# US 9,437,392 B2 · High-throughput ion implanter

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- Number: US 9,437,392 B2
- Document ID: US9437392B2
- Status: Granted
- Kind: B2
- Application number: 13/662,110
- Filed: 2012-10-26
- Published: 2013-05-02
- Granted: 2016-09-06
- Earliest claimed: 2011-11-02
- Assignees: Varian Semiconductor Equipment Associates, Inc.
- Applicants: Varian Semiconductor Equipment Associates, Inc.
- Inventors: William T. Weaver; Charles T. Carlson; Joseph C. Olson; James Buonodono; Paul Sullivan
- Web page: https://patentgrep.com/patent/US9437392B2

## CPC

- H01J 37/20: Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
- H01J 37/3023: {Program control}
- H01J 37/3171: {for ion implantation}
- H10F 71/00: Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00)
- H10F 71/121: {The active layers comprising only Group IV materials}
- H10F 71/134: {Irradiation with electromagnetic or particle radiation}
- H10P 30/22: using masks
- H10P 72/0471: {comprising at least one ion or electron beam chamber}
- H01J 2237/024: Moving components not otherwise provided for
- H01J 2237/31711: using mask
- Y02E 10/547: Monocrystalline silicon PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

One embodiment of this ion implanter includes an ion source and a process chamber. This process chamber is connected to the ion source and separated from the ion source by a plurality of extraction electrodes. A carrier holds multiple workpieces. A mask loader in the process chamber connects a mask to the carrier. A transfer chamber and load lock may be connected to the process chamber. The ion implanter is configured to perform either blanket or selective implantation of the workpieces.

## Claims

### Claim 1

An ion implanter comprising:
an ion source;
a process chamber connected to said ion source and separated from said ion source by a plurality of extraction electrodes;
a carrier configured to hold a plurality of workpieces and to be removably attachable to a scan robot;
the scan robot configured to transport said carrier through an ion beam directed from said ion source; and
a mask loader in said process chamber, wherein said mask loader is configured to connect a mask to said carrier while said carrier is disposed on said scan robot, wherein said mask has dimensions large enough to cover said plurality of workpieces.

### Claim 2 (depends on 1)

The ion implanter of claim 1, wherein said ion source comprises an RF ion source.

### Claim 3 (depends on 1)

The ion implanter of claim 1, wherein said mask is magnetically fastened to said carrier.

### Claim 4 (depends on 1)

The ion implanter of claim 1, wherein said mask is mechanically fastened to said carrier.

### Claim 5 (depends on 1)

The ion implanter of claim 1, wherein said scan robot has a horizontal load position and a vertical implant position that are perpendicular to one another, and said scan robot is configured to rotate said carrier from said horizontal load position to said vertical implant position so said plurality of workpieces are in a path of said ion beam.

### Claim 6 (depends on 1)

The ion implanter of claim 1, wherein said plurality of workpieces are directly downstream of said extraction electrodes.

### Claim 7 (depends on 1)

The ion implanter of claim 1, wherein an ion beam is projected in a straight line from said ion source toward said plurality of workpieces.

### Claim 8

An ion implanter comprising:
an ion source;
a process chamber connected to said ion source and separated from said ion source by a plurality of extraction electrodes;
a carrier configured to hold a plurality of workpieces and to be removably attachable to a scan robot;
the scan robot configured to transport said carrier holding said plurality of workpieces through an ion beam directed from said ion source;
a mask loader in said process chamber, wherein said mask loader is configured to connect a mask to said carrier while said carrier is disposed on said scan robot;
a transfer chamber connected to said process chamber;
a load lock connected to said transfer chamber;
a transfer robot in said transfer chamber configured to load said plurality of workpieces on said carrier and to transport said plurality of workpieces between said load lock and said process chamber; and
a workpiece transport system connected to said load lock and configured to load and unload said plurality of workpieces from said load lock, wherein said mask has dimensions large enough to cover said plurality of workpieces.

### Claim 9 (depends on 8)

The ion implanter of claim 8, wherein said ion source comprises an RF ion source.

### Claim 10 (depends on 8)

The ion implanter of claim 8, wherein said mask is magnetically fastened to said carrier.

### Claim 11 (depends on 8)

The ion implanter of claim 8, wherein said mask is mechanically fastened to said carrier.

### Claim 12 (depends on 8)

The ion implanter of claim 8, wherein said scan robot has a horizontal load position and a vertical implant position that are perpendicular to one another, and wherein said scan robot is configured to rotate said carrier from said horizontal load position to said vertical implant position so said plurality of workpieces are in a path of said ion beam.

### Claim 13 (depends on 8)

The ion implanter of claim 8, further comprising a second load lock connected to said transfer chamber.

### Claim 14

An ion implanter comprising:
a first ion source;
a second ion source, wherein one of said ion source and said second ion source generates n-type ions and another of said ion source and said second ion source generates p-type ions;
a first process chamber connected to said ion first source and separated from said first ion source by a plurality of extraction electrodes;
a carrier configured to hold a plurality of workpieces;
a first mask loader in said first process chamber, wherein said first mask loader is configured to connect a mask to said carrier;
a transfer chamber connected to said first process chamber;
a load lock connected to said transfer chamber;
a transfer robot in said transfer chamber configured to transport said plurality of workpieces between said load lock and said first process chamber;
a second process chamber connected to said transfer chamber and said second ion source, wherein said second process chamber is separated from said second ion source by a second plurality of extraction electrodes;
a second mask loader in said second process chamber, wherein said second mask loader is configured to connect a second mask to said carrier; and
a workpiece transport system connected to said load lock and configured to load and unload said plurality of workpieces from said load lock.

### Claim 15 (depends on 14)

The ion implanter of claim 14, further comprising a second transfer chamber connected to said process chamber and said second process chamber.

### Claim 16 (depends on 8)

The ion implanter of claim 8, wherein said plurality of workpieces are directly downstream of said extraction electrodes.

### Claim 17 (depends on 8)

The ion implanter of claim 8, wherein an ion beam is projected in a straight line from said ion source toward said plurality of workpieces.