# US 9,437,477 B1 · Pattern forming method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,437,477 B1 - Document ID: US9437477B1 - Status: Granted - Kind: B1 - Application number: 14/844,152 - Filed: 2015-09-03 - Granted: 2016-09-06 - Earliest claimed: 2015-03-31 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Kabushiki Kaisha Toshiba - Inventors: Makoto Aida - Web page: https://patentgrep.com/patent/US9437477B1 ## CPC - H10P 76/4085: {characterised by the processes involved to create the masks} - G03F 7/0035: {Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface} - G03F 7/095: having more than one photosensitive layer (G03F7/075 takes precedence) - G03F 7/11: having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} - G03F 7/16: Coating processes; Apparatus therefor (applying coatings to base materials in general B05; applying photosensitive compositions to base for photographic purposes G03C1/74) - H10P 30/22: using masks - H10P 50/73: {using masks for insulating materials} - H10P 76/20: of masks comprising organic materials - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract In one embodiment, a pattern forming method includes forming a first film on a substrate that includes a convex portion and a concave portion so as to expose an upper end of the convex portion. The method further includes forming a photosensitive second film on the first film so as to cover the upper end of the convex portion. The method further includes exposing the second film to light. The method further includes developing the second film with a development liquid to form a second pattern of the second film. The method further includes dissolving and removing the first film exposed from the second pattern with a liquid to form a first pattern of the first film. ## Claims ### Claim 1 A pattern forming method comprising: forming a first film on a substrate that includes a convex portion and a concave portion so as to expose an upper end of the convex portion; forming a photosensitive second film on the first film so as to cover the upper end of the convex portion; exposing the second film to light; developing the second film with a development liquid to form a second pattern of the second film; and dissolving and removing the first film exposed from the second pattern with a liquid to form a first pattern of the first film. ### Claim 2 (depends on 1) The method of claim 1, wherein: the first film is formed by using a first coating liquid having a first viscosity; and the second film is formed by using a second coating liquid having a second viscosity higher than the first viscosity. ### Claim 3 (depends on 2) The method of claim 2, wherein the first viscosity is 4 cP or less. ### Claim 4 (depends on 3) The method of claim 3, wherein the first viscosity is 2 to 3 CP. ### Claim 5 (depends on 2) The method of claim 2, wherein the second viscosity is more than 4 CP. ### Claim 6 (depends on 5) The method of claim 5, wherein the second viscosity is 10 to 100 CP. ### Claim 7 (depends on 1) The method of claim 1, further comprising hydrophilizing a surface of the substrate before the first film is formed. ### Claim 8 (depends on 1) The method of claim 1, further comprising hydrophobizing surfaces of the substrate and the first film before the second film is formed. ### Claim 9 (depends on 1) The method of claim 1, wherein the first film is a water-soluble resin. ### Claim 10 (depends on 1) The method of claim 1, wherein the first film is non-photosensitive. ### Claim 11 (depends on 1) The method of claim 1, wherein the first film is photosensitive. ### Claim 12 (depends on 1) The method of claim 1, wherein the liquid for the dissolving and removing is the development liquid. ### Claim 13 (depends on 1) The method of claim 1, wherein the liquid for the dissolving and removing is a liquid different from the development liquid. ### Claim 14 (depends on 1) The method of claim 1, wherein the liquid different from the development liquid is water. ### Claim 15 (depends on 1) The method of claim 1, further comprising implanting ions into the substrate at a bottom of the concave portion by using the first and second patterns as a mask. ### Claim 16 (depends on 1) The method of claim 1, wherein the convex portion includes insulating layers and interconnect layers that are alternately provided, and includes a first insulator, a charge storing layer, a second insulator and a semiconductor layer provided on side surfaces of the insulating layers and the interconnect layers. ### Claim 17 (depends on 16) The method of claim 16, further comprising forming a first plug interconnect electrically connected with the substrate at a bottom of the concave portion. ### Claim 18 (depends on 17) The method of claim 17, further comprising forming a second plug interconnect electrically connected with the semiconductor layer. ### Claim 19 A pattern forming method comprising: forming a first film on a substrate that includes a convex portion and first and second concave portions so as to expose an upper end of the convex portion; forming a photosensitive second film on the first film so as to cover the upper end of the convex portion; exposing the second film to light and developing the second film to form a second pattern of the second film; removing the first film exposed from the second pattern to form a first pattern of the first film; implanting first ions into the substrate at a bottom of the first concave portion by using the first and second patterns as a mask; forming a third film on the substrate so as to expose the upper end of the convex portion; forming a fourth photosensitive film on the third film so as to cover the upper end of the convex portion; exposing the fourth film to light and developing the fourth film to form a fourth pattern of the fourth film; removing the third film exposed from the fourth pattern to form a third pattern of the third film; and implanting second ions into the substrate at a bottom of the second concave portion by using the third and fourth patterns as a mask. ### Claim 20 A pattern forming method comprising: preparing a substrate including a first region that includes first convex portions at a first density and a second region that includes second convex portions at a second density lower than the first density; forming a first film on the substrate so as to expose upper ends of the first and second convex portions; forming a photosensitive second film on the first film so as to cover the upper ends of the first and second convex portions; exposing the second film to light and developing the second film to form a second pattern of the second film; and removing the first film exposed from the second pattern to form a first pattern of the first film.