# US 9,437,700 B2 · Semiconductor device

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- Number: US 9,437,700 B2
- Document ID: US9437700B2
- Status: Granted
- Kind: B2
- Application number: 14/640,566
- Filed: 2015-03-06
- Published: 2015-10-01
- Granted: 2016-09-06
- Earliest claimed: 2014-03-26
- Assignees: Kabushiki Kaisha Toyota Chuo Kenkyusho; Toyota Jidosha Kabushiki Kaisha
- Applicants: Kabushiki Kaisha Toyota Chuo Kenkyusho; Toyota Jidosha Kabushiki Kaisha
- Inventors: Satoru Machida; Yusuke Yamashita; Koichi Nishikawa; Masaru Senoo; Jun Okawara; Yoshifumi Yasuda; Hiroshi Hosokawa; Yasuhiro Hirabayashi
- Web page: https://patentgrep.com/patent/US9437700B2

## CPC

- H10D 62/83: being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D 8/60: Schottky-barrier diodes
- H10D 12/481: {having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs}
- H10D 30/668: {having trench gate electrodes, e.g. UMOS transistors}
- H10D 64/513: {within recesses in the substrate, e.g. trench gates, groove gates or buried gates}
- H10D 64/62: Electrodes ohmically coupled to a semiconductor
- H10W 72/90: Bond pads, in general
- H10D 62/127: {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs}
- H10D 62/8325: {Silicon carbide}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device is provided with a silicon layer, an upper surface side aluminum layer containing silicon and an insulation film. The upper surface side aluminum layer contacts and is layered on a part of a surface of the silicon layer. The insulation film contacts and is layered on another part of the surface of the silicon layer. The insulation film is adjacent to and contacts the upper surface side aluminum layer. The insulation film includes an insulation film body and a plurality of first nodule segregated portions projecting from the insulation film body toward the upper surface side aluminum layer as seen along a vertical direction relative to the surface of the silicon layer. A corner is formed by a side surface of the insulation film body and a side surface of each of the first nodule segregated portions as seen along the vertical direction.

## Claims

### Claim 1

A semiconductor device comprising:
a semiconductor layer;
an aluminum layer containing silicon, the aluminum layer contacting and layered on a part of a surface of the semiconductor layer; and
an insulation film contacting and layered on another part of the surface of the semiconductor layer, the insulation film being adjacent to and contacting the aluminum layer;
wherein the insulation film is formed in a pattern to include an insulation film body and a plurality of first nodule segregated portions projecting from the insulation film body toward the aluminum layer as seen along a vertical direction relative to the surface of the semiconductor layer, and
a corner is formed by a side surface of the insulation film body and a side surface of each of the first nodule segregated portions as seen along the vertical direction.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein
each of the first nodule segregated portions includes a first convex portion projecting from the insulation film body and a second convex portion projecting from the first convex portion.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein
the insulation film body is disposed in a ring shape as seen along the vertical direction.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, further comprising
a trench gate extending inward from the surface of the semiconductor layer, wherein
a layout of the insulation film body and a layout of the trench gate match as seen along the vertical direction.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein
the insulation film further includes one or more second nodule segregated portions disposed apart from the insulation film body as seen along the vertical direction.

### Claim 6 (depends on 5)

The semiconductor device according to claim 5, wherein
a corner is formed on the one or more second nodule segregated portion as seen along the vertical direction.