# US 9,437,596 B2 · Semiconductor device and method for manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,437,596 B2 - Document ID: US9437596B2 - Status: Granted - Kind: B2 - Application number: 14/206,345 - Filed: 2014-03-12 - Published: 2014-10-02 - Granted: 2016-09-06 - Earliest claimed: 2013-03-28 - Assignees: Fujitsu Semiconductor Limited - Applicants: Fujitsu Semiconductor Limited - Inventors: Junichi Ariyoshi - Web page: https://patentgrep.com/patent/US9437596B2 ## CPC - H10D 84/859: {comprising both N-type and P-type wells, e.g. twin-tub} - H10D 84/0191: {Manufacturing their doped wells} - H10D 84/038: {using silicon technology, e.g. SiGe} - H10P 30/222: {characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221)} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device includes a substrate, a first well of a first conductivity type formed within the substrate, a second well of a second conductivity type formed underneath the first well within the substrate and a third well of the second conductivity type formed horizontally to the first well within the substrate, and including a first region formed to a first depth from a surface of the substrate, and a second region formed to a second depth greater than the first depth from the surface of the substrate and connected to the second well. ## Claims ### Claim 1 A semiconductor device comprising: a substrate; a first well of a first conductivity type formed within the substrate; a second well of a second conductivity type formed underneath the first well within the substrate; a third well of the second conductivity type formed horizontally to the first well within the substrate, and that includes a first region and a second region; an insulating film formed on the first region; and a silicide block layer formed above the first well and the third well, wherein the first region is located horizontally to the second region; a bottom of the second region is located deeper than a bottom of the first region; the second region is connected to the first well; and the insulating film covers over an upper portion of the first region and is not formed on the second region. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein an upper surface of the substrate continuous to an upper surface of the insulating film is positioned on the second region. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, comprising a fourth well of the first conductivity type formed adjacently to the first region within the substrate. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, comprising an impurity layer formed on an upper portion of a connecting part between the first well and the third well, wherein the silicide block layer is located on the impurity layer. ### Claim 5 A method for manufacturing a semiconductor device comprising: forming an insulating film on a substrate; forming a first well of a first conductivity type within the substrate; forming a second well of a second conductivity type underneath the first well within the substrate; forming a third well of the second conductivity type and that includes a first region and a second region, and that is located horizontally to the first well within the substrate; and forming a silicide block lay er above the first well and the third well, wherein the first region is located horizontally to the second region; a bottom of the second region is located deeper than a bottom of the first region; the second region is connected to the first well; and the insulating film covers over an upper portion of the first region and is not formed on the second region. ### Claim 6 (depends on 5) The method for manufacturing a semiconductor device according to claim 5, wherein an upper surface of the substrate continuous to an upper surface of the insulating film is positioned on the second region. ### Claim 7 (depends on 5) The method for manufacturing a semiconductor device according to claim 5, comprising forming a fourth well of the first conductivity type within the substrate, wherein the fourth well is formed adjacently to the first region within the substrate. ### Claim 8 (depends on 5) The method for manufacturing a semiconductor device according to claim 5, wherein the forming the third well is carried out by implanting impurities at a tilt angle at which channeling takes place. ### Claim 9 (depends on 5) The method for manufacturing a semiconductor device according to claim 5, comprising forming an impurity layer on an upper portion of a connecting part between the first well and the third well, wherein the silicide block layer is located on the impurity layer. ### Claim 10 (depends on 1) The semiconductor device according to claim 1, wherein a horizontal width of the bottom of the second region is smaller than a horizontal width of the third well. ### Claim 11 (depends on 5) The method for manufacturing a semiconductor device according to claim 5, wherein a horizontal width of the bottom of the second region is smaller than a horizontal width of the third well. ### Claim 12 (depends on 1) The semiconductor device according to claim 1, wherein the silicide block layer includes an insulating layer. ### Claim 13 (depends on 12) The semiconductor device according to claim 12, wherein the insulating layer includes a silicon oxide film. ### Claim 14 (depends on 1) The semiconductor device according to claim 1, wherein the silicide block layer covers up the impurity layer in plan view. ### Claim 15 (depends on 1) The semiconductor device according to claim 1, comprising gate electrodes formed on the first well and the third well; and sidewall insulating films formed on side surfaces of the gate electrodes, wherein the sidewall insulating films are formed of the same material as the silicide block layer. ### Claim 16 (depends on 5) The method for manufacturing a semiconductor device according to claim 5, wherein the silicide block layer includes an insulating layer. ### Claim 17 (depends on 16) The method for manufacturing a semiconductor device according to claim 16, wherein the insulating layer includes a silicon oxide film. ### Claim 18 (depends on 5) The method for manufacturing a semiconductor device according to claim 5, wherein the silicide block layer covers up the impurity layer in plan view. ### Claim 19 (depends on 5) The method for manufacturing a semiconductor device according to claim 5, comprising forming gate electrodes on the first well and the third well; and forming sidewall insulating films on side surfaces of the gate electrodes, wherein the sidewall insulating films are formed of the same material as the silicide block layer.