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US 9,437,572 B2Granted
Conductive pad structure for hybrid bonding and methods of forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSheng-Chau Chen, Shih Pei Chou, Yen-Chang Chu, Cheng-Hsien Chou, Chih-Hui Huang, Yeur-Luen Tu
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Abstract
A method embodiment includes patterning an opening through a layer at a surface of a device die. The method further includes forming a liner on sidewalls of the opening, patterning the device die to extend the opening further into the device die. After patterning the device die, the liner is removed. A conductive pad is formed in the device die by filling the opening with a conductive material.
Claims20
A method comprising:
- patterning an opening through a first layer at a surface of a first device die;
- forming a liner on a top surface of the first layer and sidewalls of the opening;
- patterning the first device die to extend the opening further into the first device die, wherein patterning the first device die to extend the opening comprises removing portions of the liner using an etching process that etches the liner at a faster rate than the first layer;
- removing the liner after the patterning the first device die;
- and
- forming a first conductive pad in the first device die by filling the opening with a conductive material.
3 more elements
A method comprising:
- etching a first opening through a first oxide layer on a surface of a first device die, wherein the first opening has a first horizontal dimension, and wherein the first opening further extends into a dielectric layer under the first oxide layer;
- forming a liner contacting a top surface of the first oxide layer, wherein the liner covers sidewalls and a bottom surface of the first opening;
- etching a second opening connected to the first opening in the first device die by etching through first portions of the liner on the bottom surface of the first opening, wherein the second opening has a second horizontal dimension smaller than the first horizontal dimension, and wherein etching the second opening comprises using a chemical etchant that etches the first oxide layer at a slower rate than the liner;
- removing second portions of the liner on sidewalls of the first opening;
- and
- forming a first conductive pad in the first opening and the second opening.
3 more elements
A method comprising:
- patterning a first opening extending through a first dielectric layer at a top surface of a first die, wherein the first opening comprises:
- a first portion in the first dielectric layer;
- and
- a second portion under the first portion, wherein the first portion is wider than the second portion;
- filling the first opening with a conductive material to form a first conductive pad;
- providing a second die comprising a second conductive pad extending through a second dielectric layer at a top surface of the second die;
- aligning the first conductive pad to the second conductive pad;
- bonding the first dielectric layer to the second dielectric layer, wherein after bonding the first dielectric layer to the second dielectric layer, a void is disposed between the first conductive pad and the second conductive pad;
- and
- annealing the first die and the second die to bond the first conductive pad to the second conductive pad, wherein annealing the first die and the second die fills the void.
7 more elements
Dependencies are inferred from the claim text.