# US 9,437,590 B2 · Electrostatic discharge protection device and electrostatic discharge protection system > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,437,590 B2 - Document ID: US9437590B2 - Status: Granted - Kind: B2 - Application number: 14/608,752 - Filed: 2015-01-29 - Published: 2016-08-04 - Granted: 2016-09-06 - Earliest claimed: 2015-01-29 - Assignees: Mediatek Inc. - Applicants: MediaTek Inc. - Inventors: Chang-Tzu Wang - Web page: https://patentgrep.com/patent/US9437590B2 ## CPC - H10D 89/713: {including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices} - H10D 18/251: {Lateral thyristors} - H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)} - H10D 62/40: Crystalline structures - H10D 62/83: being Group IV materials, e.g. B-doped Si or undoped Ge - H10D 89/60: Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] - H10D 89/811: {using FETs as protective elements} - H10W 42/60: protecting against electrostatic charges or discharges, e.g. Faraday shields (integrated devices comprising arrangements for electrical protection H10D89/60) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract An ESD device disposed on a substrate is provided. The ESD device includes a first well, a second well, a first poly-silicon region, a second poly-silicon region and a first protection layer. The first well has a first conductive type and is disposed on the substrate. The second well has a second conductive type, is disposed on the substrate and is adjacent to the first well. The first poly-silicon region is disposed on the first well. The second poly-silicon region is disposed on the second well. The first protection layer covers portions of the first well, the second well, the first poly-silicon region and the second poly-silicon region. There is no doping region in the portions of the first well and the second well which are covered by the first protection layer and between the first poly-silicon region and the second poly-silicon region. ## Claims ### Claim 1 An electrostatic discharge protection device disposed on a substrate, comprising: a first well, having a first conductive type and disposed on the substrate; a second well, having a second conductive type and disposed on the substrate, wherein the second well is adjacent to the first well, and the second conductive type is different from the first conductive type; a first poly-silicon region, disposed on the first well, wherein a first node connects to the first well through the first poly-silicon region; a second poly-silicon region, disposed on the second well, wherein a second node connects to the second well through the second poly-silicon region; and a first protection layer, disposed between the first poly-silicon region and the second poly-silicon region, wherein the first protection layer covers a portion of the first well, a portion of the second well, a portion of the first poly-silicon region and a portion of the second poly-silicon region, and there is no doping region in the portions of the first well and the second well which are covered by the first protection layer and between the first poly-silicon region and the second poly-silicon region. ### Claim 2 (depends on 1) The electrostatic discharge protection device as claimed in claim 1, further comprising: a first doping region, having a second conductive type and disposed in the first well, wherein the first doping region is not adjacent to the first poly-silicon region; a third node, connecting the first doping region; a second doping region, having a first conductive type and disposed in the second well, wherein the second doping region is not adjacent to the second poly-silicon region; and a fourth node, connecting the second doping region. ### Claim 3 (depends on 2) The electrostatic discharge protection device as claimed in claim 2, further comprising: a third doping region, having a first conductive type and disposed in the first well, wherein the third doping region is not adjacent to the first doping region; a fifth node, connecting the third doping region; a fourth doping region, having a second conductive type and disposed in the second well, wherein the fourth doping region is not adjacent to the second doping region; and a sixth node, connecting the fourth doping region. ### Claim 4 (depends on 3) The electrostatic discharge protection device as claimed in claim 3, further comprising: a second protection layer, disposed between the first doping region and the third doping region, wherein the second protection layer covers a portion of the first well, a portion of the first doping region and a portion of the third doping region; and a third protection layer, disposed between the second doping region and the fourth doping region, wherein the third protection layer covers a portion of the second well, a portion of the second doping region and a portion of the fourth doping region. ### Claim 5 (depends on 3) The electrostatic discharge protection device as claimed in claim 3, wherein the third node connects to an IO pad, the fifth node connects to a first voltage pad, the fourth node and the sixth node connect to a second voltage pad. ### Claim 6 (depends on 3) The electrostatic discharge protection device as claimed in claim 3, wherein the third node and the fifth node connect to a first voltage pad, the fourth node connects to an IO pad, and the sixth node connects to a second voltage pad. ### Claim 7 (depends on 1) The electrostatic discharge protection device as claimed in claim 1, wherein the portion of the first well covered by the first protection layer is equal to the portion of the second well covered by the first protection layer. ### Claim 8 (depends on 1) The electrostatic discharge protection device as claimed in claim 1, wherein the portion of the first well covered by the first protection layer is larger than or smaller than the portion of the second well covered by the first protection layer. ### Claim 9 An electrostatic discharge protection device disposed on a substrate, comprising: a first MOS transistor structure, comprising: a first well, having a first conductive type and disposed on the substrate; a second well, having a second conductive type and disposed on the substrate, wherein the second well is adjacent to the first well, and the second conductive type is different from the first conductive type; and a first doping region, having a second conductive type and disposed in the first well; a second MOS transistor structure, comprising: the first well; the second well; and a second doping region, having a first conductive type and disposed in the second well; a first poly-silicon region, disposed on the first well; a second poly-silicon region, disposed on the second well; and a first protection layer, disposed between the first poly-silicon region and the second poly-silicon region, wherein the first protection layer covers a portion of the first well, a portion of the second well, a portion of the first poly-silicon region and a portion of the second poly-silicon region, and there is no doping region in the portions of the first well and the second well which are covered by the first protection layer and between the first poly-silicon region and the second poly-silicon region. ### Claim 10 (depends on 9) The electrostatic discharge protection device as claimed in claim 9, further comprising: a first node, connected to the first well through the first poly-silicon region; a second node, connected to the second well through the second poly-silicon region; a third node, connected to the first doping region; and a fourth node, connected to the second doping region, wherein the first doping region is not adjacent to the first poly-silicon region, and the second doping region is not adjacent to the second poly-silicon region. ### Claim 11 (depends on 10) The electrostatic discharge protection device as claimed in claim 10, further comprising: a third doping region, having a first conductive type and disposed in the first well, wherein the third doping region is not adjacent to the first doping region; a fifth node, connected to the third doping region; a fourth doping region, having a second conductive type and disposed in the second well, wherein the fourth doping region is not adjacent to the second doping region; and a sixth node, connected to the fourth doping region. ### Claim 12 (depends on 11) The electrostatic discharge protection device as claimed in claim 11, further comprising: a second protection layer, disposed between the first doping region and the third doping region, wherein the second protection layer covers a portion of the first well, a portion of the first doping region and a portion of the third doping region; and a third protection layer, disposed between the second doping region and the fourth doping region, wherein the third protection layer covers a portion of the second well, a portion of the second doping region and a portion of the fourth doping region. ### Claim 13 (depends on 11) The electrostatic discharge protection device as claimed in claim 11, wherein the third node connects to an IO pad, the fifth node connects to a first voltage pad, the fourth node and the sixth node connect to a second voltage pad. ### Claim 14 (depends on 11) The electrostatic discharge protection device as claimed in claim 11, wherein the third node and the fifth node connect to a first voltage pad, the fourth node connects to an IO pad, and the sixth node connects to a second voltage pad. ### Claim 15 (depends on 9) The electrostatic discharge protection device as claimed in claim 9, wherein the portion of the first well covered by the first protection layer is equal to the portion of the second well covered by the first protection layer. ### Claim 16 (depends on 9) The electrostatic discharge protection device as claimed in claim 9, wherein the portion of the first well covered by the first protection layer is larger than or smaller than the portion of the second well covered by the first protection layer. ### Claim 17 An electrostatic discharge protection system, comprising: an electrostatic discharge protection device, coupled between a first voltage pad, a second voltage pad and an IO pad, wherein the electrostatic discharge protection comprises: a substrate; a first well, having a first conductive type and disposed on the substrate; a second well, having a second conductive type and being disposed on the substrate, wherein the second well is adjacent to the first well, and the second conductive type is different from the first conductive type; a first poly-silicon region, disposed on the first well, wherein a first node connects to the first well through the first poly-silicon region; a second poly-silicon region, disposed on the second well, wherein a second node connects to the second well through the second poly-silicon region; and a first protection layer, disposed between the first poly-silicon region and the second poly-silicon region, wherein the first protection layer covers a portion of the first well, a portion of the second well, a portion of the first poly-silicon region and a portion of the second poly-silicon region, and there is no doping region in the portions of the first well and the second well which are covered by the first protection layer and between the first poly-silicon region and the second poly-silicon region. ### Claim 18 (depends on 17) The electrostatic discharge protection system as claimed in claim 17, further comprising: a first doping region, having a second conductive type and disposed in the first well, wherein the first doping region is not adjacent to the first poly-silicon region; a third node, connected to the first doping region; a second doping region, having a first conductive type and disposed in the second well, wherein the second doping region is not adjacent to the second poly-silicon region; and a fourth node, connecting the second doping region. ### Claim 19 (depends on 18) The electrostatic discharge protection system as claimed in claim 18, further comprising: a third doping region, having a first conductive type and disposed in the first well, wherein the third doping region is not adjacent to the first doping region; a fifth node, connecting the third doping region; a fourth doping region, having a second conductive type and disposed in the second well, wherein the fourth doping region is not adjacent to the second doping region; and a sixth node, connecting the fourth doping region. ### Claim 20 (depends on 19) The electrostatic discharge protection system as claimed in claim 19, further comprising: a second protection layer, disposed between the first doping region and the third doping region, wherein the second protection layer covers a portion of the first well, a portion of the first doping region and a portion of the third doping region; and a third protection layer, disposed between the second doping region and the fourth doping region, wherein the third protection layer covers a portion of the second well, a portion of the second doping region and a portion of the fourth doping region.