# US 9,437,545 B2 · Interconnects having sealing structures to enable selective metal capping layers

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- Number: US 9,437,545 B2
- Document ID: US9437545B2
- Status: Granted
- Kind: B2
- Application number: 14/569,342
- Filed: 2014-12-12
- Published: 2015-04-09
- Granted: 2016-09-06
- Earliest claimed: 2005-06-03
- Assignees: Intel Corporation
- Applicants: Intel Corporation
- Inventors: Jun He; Kevin J. Fischer; Ying Zhou; Peter K. Moon
- Web page: https://patentgrep.com/patent/US9437545B2

## CPC

- H10W 20/037: {the barrier, adhesion or liner layers being on top of a main fill metal}
- H10P 14/414: {of metal-silicide materials}
- H10P 14/6319: {Formation by plasma treatments, e.g. plasma oxidation of the substrate}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10W 20/034: {bottomless barrier, adhesion or liner layers}
- H10W 20/048: {by using plasmas or gaseous environments, e.g. by nitriding}
- H10W 20/054: {by selectively removing parts thereof (H10W20/034 takes precedence)}
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10W 20/065: {by making at least a portion of the conductive part non-conductive, e.g. by oxidation}
- H10W 20/077: {on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence)}
- H10W 20/081: {by forming openings in the dielectric parts}
- H10W 20/425: {Barrier, adhesion or liner layers}
- H10W 20/435: {Cross-sectional shapes or dispositions of interconnections}
- H10W 20/4403: {based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence)}
- H10W 20/4421: {the principal metal being copper}
- H10W 20/48: Insulating materials thereof
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which substantially reduces or prevents electromigration and/or diffusion of conductive material from the capped interconnect.

## Claims

### Claim 1

A method of fabricating an interconnect structure, comprising:
providing an interconnect including a conductive material extending into a dielectric material layer;
forming capping layer proximate said interconnect;
forming a sealing structure to seal at least one gap of exposed interconnect conductive material between said capping layer and said dielectric layer; and
exposing the exposed interconnect conductive material to silane to form a first salicide layer; and
exposing the first salicide layer to an ammonia source to form a silicon nitride layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein forming the sealing structure comprises:
exposing an exposed surface of the capping layer to silane to form a second salicide layer; and
exposing the second salicide layer to the ammonia source to form the silicon nitride layer.

### Claim 3 (depends on 2)

The method of claim 2, wherein said sealing structure comprises the silicon nitride layer that is different than the capping material layer.

### Claim 4 (depends on 2)

The method of claim 2, wherein the first silicide layer is formed at a different rate than the second silicide layer.

### Claim 5

A method of fabricating an interconnect structure, comprising:
providing a dielectric material layer;
forming an opening within said dielectric material layer;
forming a barrier material layer on at least one sidewall and bottom of said opening;
disposing a conductive material within said opening and abutting said barrier material layer;
forming capping layer proximate said conductive material;
forming a sealing structure to seal at least one gap of exposed conductive material between said capping layer and said dielectric layer, wherein forming said sealing structure comprises forming a salicide in portions of a conductive material of said interconnect by exposure to silane and exposing said salicide to an ammonia source to form a silicon nitride layer.

### Claim 6 (depends on 5)

The method of claim 5, wherein the sealing structure comprises the silicon nitride layer that is different than the capping material layer.