# US 9,437,601 B1 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,437,601 B1 - Document ID: US9437601B1 - Status: Granted - Kind: B1 - Application number: 14/848,946 - Filed: 2015-09-09 - Granted: 2016-09-06 - Earliest claimed: 2015-07-08 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Kabushiki Kaisha Toshiba - Inventors: Takeshi Sonehara - Web page: https://patentgrep.com/patent/US9437601B1 ## CPC - H10B 41/30: characterised by the memory core region - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 43/30: characterised by the memory core region - H10D 64/037: {comprising charge-trapping insulators} - H10D 64/662: {the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures} - H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels - H10D 64/035: {comprising conductor-insulator-conductor-insulator-semiconductor structures} - H10B: ELECTRONIC MEMORY DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A semiconductor device according to an embodiment includes a stacked body, and a semiconductor pillar. The stacked body includes first insulating layers and conductive layers. The conductive layer includes silicon. At least one of the conductive layers includes a first portion, a second portion, and a third portion. The first portion includes a first element selected from at least one of boron and phosphorus. The second portion includes the first element. The third portion is provided between the first portion and the second portion in a stacking direction of the conductive layers and the first insulating layers. The third portion includes a second element. The second element is selected from at least one of carbon, nitrogen, oxygen, and germanium. The semiconductor pillar pierces through the stacked body. The semiconductor pillar extends in the stacking direction. ## Claims ### Claim 1 A semiconductor device comprising: a stacked body including a plurality of first insulating layers and a plurality of conductive layers including silicon, the conductive layers and the first insulating layers being alternately provided, and at least one of the conductive layers including: a first portion including a first element selected from at least one of boron and phosphorus; a second portion including the first element; and a third portion provided between the first portion and the second portion in a stacking direction of the plurality of conductive layers and the plurality of first insulating layers and including a second element selected from at least one of carbon, nitrogen, oxygen, and germanium; and a semiconductor pillar piercing through the stacked body and extending in the stacking direction. ### Claim 2 (depends on 1) The device according to claim 1, further comprising a second insulating layer provided in contact with the conductive layer between the semiconductor pillar and the stacked body, wherein the third portion is in contact with the second insulating layer. ### Claim 3 (depends on 1) The device according to claim 1, further comprising a second insulating layer provided in contact with the conductive layer between the semiconductor pillar and the stacked body, wherein the first portion and the second portion are in contact with the second insulating layer. ### Claim 4 (depends on 1) The device according to claim 1, further comprising a second insulating layer provided in contact with the conductive layer between the semiconductor pillar and the stacked body, wherein the first portion, the second portion, and the third portion are in contact with the second insulating layer. ### Claim 5 (depends on 1) The device according to claim 1, wherein thickness in the stacking direction of the third portion is smaller than thickness in the stacking direction of the first portion and smaller than thickness in the stacking direction of the second portion. ### Claim 6 (depends on 1) The device according to claim 1, wherein the first element is boron. ### Claim 7 (depends on 1) The device according to claim 1, wherein the first portion and the second portion include the second element, and a maximum of concentration of the second element in the first portion and a maximum of concentration of the second element in the second portion are lower than a maximum of concentration of the second element in the third portion. ### Claim 8 (depends on 1) The device according to claim 1, wherein a maximum of concentration of the first element in the first portion is higher than a maximum of concentration of the second element in the third portion. ### Claim 9 (depends on 1) The device according to claim 1, wherein a ratio of the second element to the silicon in the third portion is not less than 0.1% and not more than 10%. ### Claim 10 (depends on 1) The device according to claim 1, wherein the third portion includes the first element, and a minimum of concentration of the first element in the third portion is higher than a maximum of concentration of the second element. ### Claim 11 (depends on 1) The device according to claim 1, wherein the third portion includes the first element, and a maximum of concentration of the second element in the third portion is higher than a minimum of concentration of the first element. ### Claim 12 (depends on 1) The device according to claim 1, wherein the third portion includes the first element, and a maximum of concentration of the first element in the third portion is lower than a maximum of concentration of the first element in the first portion. ### Claim 13 (depends on 1) The device according to claim 1, wherein the at least one conductive layer further includes: a fourth portion including the second element, the second portion being provided between the third portion and the fourth portion in the stacking direction; and a fifth portion including the first element, the fourth portion being provided between the second portion and the fifth portion in the stacking direction. ### Claim 14 (depends on 13) The device according to claim 13, wherein thickness in the stacking direction of the third portion is smaller than thickness in the stacking direction of the first portion, smaller than thickness in the stacking direction of the second portion, and smaller than thickness in the stacking direction of the fifth portion, and thickness in the stacking direction of the fourth portion is smaller than the thickness in the stacking direction of the first portion, smaller than the thickness in the stacking direction of the second portion, and smaller than the thickness in the stacking direction of the fifth portion.