# US 9,437,426 B2 · Method of manufacturing semiconductor device

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- Number: US 9,437,426 B2
- Document ID: US9437426B2
- Status: Granted
- Kind: B2
- Application number: 14/227,360
- Filed: 2014-03-27
- Published: 2014-10-02
- Granted: 2016-09-06
- Earliest claimed: 2013-03-28
- Assignees: Hitachi Kokusai Electric Inc.
- Applicants: Hitachi Kokusai Electric Inc.
- Inventors: Naoharu Nakaiso; Kazuhiro Yuasa; Yuki Kitahara
- Web page: https://patentgrep.com/patent/US9437426B2

## CPC

- H10P 14/3411: {Silicon, silicon germanium or germanium}
- C23C 16/24: Deposition of silicon only
- C23C 16/45523: {Pulsed gas flow or change of composition over time}
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/3444: {P-type}
- H10P 14/416: {of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A method of manufacturing a semiconductor device including: a process of transferring a substrate into a processing chamber; a first gas supplying process of supplying a B atom-containing gas into the processing chamber; a first purging process of purging an inside of the processing chamber under an atmosphere of the B atom-containing gas supplied in the first gas supplying process; a second gas supplying process of supplying an Si atom-containing gas into the processing chamber to form a non-doped Si film on the substrate, after the first purging process; and a second purging process of purging the inside of the processing chamber under an atmosphere of the Si atom-containing gas.

## Claims

### Claim 1

A method of manufacturing a semiconductor device, comprising:
a process of transferring a substrate into a processing chamber;
a first gas supplying process of supplying a boron-containing gas into the processing chamber to boron-terminate on the surface of the substrate;
a first purging process of purging an inside of the processing chamber under an atmosphere of the boron-containing gas supplied in the first gas supplying process;
a second gas supplying process of supplying a silicon-containing gas into the processing chamber to form a boron-inhibited Si film having a boron concentration of 3.0×1020 atom/cm3 or less on the substrate, after the first purging process; and
a second purging process of purging the inside of the processing chamber under an atmosphere of the silicon-containing gas.

### Claim 2 (depends on 1)

The method according to claim 1, wherein a supply flow rate of the boron-containing gas supplied into the processing chamber in the first gas supplying process is 5 to 30 sccm.

### Claim 3 (depends on 2)

The method according to claim 2, wherein a supply time of the boron-containing gas supplied into the processing chamber in the first gas supplying process is 10 to 300 seconds.

### Claim 4 (depends on 2)

The method according to claim 2, wherein the boron-containing gas is BCl3.

### Claim 5 (depends on 1)

The method according to claim 1, wherein the substrate is processed at a temperature lower than 400° C.

### Claim 6 (depends on 5)

The method according to claim 5, wherein a pressure in the processing chamber is maintained in a range of 30 to 300 Pa.

### Claim 7 (depends on 1)

The method according to claim 1, wherein a pressure in the processing chamber is maintained in a range of 30 to 300 Pa.

### Claim 8

A method of processing a substrate, comprising:
a process of transferring a substrate into a processing chamber;
a first gas supplying process of supplying a boron-containing gas into the processing chamber to boron-terminate on the surface of the substrate;
a first purging process of purging an inside of the processing chamber under an atmosphere of the boron-containing gas supplied in the first gas supplying process;
a second gas supplying process of supplying a silicon-containing gas into the processing chamber to form a boron-inhibited Si film having a boron concentration of 3.0×1020 atom/cm3 or less on the substrate, after the first purging process; and
a second purging process of purging the inside of the processing chamber under an atmosphere of the silicon-containing gas.