# US 9,437,562 B2 · Semiconductor device and manufacturing method of semiconductor device

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- Number: US 9,437,562 B2
- Document ID: US9437562B2
- Status: Granted
- Kind: B2
- Application number: 14/469,056
- Filed: 2014-08-26
- Published: 2015-03-05
- Granted: 2016-09-06
- Earliest claimed: 2013-09-03
- Assignees: Toyota Jidosha Kabushiki Kaisha
- Applicants: Toyota Jidosha Kabushiki Kaisha
- Inventors: Takashi Ushijima; Atsushi Imai; Jiro Nohara
- Web page: https://patentgrep.com/patent/US9437562B2

## CPC

- H10W 74/137: {the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence)}
- H10W 72/01255: {by using masks}
- H10W 72/01925: {in solid form}
- H10W 72/01935: {by plating, e.g. electroless plating or electroplating}
- H10W 72/01938: {in gaseous form, e.g. by CVD or PVD}
- H10W 72/01955: {by using masks}
- H10W 72/07236: {Soldering or alloying}
- H10W 72/07252: {changes in structures or sizes}
- H10W 72/07253: {changes in shapes}
- H10W 72/07254: {changes in dispositions}
- H10W 72/221: {Structures or relative sizes}
- H10W 72/232: {Plan-view shape, i.e. in top view}
- H10W 72/234: {Cross-sectional shape, i.e. in side view}
- H10W 72/242: {relative to the surface, e.g. recessed, protruding}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/287: {Flow barriers}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/59: Bond pads specially adapted therefor
- H10W 72/932: {Plan-view shape, i.e. in top view}
- H10W 72/934: {Cross-sectional shape, i.e. in side view}
- H10W 72/9415: {relative to the surface, e.g. recessed, protruding}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A manufacturing method of a semiconductor device includes placing a mask having an opening on an external region of a top face of a substrate to locate an end portion of the opening of the mask just above a concave portion formed on the top face of the substrate, the external region being located outside the concave portion. The manufacturing method further includes: growing a conductive film on part of the top face of the substrate through the mask after the mask is placed on the substrate, the part of the top face containing the concave portion; and removing the mask from the substrate after the conductive film is grown.

## Claims

### Claim 1

A manufacturing method of a semiconductor device, comprising:
placing a mask having an opening on an external region of a top face of a substrate to locate an end portion of the opening of the mask just above a concave portion formed on the top face of the substrate, the external region being located outside the concave portion;
growing a conductive film on part of the top face of the substrate through the mask after the mask is placed on the substrate, the part of the top face containing the concave portion; and
removing the mask from the substrate after the conductive film is grown,
wherein the concave portion is a groove continuously surrounding an internal region of the top face of the substrate, the internal region being located inside the concave portion, and
a width of the groove is equal to or more than a sum of a manufacturing error of an opening width of the mask in a width direction of the groove and two times a placing position error of the mask in the width direction of the groove.

### Claim 2

A manufacturing method of a semiconductor device, comprising;
placing a mask having an opening on an external region of a top face of a substrate to locate an end portion of the opening of the mask just above a concave portion formed on the top face of the substrate, the external region being located outside the concave portion;
growing a conductive film on part of the top face of the substrate through the mask after the mask is placed on the substrate, the part of the top face containing the concave portion;
removing the mask from the substrate after the conductive film is grown, and
forming the concave portion by forming an insulation film on surfaces of stepped structures which are formed with an interval between the stepped structures.

### Claim 3

A manufacturing method of a semiconductor device, comprising:
placing a mask having an opening on an external region of a top face of a substrate to locate an end portion of the opening of the mask just above a concave portion formed on the top face of the substrate, the external region being located outside the concave portion;
growing a conductive film on part of the top face of the substrate through the mask after the mask is placed on the substrate, the part of the top face containing the concave portion; and
removing the mask from the substrate after the conductive film is grown,
wherein the concave portion is a groove continuously surrounding an internal region of the top face of the substrate, the internal region being located inside the concave portion, and
a width of the groove is equal to or more than a sum of a manufacturing error of an opening width of the mask in a width direction of the groove and two times a placing position error of the mask in the width direction of the groove.

### Claim 4

A manufacturing method of a semiconductor device, comprising:
forming a concave portion on a top surface of a substrate by forming an insulation film on surfaces of stepped structures which are formed with an interval between the stepped structures,
placing a mask having an opening on an external region of the top face of the substrate to locate an end portion of the opening of the mask just above the concave portion formed on the top face of the substrate, the external region being located outside the concave portion;
growing a conductive film on part of the top face of the substrate through the mask after the mask is placed on the substrate, the part of the top face containing the concave portion; and
removing the mask from the substrate after the conductive film is grown.