# US 9,437,479 B2 · Methods for forming an interconnect pattern on a substrate

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- Number: US 9,437,479 B2
- Document ID: US9437479B2
- Status: Granted
- Kind: B2
- Application number: 14/523,302
- Filed: 2014-10-24
- Published: 2015-05-21
- Granted: 2016-09-06
- Earliest claimed: 2013-11-19
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: Suketu A. Parikh; Mehul Naik
- Web page: https://patentgrep.com/patent/US9437479B2

## CPC

- H10W 20/081: {by forming openings in the dielectric parts}
- H10W 20/062: {by smoothing of conductive parts, e.g. by planarisation}
- H10W 20/072: {of dielectric parts comprising air gaps}
- H10W 20/46: comprising air gaps
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Embodiments of methods for forming interconnect patterns on a substrate are provided herein. In some embodiments, a method for forming an interconnect pattern atop a substrate includes depositing a porous dielectric layer atop a cap layer and a plurality of spacers disposed atop the cap layer, wherein the cap layer is disposed atop a bulk dielectric layer and the bulk dielectric layer is disposed atop a substrate; removing a portion of the porous dielectric layer; removing the plurality of spacers to form features in the porous dielectric layer; and etching the cap layer to extend the features through the cap layer.

## Claims

### Claim 1

A method for forming an interconnect pattern atop a substrate, comprising:
depositing a porous dielectric layer atop a cap layer and a plurality of spacers disposed atop the cap layer, wherein the cap layer is disposed atop a bulk dielectric layer and the bulk dielectric layer is disposed atop a substrate;
selectively depositing a photoresist layer atop an area of the porous dielectric layer where no features are to be formed in the porous dielectric layer;
subsequently removing a portion of the porous dielectric layer;
removing the plurality of spacers to form features in the porous dielectric layer; and
etching the cap layer to extend the features through the cap layer.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
filling the features with a metal after etching the cap layer.

### Claim 3 (depends on 1)

The method of claim 1, wherein the substrate further comprises a barrier layer disposed beneath the bulk dielectric layer.

### Claim 4 (depends on 3)

The method of claim 3, wherein the substrate further comprises a dielectric layer disposed beneath the barrier layer, wherein the dielectric layer comprises second features formed in the dielectric layer that are filled with a conductive material.

### Claim 5 (depends on 4)

The method of claim 4, wherein the features formed in the porous dielectric layer are aligned with, and disposed above, the second features formed in the dielectric layer.

### Claim 6 (depends on 1)

The method of claim 1, wherein the bulk dielectric layer comprises third features formed in the bulk dielectric layer that are filled with a metal containing material, a silicon containing material or a carbon containing material.

### Claim 7 (depends on 6)

The method of claim 6, wherein the method further comprises:
removing the silicon containing material from the bulk dielectric layer to extend the features through the bulk dielectric layer.

### Claim 8 (depends on 1)

The method of claim 1, wherein depositing the porous dielectric layer comprises depositing the porous dielectric layer such that one or more voids are formed within the porous dielectric layer.

### Claim 9 (depends on 1)

The method of claim 1, further comprising:
removing the photoresist layer while removing the portion of the porous dielectric layer.

### Claim 10

A method for forming an interconnect pattern atop a substrate, comprising:
depositing a porous dielectric layer atop a cap layer and a plurality of spacers disposed atop the cap layer such that one or more voids are formed within the porous dielectric layer, wherein the cap layer is disposed atop a bulk dielectric layer and the bulk dielectric layer is disposed atop a substrate;
selectively depositing a photoresist layer atop the porous dielectric layer atop an area of the porous dielectric layer where no features are to be formed in the porous dielectric layer;
removing a portion of the porous dielectric layer through the photoresist layer;
removing the plurality of spacers to form features in the porous dielectric layer; and
etching the cap layer to extend the features through the cap layer.

### Claim 11 (depends on 10)

The method of claim 10, wherein the substrate further comprises a barrier layer disposed beneath the bulk dielectric layer, and a dielectric layer disposed beneath the barrier layer, wherein the dielectric layer comprises second features formed in the dielectric layer that are filled with a conductive material, and wherein the features formed in the porous dielectric layer are aligned with, and disposed above, the second features formed in the dielectric layer.

### Claim 12 (depends on 11)

The method of claim 11, further comprising:
filling the features with a metal after etching the cap layer.

### Claim 13 (depends on 10)

The method of claim 10, further comprising:
removing the photoresist layer while removing the portion of the porous dielectric layer.

### Claim 14

A computer readable medium, having instructions stored thereon that, when executed, cause a method for etching features into a substrate to be performed, the method comprising:
depositing a porous dielectric layer atop a cap layer and a plurality of spacers disposed atop the cap layer, wherein the cap layer is disposed atop a bulk dielectric layer and the bulk dielectric layer is disposed atop a substrate;
selectively depositing a photoresist layer atop an area of the porous dielectric layer where no features are to be formed in the porous dielectric layer;
subsequently removing a portion of the porous dielectric layer;
removing the plurality of spacers to form features in the porous dielectric layer; and
etching the cap layer to extend the features through the cap layer.

### Claim 15 (depends on 14)

The computer readable medium of claim 14, wherein the method further comprises:
filling the features with a metal after etching the cap layer.

### Claim 16 (depends on 14)

The computer readable medium of claim 14, wherein the bulk dielectric layer comprises third features formed in the bulk dielectric layer that are filled with a metal containing material, a silicon containing material or a carbon containing material, and wherein the method further comprises:
removing the silicon containing material from the bulk dielectric layer to extend the features through the bulk dielectric layer.

### Claim 17 (depends on 14)

The computer readable medium of claim 14, wherein the method further comprises depositing the porous dielectric layer such that one or more voids are formed within the porous dielectric layer.

### Claim 18 (depends on 14)

The computer readable medium of claim 14, wherein the method further comprises:
removing the photoresist layer while removing the portion of the porous dielectric layer.