# US 9,437,703 B2 · Non-volatile memory device including nano floating gate with nanoparticle and method for fabricating the same

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- Number: US 9,437,703 B2
- Document ID: US9437703B2
- Status: Granted
- Kind: B2
- Application number: 14/554,937
- Filed: 2014-11-26
- Published: 2015-06-25
- Granted: 2016-09-06
- Earliest claimed: 2013-12-19
- Assignees: SK Innovation Co., Ltd.
- Applicants: SK Innovation Co., Ltd.
- Inventors: Jun-Hyung Kim
- Web page: https://patentgrep.com/patent/US9437703B2

## CPC

- H10D 30/6893: {wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate}
- H10B 41/30: characterised by the memory core region
- H10D 30/0411: {of FETs having floating gates}
- H10D 30/683: {programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling}
- H10D 64/035: {comprising conductor-insulator-conductor-insulator-semiconductor structures}
- H10D 64/667: {the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers (having lateral variation H10D64/671)}
- H10D 64/693: {the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials}
- H10K 10/474: {the gate dielectric comprising a multilayered structure}
- H10K 10/476: {comprising at least one organic layer and at least one inorganic layer}
- H10K 10/478: {the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix}
- H10K 10/481: {characterised by the gate conductors}
- H10K 10/50: Bistable switching devices
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A non-volatile memory device includes a floating gate for charging and discharging of charges over a substrate. The floating gate comprises a linker layer formed over the substrate and including linkers to be bonded to metal ions and metallic nanoparticles formed out of the metal ions over the linker layer.

## Claims

### Claim 1

A method for fabricating a non-volatile memory device, comprising:
forming a tunneling insulation layer over a substrate; and
forming a floating gate for charging and discharging of charges over the tunneling insulation layer,
wherein the forming of the floating gate comprises:
forming a linker layer including linkers over the tunneling insulation layer;
forming metal ions over the linker layer; and
forming metallic nanoparticles by growing from the metal ions,
wherein the metallic nanoparticles are formed through reduction and growth of the metal ions being formed over the linker layer over the tunneling insulation layer prior to forming the metallic nanoparticles.

### Claim 2 (depends on 1)

The method of claim 1, wherein the forming of the metallic nanoparticles comprises:
applying energy to the metal ions.

### Claim 3 (depends on 2)

The method of claim 2, wherein the energy includes at least one selected from heat energy, chemical energy, light energy, vibration energy, ion beam energy, electron beam energy, and radiation energy.

### Claim 4 (depends on 1)

The method of claim 1, further comprising:
supplying an organic surfactant of one or more kinds before or during the application of energy.

### Claim 5 (depends on 1)

The method of claim 1, further comprising:
supplying at least one of an inorganic oxide and a dielectric organic material to a structure that includes the metallic nanoparticles.

### Claim 6 (depends on 1)

The method of claim 1, wherein the linker layer is formed by applying a linker solution to a surface of the substrate.

### Claim 7 (depends on 1)

The method of claim 1, wherein the linker layer is formed through an Atomic Layer Deposition (ALD) process using a gas containing the linkers.

### Claim 8 (depends on 1)

The method of claim 1, wherein the linker layer comprises a functional group selected from an amine group (—NH2), a carboxyl group (—COOH), and a thiol group (—SH).

### Claim 9 (depends on 1)

The method of claim 1, wherein the forming of the metal ions comprises:
applying a metal precursor to a structure where the linkers are bonded.

### Claim 10 (depends on 1)

The method of claim 1, wherein the forming of the metal ions comprises:
applying a metal precursor solution in which the metal precursor is dissolved to a structure where the linkers are bonded, or supplying a gas-phase metal precursor to the structure where the linkers are bonded.

### Claim 11

A method for fabricating a non-volatile memory device, comprising:
forming a tunneling insulation layer over a substrate; and
forming a floating gate, suitable for charging and discharging of charges, over the tunneling insulation layer,
wherein the forming of the floating gate comprises:
forming dielectric material particle supporters over the tunneling insulation layer;
forming a linker layer, including linkers, on a surface of the dielectric material particle supporters;
forming metal ions over the linker layer; and
forming metallic nanoparticles by growing from the metal ions,
wherein the metallic nanoparticles are formed through reduction and growth of the metal ions being formed over the linker layer over the tunneling insulation layer prior to forming the metallic nanoparticles.

### Claim 12 (depends on 11)

The method of claim 11, wherein the forming of the dielectric material particle supporters and the linker layer comprises:
preparing a supporter solution by mixing dielectric material particle supporters and linkers in a solvent; and
coating the substrate with the supporter solution or depositing the supporter solution on the substrate.

### Claim 13 (depends on 11)

The method of claim 11, wherein the forming the metallic nanoparticles comprises:
applying energy to the metal ions.

### Claim 14 (depends on 13)

The method of claim 13, further comprising:
supplying an organic surfactant of one or more kinds before or during the application of energy.

### Claim 15 (depends on 13)

The method of claim 13, wherein the energy is at least one selected from heat energy, chemical energy, light energy, vibration energy, ion beam energy, electron beam energy, and radiation energy.

### Claim 16 (depends on 11)

The method of claim 11, further comprising:
supplying at least one of an inorganic oxide and a dielectric organic material to a structure where the metallic nanoparticles are formed.

### Claim 17 (depends on 11)

The method of claim 11, wherein each of the linkers comprises a functional group selected from among an amine group (—NH2), a carboxyl group (—COOH), and a thiol group (—SH) that is suitable for bonding to the metal ions.

### Claim 18 (depends on 11)

The method of claim 11, wherein the forming of the metal ions comprises:
applying a metal precursor to a structure where the linkers are bonded.

### Claim 19 (depends on 11)

The method of claim 11, wherein the forming of the metal ions comprises:
applying a metal precursor solution, where metal precursors are dissolved, to a structure where the linkers are bonded, or supplying a gas-phase metal precursor to the structure where the linkers are bonded.