# US 9,437,518 B2 · Semiconductor module

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- Number: US 9,437,518 B2
- Document ID: US9437518B2
- Status: Granted
- Kind: B2
- Application number: 14/066,008
- Filed: 2013-10-29
- Published: 2014-05-01
- Granted: 2016-09-06
- Earliest claimed: 2012-10-29
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Jaebum Byun; Heeyoub Kang; Dongok Kwak; Junghoon Kim; Joonyoung Oh; Won-Hwa Lee; Jae-Woo Jeong; Jinyoung Choi
- Web page: https://patentgrep.com/patent/US9437518B2

## CPC

- H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections
- H10W 40/28: comprising Peltier coolers
- H10W 40/70: Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
- H10W 42/20: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/877: {Bump connectors and die-attach connectors}
- H10W 72/944: {Dispositions of multiple bond pads}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor module may include a heat-transferring part connecting at least one of a control device, a buffer semiconductor device, and a memory device to a connector. The heat-transferring part may be configured to have a thermal conductivity higher than the substrate. Accordingly, during the operation of the semiconductor module, the connector can have a temperature lower than the devices.

## Claims

### Claim 1

A semiconductor module comprising:
a substrate;
a control device mounted on a bottom surface of the substrate;
a buffer semiconductor device mounted on the bottom surface of the substrate;
a memory device mounted on the bottom surface of the substrate;
a heat-transferring part contacting the control device;
an electrical connector that is configured to connect the semiconductor module to an external device and that is provided on a side surface of the substrate and contacting the heat-transferring part;
a passive device pad disposed on a top surface of the substrate;
a passive device disposed on the passive device pad;
a thermoelectric pad disposed on the passive device; and
a case contacting the thermoelectric pad and surrounding the substrate, the passive device pad, the passive device, and the thermoelectric pad.

### Claim 2 (depends on 1)

The semiconductor module of claim 1, wherein the heat-transferring part has a thermal conductivity that is higher than a thermal conductivity of the substrate.

### Claim 3 (depends on 1)

The semiconductor module of claim 1, wherein the heat-transferring part comprises:
a thermal path; and
a pad provided between the thermal path and the connector and between the thermal path and the control device.

### Claim 4 (depends on 3)

The semiconductor module of claim 3, wherein the heat-transferring part extends to contact the buffer semiconductor device, and
the pad extends between the buffer semiconductor device and the connector.

### Claim 5 (depends on 3)

The semiconductor module of claim 3, wherein the heat-transferring part extends to contact the memory device, and
the pad extends between the memory device and the connector.

### Claim 6 (depends on 1)

The semiconductor module of claim 1, further comprising interconnection lines contacting the substrate and the connector,
wherein the interconnection lines comprise:
a power/signal interconnection line spaced apart from the heat-transferring part; and
a ground interconnection line contacting the heat-transferring part.

### Claim 7

A semiconductor module comprising:
a substrate;
a control device mounted on a bottom surface of the substrate;
a buffer semiconductor device mounted on the bottom surface of the substrate;
a first memory device mounted on the bottom surface of the substrate;
a second memory device mounted on a top surface of the substrate;
an upper heat-transferring part provided on the top surface of the substrate and contacting the second memory device;
an electrical connector that is configured to connect the semiconductor module to an external device and that is provided on a first side surface of the substrate and contacting the upper heat-transferring part;
a passive device pad disposed on the top surface of the substrate;
a passive device disposed on the passive device pad;
a thermoelectric pad disposed on the passive device; and
a case contacting the thermoelectric pad and surrounding the substrate, the passive device pad, the passive device, and the thermoelectric pad.

### Claim 8 (depends on 7)

The semiconductor module of claim 7, wherein the upper heat-transferring part has a thermal conductivity that is higher than a thermal conductivity of the substrate.

### Claim 9 (depends on 7)

The semiconductor module of claim 7, further comprising a lower heat-transferring part contacting the connector and at least one of the control device, the buffer semiconductor device, and the first memory device.

### Claim 10 (depends on 9)

The semiconductor module of claim 9, wherein the upper heat-transferring part extends along a second side surface of the substrate and is connected to the lower heat-transferring part, and
the substrate is enclosed by the upper heat-transferring part, the lower heat-transferring part and the connector.

### Claim 11 (depends on 10)

The semiconductor module of claim 10, wherein the upper heat-transferring part has a top surface spaced apart from the substrate and having a groove, zigzag, or uneven shape.

### Claim 12

A semiconductor module comprising:
a substrate;
an electrical connector that is configured to connect the semiconductor module to an external device and that is provided on a side surface of the substrate;
at least one of a control device, a buffer semiconductor device, a first memory device and a second memory device, mounted on a surface of the substrate;
a first heat-transferring part contacting the connector and the at least one of the control device, the buffer semiconductor device, the first memory device and the second memory device, wherein the first heat-transferring part is configured to transfer heat generated in the at least one of the control device, the buffer semiconductor device, the first memory device and the second memory device to the connector;
a passive device pad disposed on a top surface of the substrate;
a passive device disposed on the passive device pad;
a thermoelectric pad disposed on the passive device; and
a case contacting the thermoelectric pad and surrounding the substrate, the passive device pad, the passive device, and the thermoelectric pad.

### Claim 13 (depends on 12)

The semiconductor module of claim 12, wherein the first heat-transferring part has a thermal conductivity that is higher than a thermal conductivity of the substrate.

### Claim 14 (depends on 12)

The semiconductor module of claim 12, wherein the first heat-transferring part comprises:
a first thermal path; and
a first pad disposed between the first thermal path and the connector and between the thermal path and the at least one of the control device, the buffer semiconductor device, the first memory device and the second memory device.

### Claim 15 (depends on 12)

The semiconductor module of claim 12, further comprising a second heat-transferring part contacting the connector and the second memory device, and configured to transfer heat generated in the second memory device to the connector,
wherein the surface of the substrate comprises the top surface of the substrate and a bottom surface of the substrate, and
wherein the second memory device is mounted on the top surface of substrate,
the control device, the buffer semiconductor device and the first memory device are mounted on the bottom surface of the substrate, and
the first heat-transferring part contacts the control device and is configured to transfer heat generated in the control device to the connector.

### Claim 16 (depends on 15)

The semiconductor module of claim 15, wherein the first heat-transferring part contacts the buffer semiconductor device.

### Claim 17 (depends on 15)

The semiconductor module of claim 15, wherein the first heat-transferring part contacts the buffer semiconductor device and the first memory device.

### Claim 18 (depends on 15)

The semiconductor module of claim 15, wherein the second heat-transferring part is connected to the first heat-transferring part, and
the substrate is enclosed by the first heat-transferring part, the second heat-transferring part and the connector.

### Claim 19 (depends on 15)

The semiconductor module of claim 15, wherein at least one of the first heat-transferring part and the second heat-transferring part has a surface having a groove, zigzag, or uneven shape.