# US 9,437,574 B2 · Electronic component package and method for forming same

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- Number: US 9,437,574 B2
- Document ID: US9437574B2
- Status: Granted
- Kind: B2
- Application number: 14/042,662
- Filed: 2013-09-30
- Published: 2015-04-02
- Granted: 2016-09-06
- Earliest claimed: 2013-09-30
- Assignees: Freescale Semiconductor, Inc.
- Applicants: Tu-Anh N. Tran; Chu-Chung Lee
- Inventors: Tu-Anh N. Tran; Chu-Chung Lee
- Web page: https://patentgrep.com/patent/US9437574B2

## CPC

- H10W 72/019: {of bond pads}
- H10W 72/07141: {Means for applying energy, e.g. ovens or lasers}
- H10W 72/07521: {Aligning}
- H10W 72/07533: {Ultrasonic bonding, e.g. thermosonic bonding}
- H10W 72/07536: {Soldering or alloying}
- H10W 72/07555: {changes in materials}
- H10W 72/522: {Multilayered bond wires, e.g. having a coating concentric around a core}
- H10W 72/523: {characterised by the structures of the outermost layers, e.g. multilayered coatings}
- H10W 72/536: {the connected ends being ball-shaped}
- H10W 72/552: {comprising metals or metalloids, e.g. silver}
- H10W 72/5522: {comprising gold [Au]}
- H10W 72/5525: {comprising copper [Cu]}
- H10W 72/5528: {Intermetallic compounds}
- H10W 72/555: {of outermost layers of multilayered bond wires, e.g. material of a coating}
- H10W 72/59: Bond pads specially adapted therefor
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/9232: {with additional elements interposed between layers}
- H10W 72/934: {Cross-sectional shape, i.e. in side view}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- Y10T 29/49124: On flat or curved insulated base, e.g., printed circuit, etc.
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

An electronic component package includes a substrate and dielectric structure. The dielectric structure includes a top surface having a protrusion portion and a lower portion. The protrusion portion is located at first height that is greater than a second height of the lower portion. A conductive bond pad is located over the dielectric structure. A ball bond electrically couples the bond pad and a bond wire. An intermetallic compound located between the ball bond and bond pad is formed of material of the ball bond and bond pad and electrically couples the bond pad to the ball bond. A portion of the bond pad is vertically located between a portion of the lower portion of the top surface of the dielectric structure and the intermetallic compound. No portion of the bond pad is vertically located between at least a portion of the protrusion portion and the intermetallic compound.

## Claims

### Claim 1

An electronic component package comprising:
a substrate;
a dielectric structure, the dielectric structure including a top surface, the top surface including a protrusion portion and a lower portion, the protrusion portion being located at first height with respect to the substrate that is greater than a second height of the lower portion with respect to the substrate;
a conductive bond pad located over the dielectric structure;
a bond wire;
a ball bond electrically coupling the bond pad and the bond wire;
an intermetallic compound located between the ball bond and the bond pad and formed of material of the ball bond and the bond pad, the intermetallic compound electrically coupling the bond pad to the ball bond, where a portion of the bond pad is vertically located with respect to the substrate between a portion of the lower portion of the top surface of the dielectric structure and the intermetallic compound, wherein for at least a portion of the protrusion portion, no portion of the bond pad is vertically located between the at least a portion of the protrusion portion and the intermetallic compound and the protrusion portion is located directly under the ball bond.

### Claim 2 (depends on 1)

The electronic component package of claim 1 wherein the bond pad is characterized as an aluminum bond pad.

### Claim 3 (depends on 2)

The electronic component package of claim 2 wherein the bond wire is characterized as a copper bond wire.

### Claim 4 (depends on 3)

The electronic component package of claim 3 wherein the copper bond wire has an outer covering of one of a group consisting palladium, palladium gold, and dielectric insulation.

### Claim 5 (depends on 1)

The electronic component package of claim 1 wherein the protrusion portion includes a ring structure surrounding a portion of the lower portion.

### Claim 6 (depends on 5)

The electronic component of claim 5 wherein the ring structure is characterized as a continuous ring structure.

### Claim 7 (depends on 1)

The electronic component package of claim 1 wherein the protrusion portion includes a first ring structure and a second ring structure, the first ring structure surrounding the second ring structure.

### Claim 8 (depends on 1)

The electronic component package of claim 1 wherein a distance between the first height and the second height is in a range of 2000-5000 Angstroms.

### Claim 9 (depends on 1)

The electronic component package of claim 1 wherein the intermetallic compound has a thickness in the range of 0.03-0.5 microns.

### Claim 10 (depends on 1)

The electronic component package of claim 1 wherein a percentage of an area of the bond pad occupied by the protrusion portion is in a range of 5-20%.

### Claim 11

An electronic component package, comprising:
an electronic component, the electronic component including a substrate and a dielectric structure located over the substrate, the dielectric structure including a top surface, the top surface including a protrusion portion and a lower portion, the protrusion portion being located at a first height with respect to the substrate that is greater than a second height of the lower portion with respect to the substrate, the electronic component further including a conductive bond pad located over the dielectric structure;
a wire bonded to the bond pad wherein the bonding forms of intermetallic compound located between the bond pad and a ball bond electrically coupled to the bond wire, the intermetallic compound electrically coupling the bond pad to the ball bond, wherein a portion of the bond pad is vertically located with respect to the substrate between a portion of the lower portion of the top surface of the dielectric structure and the intermetallic compound, wherein for at least a portion of the protrusion portion, no portion of the bond pad is vertically located between the at least a portion of the protrusion portion and the intermetallic compound, and the protrusion portion is located directly under the ball bond.

### Claim 12 (depends on 11)

The electronic component package of claim 11 wherein the bonding is performed with a capillary tube, wherein the capillary tube has a chamfer with an inner chamfer perimeter and a hole with a hole perimeter, wherein the protrusion portion includes a ring structure having an inner perimeter and an outer perimeter, wherein a first diameter defined by a midpoint between the outer perimeter and the inner perimeter of the ring structure is generally equal to a second diameter defined by a midpoint between the inner chamfer perimeter and the hole perimeter.

### Claim 13 (depends on 11)

The electronic component package of claim 11 wherein the bond pad is characterized as an aluminum bond pad.

### Claim 14 (depends on 13)

The electronic component package of claim 13 wherein the bond wire is characterized as a copper bond wire.

### Claim 15 (depends on 11)

The electronic component package of claim 11 wherein the protrusion portion includes a ring structure surrounding a portion of the lower portion.

### Claim 16 (depends on 15)

The electronic component package of claim 15 wherein the ring structure is characterized as a continuous ring structure.

### Claim 17 (depends on 11)

The electronic component package of claim 11 wherein a distance between the first height and the second height is in a range of 2000-5000 Angstroms.

### Claim 18 (depends on 11)

The electronic component package of claim 11 wherein the dielectric structure includes a first layer and a second layer formed over a first layer, wherein the second layer is patterned to form the protrusion portion, the lower portion is defined by a top surface of the first layer over which the second layer have been removed.