# US 9,437,455 B2 · Manufacturing method for semiconductor device

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- Number: US 9,437,455 B2
- Document ID: US9437455B2
- Status: Granted
- Kind: B2
- Application number: 14/151,378
- Filed: 2014-01-09
- Published: 2014-07-17
- Granted: 2016-09-06
- Earliest claimed: 2013-01-11
- Assignees: Toyota Jidosha Kabushiki Kaisha
- Applicants: Norihiro Togawa
- Inventors: Norihiro Togawa
- Web page: https://patentgrep.com/patent/US9437455B2

## CPC

- H10P 95/90: Thermal treatments, e.g. annealing or sintering
- H10P 30/2042: {into crystalline silicon carbide}
- H10P 30/21: {of electrically active species}
- H10D 62/8325: {Silicon carbide}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A manufacturing method for a semiconductor device includes introducing an impurity into a SiC substrate, forming a mixed material layer, which is made from a resin and a fibrous carbon material, on a surface of the SiC material into which the impurity is introduced, performing heat treatment of the SiC substrate in which the mixed material layer is formed on the surface of the SiC substrate, and removing the mixed material layer after the heat treatment.

## Claims

### Claim 1

A manufacturing method for a semiconductor device, comprising:
introducing an impurity into a SiC substrate;
forming a mixed material layer directly on a surface of the SiC substrate into which the impurity is introduced, the mixed material layer is formed before the impurity introduced into the SiC substrate is activated, the mixed material layer is made of a resin and a fibrous carbon material;
performing heat treatment of the SiC substrate in which the mixed material layer is formed on the surface of the SiC substrate; and
removing the mixed material layer after the heat treatment.

### Claim 2 (depends on 1)

The manufacturing method for the semiconductor device according to claim 1, wherein
the forming the mixed material layer includes forming a resin layer on the surface of the SiC substrate, and introducing the fibrous carbon material into the formed resin layer.

### Claim 3 (depends on 1)

The manufacturing method for the semiconductor device according to claim 1, wherein
the forming the mixed material layer is performed by applying a mixed material, in which the resin and the fibrous carbon material are mixed, on the surface of the SiC substrate.

### Claim 4

A manufacturing method for a semiconductor device, comprising:
introducing an impurity into a SiC substrate;
forming a mixed material layer on a surface of the SiC substrate into which the impurity is introduced, the mixed material layer is made of a resin and a fibrous carbon material;
performing heat treatment of the SiC substrate in which the mixed material layer is formed on the surface of the SiC substrate; and
removing the entire mixed material layer after the heat treatment.

### Claim 5 (depends on 4)

The manufacturing method for the semiconductor device according to claim 4, wherein
the forming the mixed material layer includes forming a resin layer on the surface of the SiC substrate, and introducing the fibrous carbon material into the formed resin layer.

### Claim 6 (depends on 4)

The manufacturing method for the semiconductor device according to claim 4, wherein
the forming the mixed material layer is performed by applying a mixed material, in which the resin and the fibrous carbon material are mixed, on the surface of the SiC substrate.