# US 9,437,295 B2 · Semiconductor system including semiconductor memory apparatus and temperature control method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,437,295 B2 - Document ID: US9437295B2 - Status: Granted - Kind: B2 - Application number: 14/956,823 - Filed: 2015-12-02 - Published: 2016-03-24 - Granted: 2016-09-06 - Earliest claimed: 2013-10-22 - Assignees: SK hynix Inc. - Applicants: SK hynix Inc. - Inventors: Seung Yun Lee; Hae Chan Park; Myoung Sub Kim; Se Ho Lee - Web page: https://patentgrep.com/patent/US9437295B2 ## CPC - G11C 13/004: {Reading or sensing circuits or methods} - G11C 7/04: with means for avoiding disturbances due to temperature effects - G11C 13/0004: {comprising amorphous/crystalline phase transition cells} - G11C 13/0033: {Disturbance prevention or evaluation; Refreshing of disturbed memory data} - G11C 13/0038: {Power supply circuits} - G11C 2013/008: {Write by generating heat in the surroundings of the memory material, e.g. thermowrite} - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract A semiconductor memory apparatus and a temperature control method thereof are provided. The semiconductor memory apparatus includes a temperature adjustment unit suitable for adjusting a temperature of a memory cell, and a temperature control unit suitable for sensing a temperature of the temperature adjustment unit, comparing a sensed temperature with a reference temperature range, and controlling the temperature adjustment unit to adjust the temperature thereof within the reference temperature range based on a comparison result. ## Claims ### Claim 1 A semiconductor system, comprising: a memory device including a semiconductor substrate and a memory cell formed on the substrate; a control block for controlling the memory device; a temperature adjustment unit suitable for adjusting a temperature of the memory cell and formed over the memory cell; and a temperature control unit suitable for sensing a temperature of the temperature adjustment unit, comparing a sensed temperature with a reference temperature range, and controlling the temperature adjustment unit to adjust the temperature thereof within the reference temperature range based on a comparison result, and formed in the control block. ### Claim 2 (depends on 1) The semiconductor system of claim 1, wherein the temperature adjustment unit includes a memory cell being same with the memory cell of the memory device and a temperature adjustment unit being same with the memory device. ### Claim 3 (depends on 1) The semiconductor system of claim 1, wherein the memory cell includes: a word line region formed on the semiconductor substrate; a switching device formed on the word line region; a data storage region formed on the switching device; and a bit line formed on the data storage region. ### Claim 4 (depends on 3) The semiconductor system of claim 3, further comprising: a buffer layer formed on the bit line; and a metal line formed over the buffer layer and electrically connected to the temperature control unit; wherein the temperature adjustment unit is formed between the buffer layer and the metal line, the temperature adjustment unit receive a current for adjusting the temperature of the memory cell from the metal line. ### Claim 5 (depends on 1) The semiconductor system of claim 1, wherein the temperature adjustment unit includes a material of which a resistance value is reduced when a temperature thereof is increased or a material of which a resistance value is increased when the temperature thereof is increased. ### Claim 6 (depends on 3) The semiconductor system of claim 3, wherein the data storage region includes: a bottom electrode formed on the switching device; a data storage unit formed on the bottom electrode; and a top electrode formed on the data storage unit. ### Claim 7 (depends on 6) The semiconductor system of claim 6, wherein the data storage unit is formed of a phase-change material. ### Claim 8 (depends on 1) The semiconductor system of claim 1, wherein the memory device and the control block are formed in one chip. ### Claim 9 (depends on 1) The semiconductor system of claim 1, wherein the memory device and the control block are formed in different chips. ### Claim 10 The semiconductor system of claim wherein the temperature control unit includes: a temperature sensing unit suitable for sensing the temperature of the temperature adjustment unit; a control unit suitable for receiving the sensed temperature of the temperature sensing unit and generating a control signal to control the temperature of the temperature adjustment unit; and a current supply unit suitable for supplying current to the temperature adjustment unit in response to the control signal, wherein the current is provided to the temperature adjustment unit though a metal line. ### Claim 11 A semiconductor system, comprising: a memory device including a semiconductor substrate and a memory cell formed on the substrate; a control block for controlling the memory device; a temperature adjustment unit suitable for adjusting a temperature of the memory cell; and a temperature control unit suitable for sensing a temperature of the temperature adjustment unit, comparing a sensed temperature with a reference temperature range, and controlling the temperature adjustment unit to adjust the temperature thereof within the reference temperature range based on a comparison result, and formed in the control block, wherein the memory device includes: a word line region formed on the semiconductor substrate; a switching device formed on the word line region; a data storage region formed on the switching device; and a bit line formed on the data storage region, and wherein the temperature adjustment unit is formed in rear surface of the semiconductor substrate. ### Claim 12 The semiconductor system of c further comprising: a first buffer layer formed between the rear surface of the semiconductor substrate and the temperature adjustment unit; and a second buffer layer formed on the temperature adjustment unit. ### Claim 13 (depends on 11) The semiconductor system of claim 11, wherein the temperature adjustment unit is electrically connected to the bit line by a via contact. ### Claim 14 (depends on 11) The semiconductor memory apparatus of claim 11, wherein the temperature adjustment unit includes a material of which a resistance value is reduced when a temperature thereof is increased or a material of which a resistance value is increased when the temperature thereof is increased. ### Claim 15 (depends on 11) The semiconductor memory apparatus of claim 11, wherein the data storage region includes: a bottom electrode formed on the switching device; a data storage unit formed on the bottom electrode; and a top electrode formed on the data storage unit, wherein the data storage unit is formed of a phase-change material. ### Claim 16 (depends on 11) The semiconductor system f claim 11, wherein the temperature control unit includes: a temperature sensing unit suitable for sensing the temperature of the temperature adjustment unit; a control unit suitable for receiving the sensed temperature of the temperature sensing unit and generating a control signal to control the temperature of the temperature adjustment unit; and a current supply unit suitable for supplying current to the temperature adjustment unit in response to the control signal, wherein the current is provided to the temperature adjustment unit through the bit line. ### Claim 17 (depends on 16) The semiconductor memory apparatus of claim 16, wherein the temperature adjustment unit and the temperature sensing unit include a same material of which a resistance value is reduced or increased when a temperature thereof is increased. ### Claim 18 A semiconductor system, comprising: a memory device including a semiconductor substrate, a plurality of memory cells formed on the semiconductor substrate and a temperature adjustment unit for adjusting a temperature of the memory cells; and a control block including a temperature control unit for controlling and verifying the temperature of the memory cells, wherein the temperature control unit includes a temperature sensing unit which includes a memory cell being same with the memory cell of the memory device and a temperature adjust unit being same with the temperature adjust unit of the memory device. ### Claim 19 (depends on 18) The semiconductor system of claim 18, wherein the temperature adjustment unit includes a material of which a resistance value is reduced or increased when a temperature thereof is increased. ### Claim 20 (depends on 19) The semiconductor system of claim 19, wherein the material of the temperature adjustment unit includes a thermistor material.