# US 9,437,428 B2 · Method of manufacturing a semiconductor device having an oxide semiconductor layer with increased hydrogen concentration > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,437,428 B2 - Document ID: US9437428B2 - Status: Granted - Kind: B2 - Application number: 14/552,064 - Filed: 2014-11-24 - Published: 2015-06-04 - Granted: 2016-09-06 - Earliest claimed: 2013-11-29 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Masashi Oota; Noritaka Ishihara; Motoki Nakashima; Yoichi Kurosawa; Shunpei Yamazaki; Yasuharu Hosaka; Toshimitsu Obonai; Junichi Koezuka - Web page: https://patentgrep.com/patent/US9437428B2 ## CPC - H10D 86/0221: {comprising manufacture, treatment or patterning of TFT semiconductor bodies} - H10D 1/47: Resistors having no potential barriers - H10D 1/692: {Electrodes} - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10D 30/6756: {Amorphous oxide semiconductors} - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors} - H10D 86/60: wherein the TFTs are in active matrices - H10D 99/00: Subject matter not provided for in other groups of this subclass - H10P 14/22: using physical deposition, e.g. vacuum deposition or sputtering - H10P 14/24: using chemical vapour deposition [CVD] - H10P 14/2921: {being crystalline insulating materials} - H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers} - H10P 14/3426: {Oxides} - H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)} - H10P 30/202: {characterised by the semiconductor materials} - H10P 30/208: {of electrically inactive species} - H10P 30/21: {of electrically active species} - H10P 95/90: Thermal treatments, e.g. annealing or sintering - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed. ## Claims ### Claim 1 A method for manufacturing a semiconductor device, comprising the steps of: forming an oxide semiconductor film over a first insulating film; performing a first heat treatment in a vacuum atmosphere where oxygen in the oxide semiconductor film is released; performing a second heat treatment in a hydrogen-containing atmosphere to form an oxide semiconductor film having conductivity after the first heat treatment, and wherein a hydrogen concentration in the oxide semiconductor film having conductivity is increased to higher than or equal to 5×1020 atoms/cm3. ### Claim 2 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the first heat treatment is performed at a temperature higher than or equal to 350° C. and lower than or equal to 800° C., and wherein the first heat treatment is performed in the vacuum atmosphere with a pressure greater than or equal to 1×10−7 Pa and less than or equal to 10 Pa. ### Claim 3 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein a resistivity of the oxide semiconductor film having conductivity is greater than or equal to 1×10−3 Ωcm and less than 1×104 Ωcm. ### Claim 4 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the oxide semiconductor film having conductivity includes a crystal part, and an angle formed between a c-axis of the crystal part and a normal vector of a surface over which the oxide semiconductor film is formed is greater than or equal to −30° and less than or equal to 30°. ### Claim 5 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the oxide semiconductor film having conductivity includes at least one of an In-Ga oxide, an In-Zn oxide, and an In-M-Zn oxide (M is Al, Ga, Y, Zr, Sn, La, Ce, or Nd). ### Claim 6 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device includes a resistor, and wherein the resistor includes the oxide semiconductor film having conductivity. ### Claim 7 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device includes a capacitor, and wherein the capacitor includes the oxide semiconductor film having conductivity. ### Claim 8 A method for manufacturing a semiconductor device, comprising the steps of: forming an oxide semiconductor film over a first insulating film; adding a rare gas to the oxide semiconductor film by a doping method or an ion implantation method; performing a heat treatment in a hydrogen-containing atmosphere to form an oxide semiconductor film having conductivity, and wherein a hydrogen concentration in the oxide semiconductor film having conductivity is increased to higher than or equal to 5×1020 atoms/cm3. ### Claim 9 (depends on 8) The method for manufacturing a semiconductor device according to claim 8, wherein the rare gas is at least one of helium, neon, argon, krypton, and xenon. ### Claim 10 (depends on 8) The method for manufacturing a semiconductor device according to claim 8, wherein a resistivity of the oxide semiconductor film having conductivity is greater than or equal to 1×10−3 Ωcm and less than 1×104 Ωcm. ### Claim 11 (depends on 8) The method for manufacturing a semiconductor device according to claim 8, wherein the oxide semiconductor film having conductivity includes a crystal part, and an angle formed between a c-axis of the crystal part and a normal vector of a surface over which the oxide semiconductor film is formed is greater than or equal to −30° and less than or equal to 30°. ### Claim 12 (depends on 8) The method for manufacturing a semiconductor device according to claim 8, wherein the oxide semiconductor film having conductivity includes at least one of an In-Ga oxide, an In-Zn oxide, and an In-M-Zn oxide (M is Al, Ga, Y, Zr, Sn, La, Ce, or Nd). ### Claim 13 (depends on 8) The method for manufacturing a semiconductor device according to claim 8, wherein the semiconductor device includes a resistor, and wherein the resistor includes the oxide semiconductor film having conductivity. ### Claim 14 (depends on 8) The method for manufacturing a semiconductor device according to claim 8, wherein the semiconductor device includes a capacitor, and wherein the capacitor includes the oxide semiconductor film having conductivity.