# US 9,437,695 B2 · Semiconductor device and method of manufacturing the same

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- Number: US 9,437,695 B2
- Document ID: US9437695B2
- Status: Granted
- Kind: B2
- Application number: 15/018,491
- Filed: 2016-02-08
- Published: 2016-06-02
- Granted: 2016-09-06
- Earliest claimed: 2013-09-12
- Assignees: Kabushiki Kaisha Toshiba
- Applicants: Kabushiki Kaisha Toshiba
- Inventors: Masamune Takano
- Web page: https://patentgrep.com/patent/US9437695B2

## CPC

- H10D 64/231: {Emitter or collector electrodes for bipolar transistors}
- H10D 8/022: {of Zener diodes}
- H10D 8/024: {of Avalanche diodes}
- H10D 12/038: {having a recessed gate, e.g. trench-gate IGBTs}
- H10D 12/411: {Insulated-gate bipolar transistors [IGBT]}
- H10D 12/481: {having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs}
- H10D 62/142: {Anode regions of thyristors or collector regions of gated bipolar-mode devices}
- H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)}
- H10D 64/281: {Base electrodes for bipolar transistors}
- H10P 14/40: of conductive or resistive materials
- H10P 14/44: Physical vapour deposition [PVD]
- H10P 30/22: using masks
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

According to one embodiment, a semiconductor device includes a semiconductor substrate in which a recess is provided on a back surface thereof, and a shape of the recess is reflected on a surface of a metal film which is also provided on the back surface of the semiconductor substrate.

## Claims

### Claim 1

A semiconductor device comprising:
a semiconductor substrate having a recess extending from a surface of the semiconductor substrate in a depth direction to a recessed surface at a recessed depth, the recess being adjacent to an unrecessed portion of the semiconductor substrate, and the semiconductor substrate having a first semiconductor region of a first conductivity type; and
a metal film provided on the surface of the semiconductor substrate on the unrecessed portion and on the recessed surface, wherein,
a second semiconductor region of a second conductivity type is provided in the semiconductor substrate, and the second semiconductor region is contacting with the metal film on the recess.

### Claim 2 (depends on 1)

The device according to claim 1,
wherein the recess includes a recessed surface and sidewalls extending from the recessed surface to the surface of the semiconductor substrate.

### Claim 3 (depends on 2)

The device according to claim 2,
wherein the metal film is in contact with the recessed surface and sidewalls.

### Claim 4 (depends on 1)

The device of claim 1, further including an insulated gate bipolar transistor.