# US 9,437,623 B2 · Semiconductor device and method for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,437,623 B2 - Document ID: US9437623B2 - Status: Granted - Kind: B2 - Application number: 14/641,838 - Filed: 2015-03-09 - Published: 2015-06-25 - Granted: 2016-09-06 - Earliest claimed: 2005-12-26 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Kunio Hosoya - Web page: https://patentgrep.com/patent/US9437623B2 ## CPC - H10D 86/60: wherein the TFTs are in active matrices - G02F 1/1362: Active matrix addressed cells {(G02F1/134336, G02F1/134363 take precedence)} - G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} - H10D 86/441: {Interconnections, e.g. scanning lines} - H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors} - G02F 1/136227: {Through-hole connection of the pixel electrode to the active element through an insulation layer} - G02F 2201/50: Protective arrangements - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS ## Abstract It is an object to obtain a liquid crystal display device in which a contact defect is reduced, increase in contact resistance is suppressed, and an opening ratio is high. The present invention relates to a liquid crystal display device having a substrate; a thin film transistor provided over the substrate, which includes a gate wiring, a gate insulating film, an island-shaped semiconductor film, a source region, and a drain region; a source wiring which is provided over the substrate and is connected to the source region; a drain electrode which is provided over the substrate and is connected to the drain region; an auxiliary capacitor provided over the substrate; a pixel electrode connected to the drain electrode; and a protective film formed so as to cover the thin film transistor and the source wiring, where the protective film has an opening, and the auxiliary capacitor is formed in the area where the opening is formed. ## Claims ### Claim 1 A semiconductor device comprising: a first transistor; a second transistor; a first capacitor; a second capacitor; a first gate line; a second gate line; a source line; an auxiliary line; a first pixel electrode; and a second pixel electrode, wherein a gate of the first transistor is electrically connected to the first gate line, wherein one of a source and a drain of the first transistor is electrically connected to the source line, wherein the other of the source and the drain of the first transistor is electrically connected to the first pixel electrode, wherein a gate of the second transistor is electrically connected to the second gate line, wherein one of a source and a drain of the second transistor is electrically connected to the source line, wherein the other of the source and the drain of the second transistor is electrically connected to the second pixel electrode, wherein the first capacitor includes a part of the first pixel electrode and a part of the auxiliary line, wherein the second capacitor includes a part of the second pixel electrode and a part of the auxiliary line, and wherein a region between the first pixel electrode and the second pixel electrode has a region extending in a perpendicular direction to a direction in which the auxiliary line extends. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the auxiliary line extends in parallel with the first gate line and the second gate line. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein the semiconductor device is one of a television receiving set, a cellular phone, a liquid crystal display, a computer, a game machine, an image reproducing device, a video camera, a navigation system, an audio reproducing device, and a digital still camera. ### Claim 4 A semiconductor device comprising: a first transistor; a second transistor; a first capacitor; a second capacitor; a first gate line; a second gate line; a source line; an auxiliary line; a first pixel electrode; and a second pixel electrode, wherein the auxiliary line is between the first gate line and the second gate line, wherein a gate of the first transistor is electrically connected to the first gate line, wherein one of a source and a drain of the first transistor is electrically connected to the source line, wherein the other of the source and the drain of the first transistor is electrically connected to the first pixel electrode, wherein a gate of the second transistor is electrically connected to the second gate line, wherein one of a source and a drain of the second transistor is electrically connected to the source line, wherein the other of the source and the drain of the second transistor is electrically connected to the second pixel electrode, wherein the first capacitor includes a part of the first pixel electrode and a part of the auxiliary line, wherein the second capacitor includes a part of the second pixel electrode and a part of the auxiliary line, and wherein a region between the first pixel electrode and the second pixel electrode has a region extending in a perpendicular direction to a direction in which the auxiliary line extends. ### Claim 5 (depends on 4) The semiconductor device according to claim 4, wherein the auxiliary line extends in parallel with the first gate line and the second gate line. ### Claim 6 (depends on 4) The semiconductor device according to claim 4, wherein the semiconductor device is one of a television receiving set, a cellular phone, a liquid crystal display, a computer, a game machine, an image reproducing device, a video camera, a navigation system, an audio reproducing device, and a digital still camera.