# US 9,437,728 B2 · Semiconductor device

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- Number: US 9,437,728 B2
- Document ID: US9437728B2
- Status: Granted
- Kind: B2
- Application number: 14/882,111
- Filed: 2015-10-13
- Published: 2016-02-11
- Granted: 2016-09-06
- Earliest claimed: 2011-01-26
- Assignees: Kabushiki Kaisha Toshiba
- Applicants: Kabushiki Kaisha Toshiba
- Inventors: Wataru Saito; Syotaro Ono; Toshiyuki Naka; Shunji Taniuchi; Miho Watanabe; Hiroaki Yamashita
- Web page: https://patentgrep.com/patent/US9437728B2

## CPC

- H10D 30/665: {having edge termination structures}
- H10D 12/441: {Vertical IGBTs}
- H10D 30/662: {having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region}
- H10D 62/111: {Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures}
- H10D 62/154: {Dispositions}
- H10D 62/158: {Dispositions}
- H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)}
- H10D 64/512: {Disposition of the gate electrodes, e.g. buried gates}
- H10D 64/517: {characterised by the conducting layers}
- H10D 64/519: {characterised by their top-view geometrical layouts}
- H10D 84/141: {VDMOS having built-in components}
- H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions}
- H10D 62/157: {Impurity concentrations or distributions}
- H10D 64/516: {the thicknesses being non-uniform}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A first semiconductor device of an embodiment includes a first semiconductor layer of a first conductivity type, a first control electrode, an extraction electrode, a second control electrode, and a third control electrode. The first control electrode faces a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of a first conductivity type, via a first insulating film. The second control electrode and the third control electrode are electrically connected to the extraction electrode, and face the second semiconductor layer under the extraction electrode, via the second insulating film. At least a part of the second control electrode and the whole of the third control electrode are provided under the extraction electrode. The electrical resistance of the second control electrode is higher than the electrical resistance of the third control electrode.

## Claims

### Claim 1

A semiconductor device comprising:
a semiconductor substrate of first conductivity type having a first face and a second face;
a first electrode provided on a side of the first face;
a first semiconductor layer of second conductivity type provided on a side of the second face of the semiconductor substrate;
a second semiconductor layer of first conductivity type selectively provided on the first semiconductor layer;
an insulating film provided on the second face;
a gate pad provided above the insulating film;
a first gate electrode provided on the first semiconductor layer and the second semiconductor layer via the insulating film, the first gate electrode being electrically connected to the gate pad;
a second gate electrode provided under the gate pad and electrically connected to the gate pad through the first gate electrode; and
a second electrode electrically connected to the first semiconductor layer and the second semiconductor layer.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a third gate electrode provided on the insulating film and electrically connecting the first gate electrode and the second gate electrode.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein
the gate pad completely covers the second gate electrode.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein
the gate pad includes a portion directly connected to the first gate electrode by a contact layer.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein the gate pad is an extraction pad.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a contact layer electrically connecting the gate pad to the first gate electrode.

### Claim 7 (depends on 6)

The semiconductor device according to claim 6, wherein the second gate electrode comprises a first portion and a second portion connected to the first portion, the first portion being substantially narrower in width in a plane parallel to the semiconductor substrate than the second portion, the second portion being electrically connected to the contact layer through the first portion.

### Claim 8 (depends on 1)

The semiconductor device according to claim 1, wherein the second gate electrode comprises a first portion and second portion connected to the first portion, the first portion being substantially narrower in width in a plane parallel to the semiconductor substrate than the second portion, the second portion being electrically connected to the first gate electrode through the first portion.

### Claim 9 (depends on 1)

The semiconductor device according to claim 1, wherein the second gate electrode comprises a first portion and a second portion connected to the first portion, the first portion being substantially narrower in width in a plane parallel to the semiconductor substrate than the second portion, and the only electrical connection between the gate pad and the second portion is through the first portion.

### Claim 10 (depends on 1)

The semiconductor device according to claim 1, wherein the second electrode comprises a plurality of first portions and a plurality of second portions, the first portions being substantially narrower in width in a plane parallel to the semiconductor substrate than the second portions, and any electrical connection between the gate pad and any one of the second portions in the plurality of second portions is through at least one first portion in the plurality of first portions.