# US 9,437,463 B2 · Heating device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 9,437,463 B2
- Document ID: US9437463B2
- Status: Granted
- Kind: B2
- Application number: 13/863,729
- Filed: 2013-04-16
- Published: 2013-08-29
- Granted: 2016-09-06
- Earliest claimed: 2010-10-25
- Assignees: NGK Insulators, Ltd.
- Applicants: Ngk Insulators, Ltd.
- Inventors: Nobuyuki Kondo; Morimichi Watanabe; Asumi Jindo; Yuji Katsuda; Yosuke Sato; Yoshinori Isoda
- Web page: https://patentgrep.com/patent/US9437463B2

## CPC

- H10P 72/00: Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- B32B 18/00: Layered products essentially comprising ceramics, e.g. refractory products
- C04B 35/58: based on borides, nitrides, {i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides} or silicides {(containing free binder metal C22C29/00)}
- C04B 35/581: based on aluminium nitride
- C04B 35/6261: {Milling}
- C04B 35/62655: {Drying, e.g. freeze-drying, spray-drying, microwave or supercritical drying}
- C04B 35/645: Pressure sintering
- C04B 37/001: {directly with other burned ceramic articles}
- C04B 37/003: {by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts}
- C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy}
- H05B 1/00: Details of electric heating devices
- H05B 3/283: {the insulating material being an inorganic material, e.g. ceramic}
- H10P 72/72: using electrostatic chucks
- C04B 2235/3206: Magnesium oxides or oxide-forming salts thereof
- C04B 2235/3217: Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
- C04B 2235/3222: Aluminates other than alumino-silicates, e.g. spinel (MgAl2O4)
- C04B 2235/3225: Yttrium oxide or oxide-forming salts thereof
- C04B 2235/3865: Aluminium nitrides
- C04B 2235/5445: submicron sized, i.e. from 0,1 to 1 micron
- C04B 2235/77: Density
- C04B 2235/80: Phases present in the sintered or melt-cast ceramic products other than the main phase
- C04B 2235/96: Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B 2235/9607: Thermal properties, e.g. thermal expansion coefficient
- C04B 2237/08: Non-oxidic interlayers
- C04B 2237/34: Oxidic
- C04B 2237/343: Alumina or aluminates
- C04B 2237/36: Non-oxidic
- C04B 2237/366: Aluminium nitride
- C04B 2237/58: Forming a gradient in composition or in properties across the laminate or the joined articles
- C04B 2237/704: of one or more of the ceramic layers or articles
- C04B 2237/708: of one or more of the interlayers
- C04B 2237/72: Forming laminates or joined articles comprising at least two interlayers directly next to each other
- Y10T 428/24942: including components having same physical characteristic in differing degree
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A heating apparatus includes a susceptor having a heating face of heating a semiconductor and a supporting part joined with a back face of the susceptor. The susceptor comprises a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2θ=47 to 50° by CuKα X-ray.

## Claims

### Claim 1

A heating apparatus for a semiconductor manufacturing system comprising:
a susceptor comprising a heating face of heating a semiconductor and a back face and a supporting part bonded with said back face of said susceptor,
wherein said susceptor comprises a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components, and
wherein said ceramic material comprises at least 50 vol % magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2θ=47 to 50° taken by using CuKα ray.

### Claim 2 (depends on 1)

The heating apparatus of claim 1, wherein said supporting part comprises said ceramic material.

### Claim 3 (depends on 1)

The heating apparatus of claim 1, further comprising:
a heat generator embedded in said susceptor; and
an electrical supplying member contained in an inner space of said supporting part and electrically connected to said heat generator.

### Claim 4 (depends on 1)

The heating apparatus of claim 1, wherein said 2θ is 47 to 49°.

### Claim 5 (depends on 1)

The heating apparatus of claim 1, said ceramic material comprising a sub phase comprising a crystal phase of MgO—AlN solid solution wherein aluminum nitride is dissolved into magnesium oxide.

### Claim 6 (depends on 5)

The heating apparatus of claim 5, wherein said MgO—AlN solid solution has XRD peaks at (200) and (220) faces taken by using CuKα ray in ranges of 2θ=42.9 to 44.8° and 62.3 to 65.2° , respectively, which are between peaks of cubic phase of magnesium oxide and cubic phase of aluminum nitride, respectively.

### Claim 7 (depends on 5)

The heating apparatus of claim 5, wherein said MgO—AlN solid solution has an XRD peak at (111) face taken by using CuKα ray in a range of 2θ=36.9 to 39° , which is between peaks of cubic phase of magnesium oxide and cubic phase of aluminum nitride.

### Claim 8 (depends on 1)

The heating apparatus of claim 1, wherein said ceramic material does not contain AlN crystal phase.

### Claim 9 (depends on 1)

The heating apparatus of claim 1, wherein a magnesium source in raw materials used for producing said ceramic material comprises MgO.

### Claim 10 (depends on 1)

The heating apparatus of claim 1, wherein said ceramic material has an open porosity of 0.12% or lower.