# US 9,437,434 B2 · Semiconductor device and fabrication method thereof

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- Number: US 9,437,434 B2
- Document ID: US9437434B2
- Status: Granted
- Kind: B2
- Application number: 14/220,680
- Filed: 2014-03-20
- Published: 2014-07-24
- Granted: 2016-09-06
- Earliest claimed: 2011-10-25
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Ming-Hsi Yeh; Tsung-Chieh Tsai; Chun-Yi Lee
- Web page: https://patentgrep.com/patent/US9437434B2

## CPC

- H10D 64/013: {of electrodes having a conductor capacitively coupled to a semiconductor by an insulator}
- H10D 84/0167: {Manufacturing their channels}
- H10D 84/017: {Manufacturing their source or drain regions, e.g. silicided source or drain regions}
- H10D 84/0172: {Manufacturing their gate conductors}
- H10D 84/0188: {Manufacturing their isolation regions}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/83: of only insulated-gate FETs [IGFET]
- H10D 84/8312: {the IGFETs characterised by having different source or drain region structures, e.g. IGFETs having symmetrical source or drain regions integrated with IGFETs having asymmetrical source or drain regions}
- H10D 84/85: Complementary IGFETs, e.g. CMOS
- H10D 89/10: Integrated device layouts
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device includes an inter-layer dielectric (ILD) layer over a substrate; and a first gate feature in the ILD layer, the first gate feature comprising a first gate material and having a first resistance, wherein the first gate material comprises a first conductive material. The semiconductor device further includes a second gate feature in the ILD layer, the second gate feature comprising a second gate material and having a second resistance higher than the first resistance, wherein the second material comprises at least 50% by volume silicon oxide.

## Claims

### Claim 1

A semiconductor device comprising:
an inter-layer dielectric (ILD) layer over a substrate;
a first gate stack in the ILD layer, the first gate stack comprising a first gate material and having a first resistance, wherein the first gate material comprises a first conductive material;
a second gate stack in the ILD layer and separate from the first gate stack, the second gate stack comprising a second gate material and having a second resistance higher than the first resistance, wherein the second material comprises at least 50% by volume silicon oxide, and the first gate stack is substantially free of the second gate material.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the first gate feature comprises a first gate dielectric layer comprising a first dielectric material, and the second gate feature comprises a second gate dielectric layer comprising the first dielectric material.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the second gate feature is over an isolation feature.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, further comprising a third gate feature in the ILD layer, the third gate feature comprising a third gate material and having a third resistance, wherein the third gate material comprises a second conductive material.

### Claim 5 (depends on 4)

The semiconductor device of claim 4, wherein the second gate feature is between the first gate feature and the third gate feature.

### Claim 6 (depends on 4)

The semiconductor device of claim 4, wherein a work function of the first gate material is different from a work function of the third gate material.

### Claim 7 (depends on 4)

The semiconductor device of claim 4, wherein the first conductive material and the second conductive material independently comprise at least one of aluminum, copper, tungsten, titanium, tantalum, tantalum aluminum, tantalum aluminum nitride, titanium nitride, tantalum nitride, nickel silicide, cobalt silicide, silver, TaC, TaSiN, TaCN, TiAl, TiAlN, or WN.

### Claim 8 (depends on 4)

The semiconductor device of claim 4, wherein the first gate feature is a p-type metal oxide semiconductor (PMOS) transistor, and the third gate feature is an n-type metal oxide semiconductor (NMOS) transistor.

### Claim 9 (depends on 1)

The semiconductor device of claim 1, wherein the first gate feature comprises a first gate dielectric layer comprising a first dielectric material, and the second gate feature comprises a second gate dielectric layer comprising a second dielectric material different from the first dielectric material.

### Claim 10

A semiconductor device comprising:
a first gate electrode over a substrate, the first gate electrode comprising a conductive material;
a dummy gate electrode over the substrate, wherein the dummy gate electrode is on an isolation feature in the substrate, a top surface of the dummy gate electrode is substantially planar with a top surface of the first gate electrode, and the dummy gate electrode has a higher resistance than the first gate electrode, and the dummy gate electrode comprises:
a first portion comprising polysilicon; and
a second portion comprising silicon oxide wherein the second portion is at least 50% by volume of the dummy gate electrode; and
an inter-layer dielectric (ILD) layer between the first gate electrode and the dummy gate electrode.

### Claim 11 (depends on 10)

The semiconductor device of claim 10, further comprising:
a first source feature at least partially in the substrate, the first source feature located adjacent to the first gate electrode; and
a first drain feature at least partially in the substrate, wherein the first gate electrode is between the first source feature and the first drain feature.

### Claim 12 (depends on 11)

The semiconductor device of claim 11, wherein a portion of the first source feature extends above a top surface of the substrate, and a portion of the first drain feature extends above a top surface of the substrate.

### Claim 13 (depends on 11)

The semiconductor device of claim 11, wherein an entirety of the first source feature is in the substrate, and an entirety of the first drain feature is in the substrate.

### Claim 14 (depends on 11)

The semiconductor device of claim 11, wherein the first source feature comprises a strained material, and the first drain feature comprises a strained material.

### Claim 15 (depends on 11)

The semiconductor device of claim 11, further comprising:
a second gate electrode over the substrate, the second gate electrode comprising a conductive material, wherein the dummy gate electrode is between the first gate electrode and the second gate electrode;
a second source feature at least partially in the substrate, the second source feature located adjacent to the second gate electrode; and
a second drain feature at least partially in the substrate, wherein the second gate electrode is between the second source feature and the second drain feature.

### Claim 16 (depends on 15)

The semiconductor device of claim 15, wherein the second source feature is different from the first source feature, and the second drain feature is different from the first drain feature.

### Claim 17

A semiconductor device comprising:
a first gate electrode over a substrate, the first gate electrode comprising a first conductive material;
a second gate electrode over the substrate, the second gate electrode comprising a second conductive material, wherein a top surface of the second gate electrode is substantially planar with a top surface of the first gate electrode;
a dummy gate electrode over the substrate, the dummy gate electrode between the first gate electrode and the second gate electrode, wherein the dummy gate electrode is on an isolation feature in the substrate, and the dummy gate electrode has a higher resistance than the first gate electrode, wherein the dummy gate electrode comprises at least 50% by volume silicon oxide; and
an inter-layer dielectric (ILD) layer between the first gate electrode and the dummy gate electrode, wherein the ILD layer is between the dummy gate electrode and the second gate electrode.

### Claim 18 (depends on 17)

The semiconductor device of claim 17, further comprising:
a first gate dielectric layer between the first gate electrode and the substrate, wherein the first gate dielectric layer comprises a high-k dielectric material;
a second gate dielectric layer between the second gate electrode and the substrate, wherein the second gate dielectric layer comprises the high-k dielectric material; and
a dummy gate dielectric layer between the dummy gate electrode and the substrate, wherein the dummy gate dielectric layer comprises the high-k dielectric material.

### Claim 19 (depends on 17)

The semiconductor device of claim 17, wherein a work function of the first conductive material is different from a work function of the second conductive material.

### Claim 20 (depends on 1)

The semiconductor device of claim 1, wherein a portion of the second material comprises polysilicon.