# US 9,437,620 B2 · Semiconductor device and manufacturing method thereof

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- Number: US 9,437,620 B2
- Document ID: US9437620B2
- Status: Granted
- Kind: B2
- Application number: 14/718,701
- Filed: 2015-05-21
- Published: 2015-09-10
- Granted: 2016-09-06
- Earliest claimed: 2005-07-29
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Takuya Tsurume; Yoshitaka Dozen
- Web page: https://patentgrep.com/patent/US9437620B2

## CPC

- H10D 86/60: wherein the TFTs are in active matrices
- H10D 30/60: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)
- H10D 86/0214: {using temporary substrates}
- H10D 86/411: {characterised by materials, geometry or structure of the substrates}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/80: characterised by multiple passive components, e.g. resistors, capacitors or inductors
- H10P 52/00: Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10W 20/023: {the interconnections being through-semiconductor vias}
- H10D 30/6758: {characterised by the insulating substrates}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

It is an object of the present invention to provide a semiconductor device where, even in a case of stacking a plurality of semiconductor elements provided over a substrate, the stacked semiconductor elements can be electrically connected through the substrate, and a manufacturing method thereof. According to one feature of the present invention, a method for manufacturing a semiconductor device includes the steps of selectively forming a depression in an upper surface of a substrate or forming an opening which penetrates the upper surface through a back surface; forming an element group having a transistor so as to cover the upper surface of the substrate and the depression, or the opening; and exposing the element group formed in the depression or the opening by thinning the substrate from the back surface. A means for thinning the substrate can be performed by partially removing the substrate by performing grinding treatment, polishing treatment, etching by chemical treatment, or the like from the back surface of the substrate.

## Claims

### Claim 1

A semiconductor device comprising:
a substrate including a first opening, wherein a thickness of the substrate is 1 μm to 100 μm;
a first transistor over the substrate;
a first insulating film over the first transistor, the first insulating film including a second opening and a third opening;
a first conductive film over the first insulating film and in the first opening and the second opening, the first conductive film electrically connected to one of a source and a drain of the first transistor through the third opening; and
a second insulating film, covering the first transistor, between the first transistor and the first insulating film,
wherein the first opening and the second opening overlap with each other,
wherein the first conductive film penetrates an upper surface of the substrate through a back surface of the substrate, and
wherein the second insulating film faces a side surface of the substrate in the first opening.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a second conductive film over the first insulating film and in the third opening,
wherein the second conductive film is in contact with the first conductive film.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a second transistor under the substrate, the second transistor electrically connected to the first conductive film in the first opening.

### Claim 4 (depends on 3)

The semiconductor device according to claim 3, wherein the second transistor is electrically connected to the first conductive film through a conductive particle.

### Claim 5 (depends on 1)

A display device comprising:
the semiconductor device according to claim 1,
wherein a flexible substrate is used for a display portion of the display device.

### Claim 6 (depends on 1)

A display device comprising:
the semiconductor device according to claim 1,
wherein a display portion of the display device mounts along a curved wall.

### Claim 7

A semiconductor device comprising:
a substrate including a first opening, the substrate having flexibility;
a first transistor over the substrate;
a first insulating film over the first transistor, the first insulating film including a second opening and a third opening;
a first conductive film over the first insulating film and in the first opening and the second opening, the first conductive film electrically connected to one of a source and a drain of the first transistor through the third opening; and
a second insulating film, covering the first transistor, between the first transistor and the first insulating film,
wherein the first opening and the second opening overlap with each other,
wherein the first conductive film penetrates an upper surface of the substrate through a back surface of the substrate, and
wherein the second insulating film faces a side surface of the substrate in the first opening.

### Claim 8 (depends on 7)

The semiconductor device according to claim 7, further comprising:
a second conductive film over the first insulating film and in the third opening,
wherein the second conductive film is in contact with the first conductive film.

### Claim 9 (depends on 7)

The semiconductor device according to claim 7, further comprising:
a second transistor under the substrate, the second transistor electrically connected to the first conductive film in the first opening.

### Claim 10 (depends on 9)

The semiconductor device according to claim 9, wherein the second transistor is electrically connected to the first conductive film through a conductive particle.

### Claim 11 (depends on 7)

A display device comprising:
the semiconductor device according to claim 7.

### Claim 12 (depends on 7)

A display device comprising:
the semiconductor device according to claim 7,
wherein a display portion of the display device mounts along a curved wall.

### Claim 13

A semiconductor device comprising:
a substrate including a first opening;
a first transistor over the substrate;
a first insulating film over the first transistor, the first insulating film including a second opening and a third opening;
a first conductive film over the first insulating film and in the first opening and the second opening, the first conductive film electrically connected to one of a source and a drain of the first transistor through the third opening;
a flexible printed circuit (FPC) under the substrate, the FPC electrically connected to the first transistor through the first conductive film in the first opening; and
a second insulating film, covering the first transistor, between the first transistor and the first insulating film,
wherein the first opening and the second opening overlap with each other,
wherein the first conductive film penetrates an upper surface of the substrate through a back surface of the substrate, and
wherein the second insulating film faces a side surface of the substrate in the first opening.

### Claim 14 (depends on 13)

The semiconductor device according to claim 13, further comprising:
a second conductive film over the first insulating film and in the third opening,
wherein the second conductive film is in contact with the first conductive film.

### Claim 15 (depends on 13)

The semiconductor device according to claim 13, wherein the FPC is electrically connected to the first conductive film through a conductive particle.

### Claim 16 (depends on 13)

A display device comprising:
the semiconductor device according to claim 13,
wherein a flexible substrate is used for a display portion of the display device.

### Claim 17 (depends on 13)

A display device comprising:
the semiconductor device according to claim 13,
wherein a display portion of the display device mounts along a curved wall.