# US 9,437,633 B2 · Depth sensing pixel, composite pixel image sensor and method of making the composite pixel image sensor

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- Number: US 9,437,633 B2
- Document ID: US9437633B2
- Status: Granted
- Kind: B2
- Application number: 14/534,892
- Filed: 2014-11-06
- Published: 2016-05-12
- Granted: 2016-09-06
- Earliest claimed: 2014-11-06
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Calvin Yi-Ping Chao; Kuo-Yu Chou; Chih-Min Liu
- Web page: https://patentgrep.com/patent/US9437633B2

## CPC

- G06T 7/50: Depth or shape recovery
- H04N 23/11: for generating image signals from visible and infrared light wavelengths
- H04N 23/54: Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
- H04N 23/90: Arrangement of cameras or camera modules, e.g. multiple cameras in TV studios or sports stadiums
- H04N 25/134: {based on three different wavelength filter elements}
- H04N 25/17: Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location
- H04N 25/705: Pixels for depth measurement, e.g. RGBZ
- H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N 25/771: comprising storage means other than floating diffusion
- H04N 25/79: Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
- H10F 39/014: {of CMOS image sensors}
- H10F 39/018: {of hybrid image sensors}
- H10F 39/12: Image sensors
- H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F 39/182: {Colour image sensors}
- H10F 39/184: {Infrared image sensors}
- H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes}
- H10F 39/8023: {Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery}
- H10F 39/8027: {Geometry of the photosensitive area}
- H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements}
- H10F 39/8037: {the integrated elements comprising a transistor}
- H10F 39/8053: {Colour filters}
- H10F 39/8063: {Microlenses}
- H10F 39/809: {of hybrid image sensors}
- H10F 39/811: {Interconnections}
- H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels}
- H04N 2209/045: using mosaic colour filter
- G06T: IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A depth sensing pixel includes a photodiode; a first photo storage device; and a first transistor configured to selectively couple the photodiode to the first photo storage device. The depth sensing pixel further includes a second photo storage diode different from the first photo storage device; and a second transistor configured to selectively couple the photodiode to the second photo storage device. The depth sensing pixel further includes a first transfer gate configured to selectively couple the first photo storage diode to a first output node. The depth sensing pixel further includes a second transfer gate configured to selectively couple the second photo storage diode to a second output node.

## Claims

### Claim 1

A depth sensing pixel comprising:
a photodiode;
a first photo storage device;
a first transistor configured to selectively couple the photodiode to the first photo storage device;
a second photo storage diode different from the first photo storage device;
a second transistor configured to selectively couple the photodiode to the second photo storage device;
a first transfer gate configured to selectively couple the first photo storage diode to a first output node; and
a second transfer gate configured to selectively couple the second photo storage diode to a second output node.

### Claim 2 (depends on 1)

The depth sensing pixel of claim 1, wherein the first output node is the second output node.

### Claim 3 (depends on 1)

The depth sensing pixel of claim 1, wherein the first output node is different from the second output node.

### Claim 4 (depends on 1)

The depth sensing pixel of claim 1, further comprising a readout circuit coupled to the first output node.

### Claim 5 (depends on 4)

The depth sensing pixel of claim 4, wherein the readout circuit comprises:
a reset transistor configured to set a voltage level of the first output node to a predetermined voltage;
a source follower, wherein a gate of the source follower is coupled to the first output voltage; and
a row select transistor coupled in series with the source follower.

### Claim 6

A composite pixel image sensor comprising:
an image sensing array configured to receive a first spectrum of an incident electromagnetic radiation;
a depth sensing pixel, wherein the depth sensing pixel comprises:
a depth sensing photodiode;
a first photo storage device;
a first transistor configured to selectively couple the depth sensing photodiode to the first photo storage device;
a second photo storage diode different from the first photo storage device;
a second transistor configured to selectively couple the depth sensing photodiode to the second photo storage device;
a first transfer gate configured to selectively couple the first photo storage diode to a first output node; and
a second transfer gate configured to selectively couple the second photo storage diode to a second output node; and
a bonding interface coupling the image sensing array to the depth sensing pixel.

### Claim 7 (depends on 6)

The composite pixel image sensor of claim 6, further comprising a first readout circuit coupled to the image sensing array.

### Claim 8 (depends on 7)

The composite pixel image sensor of claim 7, wherein at least a first portion of the first readout circuit is in the depth sensing pixel.

### Claim 9 (depends on 8)

The composite pixel image sensor of claim 8, wherein a second portion of the first readout circuit is in the image sensing array.

### Claim 10 (depends on 7)

The composite pixel image sensor of claim 7, further comprising a second readout circuit coupled to the depth sensing pixel.

### Claim 11 (depends on 10)

The composite pixel image sensor of claim 10, wherein the first readout circuit is electrically separated from the second readout circuit.

### Claim 12 (depends on 10)

The composite pixel image sensor of claim 10, further comprising a readout line coupled to the first readout circuit and the second readout circuit.

### Claim 13 (depends on 7)

The composite pixel image sensor of claim 7, further comprising a second image sensing array, wherein the second image sensing array comprises a second readout circuit, and the second readout circuit is coupled to the first readout circuit by a readout line.

### Claim 14 (depends on 6)

The composite pixel image sensor of claim 6, wherein the bonding interface comprises a hybrid bond.

### Claim 15 (depends on 6)

The composite pixel image sensor of claim 6, wherein the image sensing array comprises a color filter arranged in a Bayer filter pattern.

### Claim 16 (depends on 6)

The composite pixel image sensor of claim 6, wherein the first output node is the second output node.

### Claim 17 (depends on 6)

The composite pixel image sensor of claim 6, wherein the first output node is different from the second output node.

### Claim 18

A composite pixel image sensor comprising:
an image sensing array configured to receive a first spectrum of an incident electromagnetic radiation;
a depth sensing pixel bonded to the image sensing array, wherein the depth sensing pixel is configured to receive a second spectrum of the incident electromagnetic radiation, and the depth sensing pixel comprises:
a depth sensing photodiode;
a first photo storage device;
a first transistor configured to selectively couple the depth sensing photodiode to the first photo storage device;
a second photo storage diode different from the first photo storage device;
a second transistor configured to selectively couple the depth sensing photodiode to the second photo storage device;
a first transfer gate configured to selectively couple the first photo storage diode to a first output node; and
a second transfer gate configured to selectively couple the second photo storage diode to a second output node; and
a readout circuit configured to receive an output signal from the image sensing array and an output signal from the depth sensing pixel.

### Claim 19 (depends on 18)

The composite pixel image sensor of claim 18, wherein the first spectrum is a portion of a visible light spectrum, and the second spectrum is outside of the visible light spectrum.

### Claim 20 (depends on 18)

The composite pixel image sensor of claim 18, further comprising an interconnect structure configured to electrically connect the readout circuit to the depth sensing pixel, wherein the interconnect structure is between the image sensing array and the depth sensing pixel.