# US 9,437,534 B2 · Enhanced flip chip structure using copper column interconnect

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- Number: US 9,437,534 B2
- Document ID: US9437534B2
- Status: Granted
- Kind: B2
- Application number: 14/714,331
- Filed: 2015-05-17
- Published: 2015-09-03
- Granted: 2016-09-06
- Earliest claimed: 2012-02-29
- Assignees: Mediatek Inc.
- Applicants: Mediatek Inc.
- Inventors: Thomas Matthew Gregorich; Tzu-Hung Lin; Che-Ya Chou
- Web page: https://patentgrep.com/patent/US9437534B2

## CPC

- H10W 70/685: comprising multiple insulating layers
- H10W 70/635: {Through-vias}
- H10W 70/65: Shapes or dispositions of interconnections
- H10W 72/072: {of bump connectors}
- H10W 72/07227: {involving guiding structures, e.g. spacers or supporting members}
- H10W 72/07236: {Soldering or alloying}
- H10W 72/07254: {changes in dispositions}
- H10W 72/222: {Multilayered bumps, e.g. a coating on top and side surfaces of a bump core}
- H10W 72/232: {Plan-view shape, i.e. in top view}
- H10W 72/241: {Dispositions, e.g. layouts}
- H10W 72/244: {relative to underlying supporting features, e.g. bond pads, RDLs or vias}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/9415: {relative to the surface, e.g. recessed, protruding}
- H10W 72/951: {Materials of bond pads}
- H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A flip chip package includes: a carrier coupled to a die. The carrier includes: at least a via, for coupling the surface of the carrier to electrical traces in the carrier; and at least a capture pad electrically coupled to the via, wherein the capture pad is plated over the via. The die includes: at least a bond pad formed on the surface of the die; and at least a copper column, formed on the bond pad for coupling the die to the capture pad on the carrier, wherein part of the copper column overhangs the via opening.

## Claims

### Claim 1

A flip chip package comprising:
a carrier, comprising:
at least a via, for coupling the surface of the carrier to electrical traces in the carrier, wherein the via is open and unfilled; and
at least a capture pad electrically coupled to the via, wherein the capture pad is plated over the via; and
a die, coupled to the carrier, comprising:
at least a bond pad formed on the surface of the die; and
at least a copper column, formed on the bond pad for coupling the die to the capture pad on the carrier, wherein part of the copper column overhangs the via opening and part of the copper column does not overhang the via opening, so that only part of the via opening is covered by the copper column.

### Claim 2 (depends on 1)

The flip chip package of claim 1, wherein the capture pad is asymmetrical about at least one axis running through the centre of the via opening, and the part of the copper column which does not overhang the via opening is disposed on the side of the capture pad having a greater surface area.

### Claim 3 (depends on 2)

The flip chip package of claim 2, wherein the copper column is curved about the vertical plane such that it has at least one axis of asymmetry.

### Claim 4 (depends on 3)

The flip chip package of claim 3, wherein the capture pad is egg shaped and a top view of the copper column is C-shaped.

### Claim 5 (depends on 2)

The flip chip package of claim 2, wherein the capture pad comprises a rectangular section which is formed on one side about the via opening, and the part of the copper column which does not overhang the via opening copper column is disposed on the rectangular section.

### Claim 6 (depends on 1)

The flip chip package of claim 1, wherein the copper column overhangs the bond pad.

### Claim 7 (depends on 2)

The flip chip package of claim 2, wherein at least one side of the copper column is parallel to an edge of the bond pad.