# US 9,437,642 B2 · Semiconductor device including a solid state imaging device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,437,642 B2 - Document ID: US9437642B2 - Status: Granted - Kind: B2 - Application number: 14/716,125 - Filed: 2015-05-19 - Published: 2015-12-10 - Granted: 2016-09-06 - Earliest claimed: 2014-06-05 - Assignees: Renesas Electronics Corporation - Applicants: Renesas Electronics Corporation - Inventors: Masatoshi Kimura - Web page: https://patentgrep.com/patent/US9437642B2 ## CPC - H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors - H04N 25/46: by combining or binning pixels - H04N 25/621: for the control of blooming - H04N 25/704: Pixels specially adapted for focusing, e.g. phase difference pixel sets - H10F 39/014: {of CMOS image sensors} - H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} - H10F 39/8027: {Geometry of the photosensitive area} - H10F 39/8037: {the integrated elements comprising a transistor} - H10F 39/80373: {characterised by the gate of the transistor} - H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION ## Abstract A semiconductor device is reduced in power consumption, the semiconductor device including a solid-state imaging device that includes pixels each having a plurality of light receiving elements. A pixel having first and second photodiodes is provided with a first transfer transistor that transfers charge in the first photodiode to a floating diffusion capacitance section, and a second transfer transistor that combines charge in the first photodiode and charge in the second photodiode, and transfers the combined charge to the floating diffusion capacitance section. Consequently, the semiconductor device is reduced in power required for activation of each transfer transistor in operation such as imaging with the solid-state imaging device. ## Claims ### Claim 1 A semiconductor device, comprising: a solid-state imaging device including a plurality of pixels, each of the plurality of pixels comprising: a first light receiving element and a second light receiving element that each generate charge corresponding to light quantity of incident light, a first transfer transistor that transfers charge in the first light receiving element to a floating diffusion capacitance section, and a second transfer transistor that combines the charge in the first light receiving element and charge in the second light receiving element, and transfers the combined charge to the floating diffusion capacitance section. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the first transfer transistor has a source including the first light receiving element and a drain including the floating diffusion capacitance section, and the second transfer transistor has a source including the first light receiving element and the second light receiving element and a drain including the floating diffusion capacitance section. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein in imaging operation using the solid-state imaging device, the charge in the first light receiving element and the charge in the second light receiving element are combined and acquired as one pixel data. ### Claim 4 (depends on 3) The semiconductor device according to claim 3, wherein in the imaging operation, the second transfer transistor is activated, thereby the charge in the first light receiving element and the charge in the second light receiving element are combined and read. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the pixel further includes an amplifier transistor that outputs an electric signal corresponding to fluctuations in potential of the floating diffusion capacitance section, a reset transistor that resets the potential of the floating diffusion capacitance section to a predetermined value, and a selection transistor that externally outputs the electric signal output by the amplifier transistor, wherein the reset transistor and the second transfer transistor are activated, thereby the charge in the first light receiving element and the charge in the second light receiving element are each initialized. ### Claim 6 (depends on 1) The semiconductor device according to claim 1, wherein a first gate electrode as a component of the first transfer transistor is provided neighboring the first light receiving element, and a second gate electrode as a component of the second transfer transistor is provided neighboring both the first light receiving element and the second light receiving element. ### Claim 7 (depends on 1) The semiconductor device according to claim 1, wherein part of the second gate electrode as the component of the second transfer transistor is arranged between the first light receiving element and the second light receiving element in a plan view. ### Claim 8 (depends on 7) The semiconductor device according to claim 7, wherein the first transfer transistor and the second transfer transistor are arranged in a first direction, and the second gate electrode between the first light receiving element and the second light receiving element extends in a second direction perpendicular to the first direction. ### Claim 9 (depends on 1) The semiconductor device according to claim 1, wherein the second transfer transistor separately receives the charge in the first light receiving element and the charge in the second light receiving element, combines the separately received charge in the first light receiving element and charge in the second light receiving element, and transfers the combined charge to the floating diffusion capacitance section.