 30/6215: {having multiple independently-addressable gate electrodes}
- H10D 62/8325: {Silicon carbide}
- H10D 84/0167: {Manufacturing their channels}
- H10D 84/0193: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10P 14/27: {using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Approaches for enabling epitaxial growth of silicon fins in a device (e.g., a fin field effect transistor device (FinFET)) are provided. Specifically, approaches are provided for forming a set of silicon fins for a FinFET device, the FinFET device comprising: a set of gate structures formed over a substrate, each of the set of gate structures including a capping layer and a set of spacers; an oxide fill formed over the set of gate structures; a set of openings formed in the device by removing the capping layer and the set of spacers from one or more of the set of gate structures; a silicon material epitaxially grown within the set of openings in the device and then planarized; and wherein the oxide fill is etched to expose the silicon material and form the set of fins.

## Claims

### Claim 1

A FinFET device, comprising:
a substrate;
a set of gate structures disposed over the substrate and extending in a first direction;
a set of oxide fill regions disposed over the substrate and extending in the first direction;
a set of epitaxial silicon material regions disposed over the substrate;
wherein each epitaxial silicon material region is adjacent to and is disposed between, in a second direction perpendicular to the first direction, a gate structure and an oxide fill region, and wherein each epitaxial silicon material region extends vertically above all the gate structures and all the oxide fill regions.

### Claim 2 (depends on 1)

The FinFET device of claim 1, further comprising a set of well implants disposed in the substrate, wherein each well implant is disposed under an epitaxial silicon material region.

### Claim 3 (depends on 2)

The FinFET device of claim 2, wherein the FinFET device comprises a p-channel field-effect transistor (PFET) region, and the well implants in the PFET region comprise boron.

### Claim 4 (depends on 2)

The FinFET device of claim 2, wherein the FinFET device comprises an n-channel field-effect transistor (NFET) region, and the well implants in the NFET region comprise at least one of arsenic, antimony, or phosphorous.

### Claim 5 (depends on 2)

The FinFET device of claim 2, further comprising a set of diffusion barriers, wherein each diffusion barrier is disposed under an epitaxial silicon material region and above a well implant.

### Claim 6 (depends on 1)

The FinFET device of claim 1, wherein the FinFET device comprises a PFET region, and the epitaxial silicon material regions in the PFET region comprise at least one of silicon or silicon-carbon.

### Claim 7 (depends on 1)

The FinFET device of claim 1, wherein the FinFET device comprises an NFET region, and the epitaxial silicon material regions in the NFET region comprise at least one of silicon or silicon-germanium.