# US 9,437,446 B2 · Slurry for chemical mechanical polishing and chemical mechanical polishing method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,437,446 B2 - Document ID: US9437446B2 - Status: Granted - Kind: B2 - Application number: 14/404,528 - Filed: 2013-05-27 - Published: 2015-05-28 - Granted: 2016-09-06 - Earliest claimed: 2012-05-30 - Assignees: Kuraray Co., Ltd. - Applicants: Kuraray Co., Ltd. - Inventors: Mitsuru Kato; Chihiro Okamoto; Shinya Kato - Web page: https://patentgrep.com/patent/US9437446B2 ## CPC - H10P 95/064: {the removal being chemical etching} - B24B 37/24: characterised by the composition or properties of the pad materials - C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} - C09K 3/1409: {Abrasive particles per se (preparation of diamond C01B32/25)} - H10P 95/062: {involving a dielectric removal step} - H10W 10/011: {of isolation regions comprising dielectric materials} - H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations} - H10W 10/10: Isolation regions comprising dielectric materials - H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS - C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES - C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract The present invention provides a slurry for chemical mechanical polishing, containing abrasive grain (a), compound (b) having an amino group having a pKa of more than 9, and not less than 3 hydroxyl groups, and water. ## Claims ### Claim 1 A slurry for chemical mechanical polishing, comprising abrasive grain (a), compound (b) comprising an amino group having a pKa of more than 9, and not less than 3 hydroxyl groups, and water. ### Claim 2 (depends on 1) The slurry according to claim 1, wherein a concentration of the abrasive grain (a) is 0.1-20 mass %, and a concentration of the compound (b) is 0.001-1 mass %. ### Claim 3 (depends on 1) The slurry according to claim 1, wherein the abrasive grain (a) is at least one selected from the group consisting of cerium oxide, manganese oxide, iron oxide, titanium oxide, magnesium oxide, zirconium oxide and tantalum oxide. ### Claim 4 (depends on 1) The slurry according to claim 1, wherein the pKa of the amino group of the compound (b) is 9.2-10.5. ### Claim 5 (depends on 1) The slurry according to claim 1, wherein the compound (b) comprises one amino group. ### Claim 6 (depends on 1) The slurry according to claim 1, wherein the compound (b) has a molecular weight of 100-1000. ### Claim 7 (depends on 1) The slurry according to claim 1, wherein the compound (b) is glucamine and/or a derivative thereof. ### Claim 8 (depends on 1) The slurry according to claim 1, further comprising a water-soluble polymer (c) at a concentration of 0.001-5 mass %. ### Claim 9 (depends on 8) The slurry according to claim 8, wherein the water-soluble polymer (c) is an anionic polymer and/or a non-ionic polymer. ### Claim 10 (depends on 8) The slurry according to claim 8, wherein the water-soluble polymer (c) is at least one selected from the group consisting of a water-soluble polymer (c1) obtained by polymerizing 25-100 mass % of at least one monomer selected from the group consisting of (meth)acrylic acid, maleic acid, itaconic acid and vinylpyrrolidone, and 75-0 mass % of other monomer comprising an unsaturated double bond; a water-soluble polymer (c2) obtained by polymerizing 50-100 mass % of a monomer that forms a vinyl alcohol skeleton by hydrolysis and 50-0 mass % of other monomer comprising an unsaturated double bond, which is followed by hydrolysis; a water-soluble polysaccharide (c3); a water-soluble polyurethane (c4) comprising a carboxy group and/or a polyoxyethylene group; and a water-soluble derivative thereof (c5). ### Claim 11 (depends on 1) The slurry according to claim 1, further comprising a compound (d) comprising a structure of formula (1) or (2) at a concentration of 0.0001-1 mass % wherein R1, R2 and R3 are each independently an alkylene group comprising 1-6 carbon atoms, R4 is a hydrogen atom or an alkyl group comprising 1-3 carbon atoms, and n is an integer of 0-9. ### Claim 12 (depends on 11) The slurry according to claim 11, wherein the compound (d) is at least one selected from the group consisting of iminodiacetic acid, N-(2-hydroxyethyl)iminodiacetic acid, aspartic acid-N,N-diacetic acid, nitrilotriacetic acid, N-(2-hydroxyethyl)ethylenediamine-N,N′,N′-triacetic acid, ethylenediamine-N,N,N′,N′-tetraacetic acid, propylenediamine-N,N,N′,N′-tetraacetic acid, glycol etherdiamine-N,N,N′,N′-tetraacetic acid, 1,2-diaminocyclohexane-N,N,N′,N′-tetraacetic acid, diethylenetriamine-N,N,N′,N″,N″-pentaacetic acid, triethylenetetramine-N,N,N′,N″,N′″,N′″-hexaacetic acid, 3-hydroxy-2,2′-iminodisuccinic acid and ethylenediamine disuccinic acid. ### Claim 13 (depends on 1) The slurry according to claim 1, having pH of 3-11. ### Claim 14 (depends on 1) A method of chemical mechanical polishing, the method comprising polishing an insulating film by using the slurry according to claim 1. ### Claim 15 (depends on 14) The method according to claim 14, wherein a shallow trench isolation is formed.