# US 9,437,595 B2 · Barrier trench structure and methods of manufacture

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- Number: US 9,437,595 B2
- Document ID: US9437595B2
- Status: Granted
- Kind: B2
- Application number: 14/686,972
- Filed: 2015-04-15
- Published: 2015-08-06
- Granted: 2016-09-06
- Earliest claimed: 2011-05-16
- Assignees: Globalfoundries Inc.
- Applicants: International Business Machines Corporation
- Inventors: Brent A. Anderson; Andres Bryant; Edward J. Nowak; Jed H. Rankin
- Web page: https://patentgrep.com/patent/US9437595B2

## CPC

- H10D 84/85: Complementary IGFETs, e.g. CMOS
- H10D 62/113: {Isolations within a component, i.e. internal isolations}
- H10D 84/0151: {Manufacturing their isolation regions}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 86/01: Manufacture or treatment
- H10D 86/201: {the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence)}
- H10P 90/1906: {Preparing SOI wafers}
- H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations}
- H10W 10/061: {using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations}
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A structure includes at least one shallow trench isolation structure formed in a substrate to isolate adjacent different type devices. The structure further includes a barrier trench structure formed in the substrate to isolate diffusions of adjacent same type devices. The structure further includes a material spanning the barrier trench structure to connect the diffusions of the adjacent same type device, on a same level as the adjacent same type devices.

## Claims

### Claim 1

A structure, comprising
a PFET having a source and a drain formed in a silicon layer of silicon-on-insulator substrate which comprises the silicon layer on a buried oxide layer;
a first NFET having a source and a drain formed in the silicon layer of the silicon-on-insulator substrate;
a second NFET having a source and a drain formed in the silicon layer of the silicon-on-insulator substrate;
a barrier trench structure lined with gate dielectric material and filled with gate polysilicon material which also forms the first NFET, the second NFET and the PFET, the barrier trench structure extending from a top surface of the silicon layer to the buried oxide layer, and physically isolates the source of the first NFET from the drain of the second NFET;
a strap material extending on a surface of the barrier trench structure on a same level of the first NFET and the second NFET and spanning the barrier trench structure to electrically connect the source of the first NFET to the drain of the second NFET; and
a shallow trench isolation structure in the silicon layer which electrically isolates the PFET and the first NFET,
wherein the gate dielectric material and gate polysilicon material form a gate electrode material of the first NFET and the second NFET.

### Claim 2 (depends on 1)

The structure of claim 1, wherein the strap material is an epitaxial silicon layer extending from a top surface of the source of the first NFET over the dielectric lined and polysilicon filled barrier trench structure to a top surface of the drain of the second NFET.

### Claim 3 (depends on 1)

The structure of claim 1, wherein the strap material is a metal silicide layer formed on a top surface of the source of the first NFET, on a top surface of the drain of the second NFET and on a top surface of the gate polysilicon material, the metal silicide extending over the gate dielectric material.

### Claim 4 (depends on 1)

The structure of claim 1, wherein the gate dielectric material is an oxide liner and is a same material as a gate dielectric layer of gates of the first and second NFETs and the gate polysilicon material is a same material as gate electrodes of the gates of the first and second NFETs.

### Claim 5 (depends on 1)

The structure of claim 1, wherein the source of the PFET is connected to a positive voltage supply, the drain of the PFET connected to an output of an inverter, the source of the first NFET is connected to the drain of the second NFET, the source of the second NFET is connected to ground, and gates of the PFET and the first and second NFETs connected to an input of the inverter.

### Claim 6 (depends on 1)

The structure of claim 1, wherein the barrier trench structure is structured to increase device immunity to radiation by blocking radiation events from passing between adjacent source/drain regions of the first NFET and the second NFET.

### Claim 7 (depends on 1)

The structure of claim 1, wherein the strap material is formed on the same level as the first NFET and the second NFET and electrically connects, in series, the first NFET and the second NFET.

### Claim 8 (depends on 1)

The structure of claim 1, wherein the strap material is epitaxially grown Si.

### Claim 9 (depends on 8)

The structure of claim 8, wherein the strap material has a thickness of about 32 nm or less.

### Claim 10 (depends on 1)

The structure of claim 1, wherein the strap material is a metal silicide.