# US 9,437,462 B2 · Underfill material and method for manufacturing semiconductor device by using the same

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- Number: US 9,437,462 B2
- Document ID: US9437462B2
- Status: Granted
- Kind: B2
- Application number: 14/547,660
- Filed: 2014-11-19
- Published: 2015-03-19
- Granted: 2016-09-06
- Earliest claimed: 2012-02-24
- Assignees: Dexerials Corporation
- Applicants: Dexerials Corporation
- Inventors: Taichi Koyama
- Web page: https://patentgrep.com/patent/US9437462B2

## CPC

- H10W 74/012: {of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills}
- C08G 59/42: Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
- C08L 29/02: Homopolymers or copolymers of unsaturated alcohols (C08L29/14 takes precedence)
- C08L 29/14: Homopolymers or copolymers of acetals or ketals obtained by polymerisation of unsaturated acetals or ketals or by after-treatment of polymers of unsaturated alcohols
- C08L 33/08: Homopolymers or copolymers of acrylic acid esters
- C08L 33/10: Homopolymers or copolymers of methacrylic acid esters
- C08L 53/00: Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
- C08L 63/00: Compositions of epoxy resins; Compositions of derivatives of epoxy resins
- C08L 67/02: Polyesters derived from dicarboxylic acids and dihydroxy compounds (C08L67/06 takes precedence)
- C08L 75/04: Polyurethanes
- C08L 75/06: from polyesters
- C08L 75/08: from polyethers
- H10W 74/01: Manufacture or treatment
- H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills
- H10W 74/47: comprising organic materials, e.g. plastics or resins
- C08G 2261/126: block
- H10W 72/016: {of strap connectors}
- H10W 72/07236: {Soldering or alloying}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- C08G: MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08L: COMPOSITIONS OF MACROMOLECULAR COMPOUNDS (compositions based on polymerisable monomers C08F, C08G; artificial filaments or fibres D01F; textile treating compositions D06)

## Abstract

A method for manufacturing a semiconductor device by using underfill material includes: a semiconductor chip mounting step configured to mount a semiconductor chip having a solder bump on a substrate via an underfill film including a film forming resin having a weight average molecular weight of not more than 30000 g/mol and a molecular weight distribution of not more than 2.0, an epoxy resin, and an epoxy curing agent; and a reflow step configured to solder-bond the semiconductor chip and the substrate by a reflow furnace. The film forming resin of the underfill material has a weight average molecular weight of not more than 30000 g/mol and a molecular weight distribution of not more than 2.0, and accordingly, the viscosity at the time of heat melting can be reduced, and a semiconductor chip can be mounted at a low pressure.

## Claims

### Claim 1

A method of manufacturing a semiconductor device comprising:
a semiconductor chip mounting step configured to mount a semiconductor chip having a solder bump on a substrate via an underfill film including a film forming resin having a weight average molecular weight of not more than 30000 g/mol and a molecular weight distribution of not more than 2.0, an epoxy resin, and an epoxy curing agent, wherein the film forming resin is a tri-block copolymer of p-hydroxystyrene and ethyl vinyl ether; and
a reflow step configured to solder-bond the above-mentioned semiconductor chip and the above-mentioned substrate by a reflow furnace.

### Claim 2

An underfill material, comprising:
a film forming resin having a weight average molecular weight of not more than 30000 g/mol, and a molecular weight distribution of not more than 2.0;
an epoxy resin; and
an epoxy curing agent;
wherein the film forming resin is a tri-block copolymer of p-hydroxystyrene and ethyl vinyl ether.

### Claim 3 (depends on 2)

The underfill material according to claim 2, wherein the epoxy curing agent is an acid anhydride.

### Claim 4 (depends on 2)

The underfill material according to claim 2, wherein
a composition ratio of the p-hydroxystyrene to the ethyl vinyl ether (p-hydroxystyrene/ethyl vinyl ether) is not less than 20/80 and not more than 70/30, and
not less than 15 parts by mass and not more than 90 parts by mass of the epoxy curing agent with respect to 100 parts by mass of epoxy resin are blended.

### Claim 5 (depends on 2)

The underfill material according to claim 2, wherein
a composition ratio of the p-hydroxystyrene to the ethyl vinyl ether (p-hydroxystyrene/ethyl vinyl ether) is not less than 30/70 and not more than 50/50, and
not less than 40 parts by mass and not more than 70 parts by mass of the epoxy curing agent with respect to 100 parts by mass of epoxy resin are blended.