# US 9,437,563 B2 · Bump structures in semiconductor packages and methods of fabricating the same

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- Number: US 9,437,563 B2
- Document ID: US9437563B2
- Status: Granted
- Kind: B2
- Application number: 14/546,815
- Filed: 2014-11-18
- Published: 2015-03-12
- Granted: 2016-09-06
- Earliest claimed: 2012-08-30
- Assignees: SK hynix Inc.
- Applicants: SK hynix Inc.
- Inventors: Taek Joong Kim; Yong Su Han
- Web page: https://patentgrep.com/patent/US9437563B2

## CPC

- H10W 72/012: {of bump connectors, dummy bumps or thermal bumps}
- H10W 72/019: {of bond pads}
- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W 72/90: Bond pads, in general
- H10W 72/01215: {forming coatings}
- H10W 72/01235: {by plating, e.g. electroless plating or electroplating}
- H10W 72/01251: {Changing the shapes of bumps}
- H10W 72/01255: {by using masks}
- H10W 72/01935: {by plating, e.g. electroless plating or electroplating}
- H10W 72/221: {Structures or relative sizes}
- H10W 72/223: {characterised by the structure of the outermost layers, e.g. multilayered coatings}
- H10W 72/234: {Cross-sectional shape, i.e. in side view}
- H10W 72/245: {of outermost layers of multilayered bumps, e.g. bump coating being only on a part of a bump core}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/255: {of outermost layers of multilayered bumps, e.g. material of a coating}
- H10W 72/283: {Reinforcing structures, e.g. bump collars}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/934: {Cross-sectional shape, i.e. in side view}
- H10W 72/9415: {relative to the surface, e.g. recessed, protruding}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The bump structure includes a metal pattern disposed on an electrode pad to have a vertical sidewall and a recessed region surrounded by the vertical sidewalls, a metal post including a lower portion inserted into the recessed region and a protruded portion upwardly extending from the lower portion, and a passivation spacer on a sidewall of the metal post. The metal post is electrically connected to the electrode pad.

## Claims

### Claim 1

A method of fabricating a bump structure, the method comprising:
forming an insulation layer on a substrate, the insulation layer being formed to include an opening that exposes an electrode pad on the substrate;
forming a metal film on the insulation layer and on the opening of the insulation layer;
forming a mask pattern on the metal film, the mask pattern being formed to include an opening that exposes the metal film on the electrode pad;
forming a metal post on the metal film exposed by the opening of the mask pattern;
forming a passivation spacer on a sidewall of the metal post; and
removing the metal film on the insulation layer to form a metal pattern having a vertical sidewall on the electrode pad,
wherein the vertical sidewall of the metal pattern is formed to include a protrusion that outwardly extends from a sidewall of the metal post.

### Claim 2 (depends on 1)

The method of claim 1, wherein the mask pattern is formed of a photoresist material.

### Claim 3 (depends on 2)

The method of claim 2, wherein the metal post is formed to include copper.

### Claim 4 (depends on 2)

The method of claim 2, wherein forming the passivation spacer includes:
removing the mask pattern;
forming a passivation layer on the metal film and the metal post; and
etching back the passivation layer to leave a portion of the passivation layer on the sidewall of the metal post.

### Claim 5 (depends on 4)

The method of claim 4, wherein the passivation layer is formed to include an oxide layer.

### Claim 6 (depends on 1)

The method of claim 1, wherein the protrusion of the vertical sidewall of the metal pattern is formed to laterally extend from the sidewall of the metal post.

### Claim 7 (depends on 2)

The method of claim 2, wherein the passivation spacer is formed to cover a portion of the sidewall of the metal post.

### Claim 8 (depends on 2)

The method of claim 2, wherein an outer sidewall of the passivation spacer is formed to have a profile such that a horizontal width of the passivation spacer is reduced toward an upper end thereof.

### Claim 9 (depends on 2)

The method of claim 2, wherein the passivation spacer is formed to cover an entire portion of the sidewall of the metal post.