# US 9,437,397 B2 · Textured silicon liners in substrate processing systems > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,437,397 B2 - Document ID: US9437397B2 - Status: Granted - Kind: B2 - Application number: 13/928,815 - Filed: 2013-06-27 - Published: 2015-01-01 - Granted: 2016-09-06 - Earliest claimed: 2013-06-27 - Assignees: Varian Semiconductor Equipment Associates, Inc. - Applicants: Varian Semiconductor Equipment Associates, Inc. - Inventors: Julian Blake - Web page: https://patentgrep.com/patent/US9437397B2 ## CPC - H01J 37/3244: {Gas supply means} - C23C 14/22: characterised by the process of coating - C23C 14/564: {Means for minimising impurities in the coating chamber such as dust, moisture, residual gases} - C23C 16/4404: {Coatings or surface treatment on the inside of the reaction chamber or on parts thereof} - C23C 16/50: using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} - H01J 37/3171: {for ion implantation} - H01J 37/32477: {characterised by the means for protecting vessels or internal parts, e.g. coatings} - H01J 2237/0213: Avoiding deleterious effects due to interactions between particles and tube elements - H01J 2237/022: Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube - H01J 2237/028: Particle traps - H01J 2237/0473: accelerating - H01J 2237/0475: decelerating - H01J 2237/057: Energy or mass filtering - H01J 2237/1207: Einzel lenses - H01J 2237/3321: CVD [Chemical Vapor Deposition] - H01J 2237/334: Etching - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract Substrate processing systems, such as ion implantation systems, deposition systems and etch systems, having textured silicon liners are disclosed. The silicon liners are textured using a chemical treatment that produces small features, referred to as micropyramids, which may be less than 20 micrometers in height. Despite the fact that these micropyramids are much smaller than the textured features commonly found in graphite liners, the textured silicon is able to hold deposited coatings and resist flaking. Methods for performing preventative maintenance on these substrate processing systems are also disclosed. ## Claims ### Claim 1 An ion implantation system, comprising: an ion source; a process chamber in which a substrate is disposed; and a silicon liner, disposed within said system, where a surface of said silicon liner is textured, wherein said textured surface of said silicon liner comprises micropyramids having a height of less than 20 micrometers. ### Claim 2 (depends on 1) The ion implantation system of claim 1, wherein said silicon liner is disposed in a region of said system that is exposed to heavy ion beam strike. ### Claim 3 (depends on 1) The ion implantation system of claim 1, further comprising a guide tube positioned within a mass analyzer, wherein said silicon liner is disposed within the guide tube of said mass analyzer. ### Claim 4 (depends on 3) The ion implantation system of claim 3, further comprising a resolving aperture disposed proximate an output of said mass analyzer, wherein said silicon liner is disposed on said resolving aperture. ### Claim 5 (depends on 1) The ion implantation system of claim 1, further comprising a focusing element, wherein said silicon liner is disposed on said focusing element. ### Claim 6 (depends on 5) The ion implantation system of claim 5, wherein said focusing element comprises a quadrupole or Einsel lens. ### Claim 7 (depends on 1) The ion implantation system of claim 1, further comprising an acceleration or deceleration electrode assembly disposed proximate said process chamber, wherein said silicon liner is disposed on said acceleration or deceleration electrode assembly. ### Claim 8 (depends on 1) The ion implantation system of claim 1, wherein said silicon liner is disposed on an electrically biased surface, wherein said silicon liner is doped so as to reduce its bulk resistivity. ### Claim 9 (depends on 1) The ion implantation system of claim 1, wherein said textured surface of said silicon liner comprises a chemically treated surface. ### Claim 10 (depends on 1) The ion implantation system of claim 1, wherein the silicon liner is textured by treating the surface with a hydroxide. ### Claim 11 (depends on 10) The ion implantation system of claim 10, wherein the hydroxide is one of sodium hydroxide or barium hydroxide. ### Claim 12 A beamline ion implantation system, comprising: an ion source; an electrode disposed outside said ion source to attract ions generated within said ion source to form an ion beam; a mass analyzer through which said ion beam passes; a resolving aperture at an output of said mass analyzer to allow ions of a desired charge/mass ratio to pass; a focusing element in a path of said ion beam to focus said ion beam; a process chamber in which a substrate is disposed; and a silicon liner disposed on a shield around said resolving aperture or on said focusing element, wherein a surface of said silicon liner facing said ion beam is chemically textured, such that said textured surface comprises micropyramids having a height of less than 20 micrometers. ### Claim 13 (depends on 12) The beamline ion implantation system of claim 12, wherein said focusing element comprises a quadrupole or Einsel lens. ### Claim 14 (depends on 12) The beamline ion implantation system of claim 12, wherein said micropyramids vary in height. ### Claim 15 (depends on 12) The beamline ion implantation system of claim 12, wherein spacing between said micropyramids varies. ### Claim 16 (depends on 12) The beamline ion implantation system of claim 12, wherein the silicon liner is textured by treating the surface with a hydroxide. ### Claim 17 (depends on 16) The beamline ion implantation system of claim 16, wherein the hydroxide is one of sodium hydroxide or barium hydroxide.