# US 9,437,358 B2 · Soft magnetic exchange-coupled composite structure, and high-frequency device component, antenna module, and magnetoresistive device including the soft magnetic exchange-coupled composite structure > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,437,358 B2 - Document ID: US9437358B2 - Status: Granted - Kind: B2 - Application number: 14/146,274 - Filed: 2014-01-02 - Published: 2015-01-22 - Granted: 2016-09-06 - Earliest claimed: 2013-07-19 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Young-min Kang; Kyung-han Ahn; Young-jae Kang; Sang-mock Lee - Web page: https://patentgrep.com/patent/US9437358B2 ## CPC - H01F 10/265: {Magnetic multilayers non exchange-coupled (H01F10/32 takes precedence)} - C22C 29/12: based on oxides - C22C 2202/02: Magnetic - H01F 1/11: in the form of particles {(for magnetic record carriers G11B5/70626)} - H01F 1/344: {Ferrites, e.g. having a cubic spinel structure (X2+O)(Y23+O3), e.g. magnetite Fe3O4} - H01F 1/346: {[X32+,Y23+][(TO4)3] with T= Si, Al, Fe, Ga (H01F10/24 takes precedence)} - H01Q 7/06: with core of ferromagnetic material (H01Q7/02 takes precedence) - Y10T 428/12611: Oxide-containing component - Y10T 428/24975: No layer or component greater than 5 mils thick - Y10T 428/265: 1 mil or less - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - C22C: ALLOYS (treatment of alloys C21D, C22F) - H01Q: ANTENNAS, i.e. RADIO AERIALS (radiators or antennas for microwave heating H05B6/72) - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract A soft magnetic exchange-coupled composite structure, and a high-frequency device component, an antenna module, and a magnetoresistive device including the soft magnetic exchange-coupled composite structure, include a ferrite crystal grain as a main phase and a soft magnetic metal thin film bound to the ferrite crystal grain by interfacial bonding on an atomic scale. A region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes a crystalline soft magnetic metal. ## Claims ### Claim 1 A soft magnetic exchange-coupled composite structure, comprising: a ferrite crystal grain as a main phase, the ferrite crystal grain having a first thin film structure, wherein the ferrite crystal grain is oxygen-deficient; and a soft magnetic metal as an auxiliary phase bonded to the ferrite crystal grain by interfacial bonding on an atomic scale, the soft magnetic metal having a second thin film structure, wherein a region of the soft magnetic metal adjacent to an interface with the ferrite crystal grain includes a crystalline soft magnetic metal, and the crystalline soft magnetic material has a third thin film structure, the third thin film structure being between the first thin film structure and the second thin film structure. ### Claim 2 (depends on 1) The soft magnetic exchange-coupled composite structure of claim 1, wherein the ferrite crystal grain is at least one selected from the group consisting of hexagonal ferrite, spinel ferrite, and garnet ferrite. ### Claim 3 (depends on 1) The soft magnetic exchange-coupled composite structure of claim 1, wherein the soft magnetic metal is at least one selected from the group consisting of iron (Fe), cobalt (Co), nickel (Ni), manganese (Mn), and an alloy thereof. ### Claim 4 (depends on 1) The soft magnetic exchange-coupled composite structure of claim 1, wherein a total thickness of the soft magnetic metal thin film bonded to the ferrite crystal grain by interfacial bonding on the atomic scale is 1 nm or greater. ### Claim 5 (depends on 1) The soft magnetic exchange-coupled composite structure of claim 1, wherein a thickness of the ferrite crystal grain is in a range of about 50 nm to about 500 nm. ### Claim 6 (depends on 1) The soft magnetic exchange-coupled composite structure of claim 1, wherein a total thickness of the soft magnetic metal is 1 nm or greater. ### Claim 7 (depends on 6) The soft magnetic exchange-coupled composite structure of claim 6, wherein a thickness of the soft magnetic metal is in a range of about 1 nm to about 30 nm. ### Claim 8 (depends on 1) The soft magnetic exchange-coupled composite structure of claim 1, further comprising: a capping layer or a passivation layer. ### Claim 9 (depends on 8) The soft magnetic exchange-coupled composite structure of claim 8, wherein the capping layer includes at least one selected from the group consisting of tantalum (Ta), chromium (Cr), titanium (Ti), nickel (Ni), tungsten (W), ruthenium (Ru), palladium (Pd), platinum (Pt), zirconium (Zr), hafnium (Hf), silver (Ag), gold (Au), aluminum (Al), antimony (Sb), molybdenum (Mo), cobalt (Co), and tellurium (Te). ### Claim 10 (depends on 8) The soft magnetic exchange-coupled composite structure of claim 8, wherein the passivation layer includes at least one selected from the group consisting of aluminum oxide (Al2O3), magnesium oxide (MgO), titanium (Ti), aluminum (Al), and tantalum (Ta). ### Claim 11 (depends on 1) The soft magnetic exchange-coupled composite structure of claim 1, wherein the ferrite crystal grain has an M-type hexagonal ferrite crystal grain thin film structure, and the soft magnetic metal includes a Fe thin film or Fe-alloy thin film. ### Claim 12 (depends on 11) The soft magnetic exchange-coupled composite structure of claim 11, wherein a total thickness of the Fe or Fe-alloy thin films is 1 nm or greater. ### Claim 13 (depends on 11) The soft magnetic exchange-coupled composite structure of claim 11, wherein a thickness of the M-type hexagonal ferrite crystal grain thin film is in a range of about 60 nm to about 100 nm, and a thickness of the Fe or Fe-alloy thin films is in a range of about 2 nm to about 20 nm. ### Claim 14 (depends on 11) The soft magnetic exchange-coupled composite structure of claim 11, wherein the M-type hexagonal ferrite crystal grain thin film includes SrFe12O19. ### Claim 15 (depends on 11) The soft magnetic exchange-coupled composite structure of claim 11, further comprising: a capping layer having at least one selected from the group consisting of tantalum (Ta), chromium (Cr), titanium (Ti), nickel (Ni), tungsten (W), ruthenium (Ru), palladium (Pd), platinum (Pt), zirconium (Zr), hafnium (Hf), silver (Ag), gold (Au), aluminum (Al), antimony (Sb), molybdenum (Mo), cobalt (Co), and tellurium (Te). ### Claim 16 (depends on 1) A high-frequency device component, comprising: the soft magnetic exchange-coupled composite structure according to claim 1. ### Claim 17 (depends on 1) An antenna module, comprising: the soft magnetic exchange-coupled composite structure according to claim 1. ### Claim 18 (depends on 1) A magnetoresistive device, comprising: the soft magnetic exchange-coupled composite structure according to claim 1. ### Claim 19 (depends on 1) The soft magnetic exchange-coupled composite structure of claim 1, wherein the third thin film structure has a thickness in a range of about 2 nm to about 20 nm, and the second thin film structure has a thickness in a range of about 1 nm to about 30 nm.