# US 9,437,429 B2 · Polycrystalline silicon manufacturing apparatus and polycrystalline silicon manufacturing method

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- Number: US 9,437,429 B2
- Document ID: US9437429B2
- Status: Granted
- Kind: B2
- Application number: 14/130,627
- Filed: 2012-09-20
- Published: 2014-05-15
- Granted: 2016-09-06
- Earliest claimed: 2011-09-20
- Assignees: Shin-Etsu Chemical Co., Ltd.
- Applicants: Shin-Etsu Chemical Co., Ltd.
- Inventors: Yasushi Kurosawa; Shigeyoshi Netsu; Naruhiro Hoshino
- Web page: https://patentgrep.com/patent/US9437429B2

## CPC

- H10P 14/3456: {Polycrystalline}
- C01B 33/035: by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
- C23C 16/24: Deposition of silicon only
- C23C 16/4418: {Methods for making free-standing articles (C23C16/01 takes precedence)}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

In order to obtain a polycrystalline silicon rod having an excellent shape, the placement relation between a source gas supplying nozzle 9 and metal electrodes 10 that are provided in a reactor is appropriately designed. The area of a disc-like base plate 5 is S0. An imaginary concentric circle C (radius c) centered at the center of the disc-like base plate 5 has an area S=S0/2. Further, a concentric circle A and a concentric circle B are imaginary concentric circles having the same center as that of the concentric circle C and having a radius a and a radius b, respectively (a<b<c). In the present invention, the electrode pairs 10 are placed inside of the imaginary concentric circle C and outside of the imaginary concentric circle B, and the gas supplying nozzle 9 is placed inside of the imaginary concentric circle A.

## Claims

### Claim 1

A polycrystalline silicon manufacturing apparatus comprising a reactor whose inside is sealed by a bell jar and a disc-like base plate, wherein
the base plate comprises: electrode pairs adapted for holding a plurality of silicon cores and applying current to the silicon cores; and at least one gas supplying nozzle adapted for supplying a source gas to a space inside of the bell jar,
all of the electrode pairs are located inside of an imaginary concentric circle C having a radius c and outside of an imaginary concentric circle B having a radius b that is smaller than the radius c, the imaginary concentric circles C and B being imaginary concentric circles centered at a center of the base plate, the imaginary concentric circle C having an area S (=S0/2) that is half an area S0 of the disc-like base plate, the imaginary concentric circle B having the same center as that of the concentric circle C,
all of the gas supplying nozzle is located inside of an imaginary concentric circle A having a radius a that is smaller than the radius b, the imaginary concentric circle A having the same center as that of the concentric circle C,
a difference between the radius b and the radius a is in a range of 20 cm to 50 cm, and
one of the gas supplying nozzles is located at the center of the base plate.

### Claim 2 (depends on 1)

The polycrystalline silicon manufacturing apparatus according to claim 1, further comprising a gas flow rate controlling unit adapted to supply the source gas into the bell jar at a given flow rate, wherein
the gas flow rate controlling unit enables the source gas blown out of the gas supplying nozzle to be controlled at a flow speed of 150 m/sec or higher.

### Claim 3 (depends on 2)

A polycrystalline silicon manufacturing method comprising:
disposing the gas supplying nozzle of the polycrystalline silicon manufacturing apparatus according to claim 2 such that a source gas blown out of the gas supplying nozzles does not directly hit against a surface of polycrystalline silicon deposited on the silicon cores; and
depositing polycrystalline silicon.

### Claim 4 (depends on 1)

A polycrystalline silicon manufacturing method comprising:
disposing the gas supplying nozzle of the polycrystalline silicon manufacturing apparatus according to claim 1 such that a source gas blown out of the gas supplying nozzles does not directly hit against a surface of polycrystalline silicon deposited on the silicon cores; and
depositing polycrystalline silicon.

### Claim 5 (depends on 2)

A polycrystalline silicon manufacturing method comprising:
blowing a source gas out of the gas supplying nozzle of the polycrystalline silicon manufacturing apparatus according to claim 2 at a flow speed of 150 m/sec or higher; and
depositing polycrystalline silicon on surfaces of the silicon cores.