# US 9,437,289 B2 · Electronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,437,289 B2 - Document ID: US9437289B2 - Status: Granted - Kind: B2 - Application number: 14/219,381 - Filed: 2014-03-19 - Published: 2015-02-19 - Granted: 2016-09-06 - Earliest claimed: 2013-08-14 - Assignees: SK hynix Inc. - Applicants: SK hynix Inc. - Inventors: Byoung-Chan Oh; Yoon-Jae Shin - Web page: https://patentgrep.com/patent/US9437289B2 ## CPC - G11C 13/003: {Cell access} - G11C 7/04: with means for avoiding disturbances due to temperature effects - G11C 11/16: using elements in which the storage effect is based on magnetic spin effect - G11C 11/1655: {Bit-line or column circuits} - G11C 11/1659: {Cell access} - G11C 11/1673: {Reading or sensing circuits or methods} - G11C 11/1675: {Writing or programming circuits or methods} - G11C 11/1697: {Power supply circuits} - G11C 13/0002: {using resistive RAM [RRAM] elements} - G11C 13/0004: {comprising amorphous/crystalline phase transition cells} - G11C 13/0007: {comprising metal oxide memory material, e.g. perovskites} - G11C 13/0026: {Bit-line or column circuits} - G11C 13/0038: {Power supply circuits} - G11C 13/004: {Reading or sensing circuits or methods} - G11C 13/0069: {Writing or programming circuits or methods} - G11C 2213/74: Array wherein each memory cell has more than one access device - G11C 2213/78: Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver - G11C 2213/79: Array wherein the access device being a transistor - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract Provided an electronic device including a semiconductor memory unit. The semiconductor memory unit includes: a plurality of storage cells each including a variable resistance element of which resistance is changed in response to a current flowing across the variable resistance element and a selecting element coupled to one end of the variable resistance element; a plurality of word lines corresponding to the respective storage cells and each coupled to a selecting element of a corresponding storage cell; a first line coupled to one ends of the plurality of storage cells; a second line coupled to the other ends of the plurality of storage cells; a voltage adjuster configured to adjust the voltage levels of back bias voltages of the selecting elements of the plurality of storage cells; and an access control unit electrically coupled to the first and second lines and passing an access current to a selected storage cell among the plurality of storage cells. ## Claims ### Claim 1 An electronic device comprising a semiconductor memory unit which comprises: a plurality of storage cells each comprising a variable resistance element of which resistance value changes with a current flowing across the variable resistance element and a selecting element coupled to one end of the variable resistance element; a plurality of word lines, each coupled to a selecting element of a corresponding storage cell of the plurality of storage cells; a first line coupled to one ends of the plurality of storage cells; a second line coupled to the other ends of the plurality of storage cells; a voltage adjuster configured to adjust the voltage levels of back bias voltages of the selecting elements of the plurality of storage cells in accordance with a temperature change; an access control unit electrically coupled to the first and second lines and providing a write current or a read current to a selected storage cell among the plurality of storage cells; and a word line control unit configured to adjust an activation voltage level applied to the selected word line in accordance with a temperature change, wherein when the decrease in resistance of the variable resistance element according to the increase of temperature is smaller than the sum of the increase in resistance of the selecting element according to the increase of temperature, the increase in resistance of the first line according to the increase of temperature, and the increase in resistance of the second line according to the increase of temperature, the write current and the read current decrease with the increase of temperature. ### Claim 2 (depends on 1) The electronic device of claim 1, wherein when the temperature increases, a switching current corresponding to a minimum current to change a state of the variable resistance element decreases, a resistance value of the variable resistance element decreases, resistance values of the selecting element, the first and second lines increase. ### Claim 3 (depends on 1) The electronic device of claim 1, wherein the voltage adjuster increases the back bias voltage level when the temperature increases during a write operation in case where the decrease of the switching current according to the increase of temperature is smaller than the decrease of the write current according to the increase of temperature, increases the back bias voltage level when the temperature decreases during the write operation in case where the decrease of the switching current according to the increase of temperature is larger than the decrease of the write current according to the decrease of temperature, and maintains the back bias voltage level at a set voltage level during the write operation in case where the decrease of the switching current according to the increase of temperature is equal to the decrease of the write current according to the increase of temperature. ### Claim 4 (depends on 3) The electronic device according to claim 3, wherein the word line control unit increases the activation voltage level when the temperature increases during a write operation in case where a decrease of the switching current according to the increase of temperature is smaller than a decrease of the write current according to the increase of temperature, decreases the activation voltage level when the temperature increase during the write operation in case where the decrease of the switching current according to the increase of temperature is larger than the decrease of the write current according to the decrease of temperature, and maintains the activation voltage level at a set voltage level during the write operation in case where the decrease of the switching current according to the increase of temperature is equal to the decrease of the write current according to the increase of temperature. ### Claim 5 (depends on 4) The electronic device according to claim 4, wherein the voltage adjuster increases the back bias voltage level when the temperature increases during a read operation, and wherein the word line control unit increases the activation voltage level when the temperature increases during a read operation. ### Claim 6 (depends on 1) The electronic device according to claim 1, further comprising a processor which includes: a core unit configured to perform, based on a command inputted from an outside of the processor, an operation corresponding to the command, by using data; a cache memory unit configured to store data for performing the operation, data corresponding to a result of performing the operation, or an address of data for which the operation is performed; and a bus interface connected between the core unit and the cache memory unit, and configured to transmit data between the core unit and the cache memory unit, wherein the semiconductor memory unit that includes the variable resistance element is part of the cache memory unit in the processor. ### Claim 7 (depends on 1) The electronic device according to claim 1, further comprising a data storage system which includes: a storage device configured to store data and conserve stored data regardless of power supply; a controller configured to control input and output of data to and from the storage device according to a command inputted form an outside; a temporary storage device configured to temporarily store data exchanged between the storage device and the outside; and an interface configured to perform communication between at least one of the storage device, the controller and the temporary storage device and the outside, wherein the semiconductor memory unit that includes the variable resistance element is part of the storage device or the temporary storage device in the data storage system. ### Claim 8 (depends on 1) The electronic device according to claim 1, wherein when the decrease in resistance of the variable resistance element according to the increase of temperature is larger than the sum of the increase in resistance of the selecting element according to the increase of temperature, the increase in resistance of the first line according to the increase of temperature, and the increase in resistance of the second line according to the increase of temperature, the write current and the read current increase with the increase of temperature, wherein the voltage adjuster increases the back bias voltage level with the decrease of temperature, wherein the word line control unit increases the activation voltage level with the decrease of temperature. ### Claim 9 (depends on 1) The electronic device according to claim 1, wherein when the decrease in resistance of the variable resistance element according to the increase of temperature is equal to the sum of the increase in resistance of the selecting element according to the increase of temperature, the increase in resistance of the first line according to the increase of temperature, and the increase in resistance of the second line according to the increase of temperature, the write current and the read current are maintained at set values, wherein the voltage adjuster increases the back bias voltage level when the temperature decreases during a write operation, and maintains the back bias voltage level at a set voltage level during a read operation, wherein the word line control unit increases the activation voltage level when the temperature decreases during a write operation, and maintains the activation voltage level at a set voltage level during a read operation. ### Claim 10 An electronic device comprising a semiconductor memory unit which comprises: a first global line; a second global line; a plurality of cell arrays each including a plurality of storage cells including a selecting element, a variable resistance element of which resistance changes based on a current flowing across the variable resistance element, a first line coupled to one ends of the plurality of storage cells, and a second line coupled to the other ends of the plurality of storage cells; a plurality of word lines, each coupled to a selecting element of a corresponding storage cell; a plurality of first transistors connected to the first global line and the respective cell arrays; a plurality of second transistors connected to the second global line and the respective cell arrays; a voltage adjuster configured to adjust the voltage levels of back bias voltages applied to the selecting elements, the plurality of first transistors, and the plurality of second transistors in accordance with a temperature change; an access control unit configured to provide a write current or a read current to a selected storage cell among the plurality of storage cells, and a word line control unit configured to adjust an activation voltage level applied to the selected word line in accordance with a temperature change, wherein, when a decrease in resistance of the variable resistance element according to an increase of temperature is smaller than a sum of an increase in resistance of the selecting element according to the increase of temperature, an increase in resistance of the first transistors according to the increase of temperature, an increase in resistance of the second transistors according to the increase of temperature, an increase in resistance of the first line according to the increase of temperature, an increase in resistance of the second line according to the increase of temperature, an increase in resistance of the first global line according to the increase of temperature, and an increase in resistance of the second global line according to the increase of temperature, the write current and the read current decrease with the increase of temperature, wherein the voltage adjuster increases the back bias voltage level with a decrease of temperature, and wherein the word line control unit increases the activation voltage level with the decrease of temperature. ### Claim 11 An electronic device comprising a semiconductor memory unit which comprises: a first global line; a second global line; a plurality of cell arrays each including a plurality of storage cells including a selecting element, a variable resistance element of which resistance changes based on a current flowing across the variable resistance element, a first line coupled to one ends of the plurality of storage cells, and a second line coupled to the other ends of the plurality of storage cells; a plurality of word lines, each coupled to a selecting element of a corresponding storage cell; a plurality of first transistors connected to the first global line and the respective cell arrays; a plurality of second transistors connected to the second global line and the respective cell arrays; a voltage adjuster configured to adjust the voltage levels of back bias voltages applied to the selecting elements, the plurality of first transistors, and the plurality of second transistors in accordance with a temperature change; an access control unit configured to provide a write current or a read current to a selected storage cell among the plurality of storage cells, and a word line control unit configured to adjust an activation voltage level applied to the selected word line in accordance with a temperature change, when a decrease in resistance of the variable resistance element according to an increase of temperature is equal to a sum of the increase in resistance of the selecting element according to the increase of temperature, an increase in resistance of the first transistors according to the increase of temperature, an increase in resistance of the second transistors according to the increase of temperature, an increase in resistance of the first line according to the increase of temperature, an increase in resistance of the second line according to the increase of temperature, an increase in resistance of the first global line according to the increase of temperature, and an increase in resistance of the second global line according to the increase of temperature, the write current and the read current are maintained at set values, wherein the voltage adjuster increases the back bias voltage level with a decrease of temperature, wherein the word line control unit increases the activation voltage level with the decrease of temperature. ### Claim 12 An electronic device comprising a semiconductor memory unit which comprises: a plurality of storage cells each comprising a variable resistance element of which resistance value changes with a current flowing across the variable resistance element and a selecting element coupled to one end of the variable resistance element; a plurality of word lines, each coupled to a selecting element of a corresponding storage cell of the plurality of storage cells; a first line coupled to one ends of the plurality of storage cells; a second line coupled to the other ends of the plurality of storage cells; a voltage adjuster configured to adjust the voltage levels of back bias voltages of the selecting elements of the plurality of storage cells in accordance with a temperature change; an access control unit electrically coupled to the first and second lines and providing a write current or a read current to a selected storage cell among the plurality of storage cells; and a word line control unit configured to adjust an activation voltage level applied to the selected word line in accordance with a temperature change, and wherein, when a decrease in resistance of the variable resistance element according to an increase of temperature is smaller than a sum of an increase in resistance of the selecting element according to the increase of temperature, an increase in resistance of the first transistors according to the increase of temperature, an increase in resistance of the second transistors according to the increase of temperature, an increase in resistance of the first line according to the increase of temperature, an increase in resistance of the second line according to the increase of temperature, an increase in resistance of the first global line according to the increase of temperature, and an increase in resistance of the second global line according to the increase of temperature, the write current and the read current decrease with the increase of temperature. ### Claim 13 (depends on 12) The electronic device of claim 12, wherein the voltage adjuster increases the back bias voltage level when the temperature increases during a write operation in case where the decrease of the switching current according to the increase of temperature is smaller than the decrease of the write current according to the increase of temperature, increases the back bias voltage level when the temperature decreases during the write operation in case where the decrease of the switching current according to the increase of temperature is larger than the decrease of the write current according to the decrease of temperature, and maintains the back bias voltage level at a set voltage level during the write operation in case where the decrease of the switching current according to the increase of temperature is equal to the decrease of the write current according to the increase of temperature. ### Claim 14 (depends on 13) The electronic device of claim 13, wherein the word line control unit increases the activation voltage level when the temperature increases during a write operation in case where the decrease of the switching current according to the increase of temperature is smaller than the decrease of the write current according to the increase of temperature, increases the activation voltage level when the temperature decreases during the write operation in case where the decrease of the switching current according to the increase of temperature is larger than the decrease of the write current according to the decrease of temperature, and maintains the activation voltage level at a set voltage level during the write operation in case where the decrease of the switching current according to the increase of temperature is equal to the decrease of the write current according to the increase of temperature variable resistance element. ### Claim 15 (depends on 14) The electronic device of claim 14, wherein the voltage adjuster increases the back bias voltage level when the temperature increases during a read operation, wherein the word line control unit increases the activation voltage level when the temperature increases during a read operation. ### Claim 16 (depends on 15) The electronic device according to claim 15, further include a select signal generator configured to generate a plurality of select signals corresponding to the respective cell arrays, activate one or more of the plurality of select signals, and adjust the voltage levels of the activated select signals according to the temperature, wherein the select signal generator increases the voltage level of the activated select signal when the temperature decreases during the write operation in case where the decrease of the switching current according to the increase of temperature is larger than the decrease of the write current according to the increase of temperature. ### Claim 17 (depends on 15) The electronic device according to claim 15, further include a select signal generator configured to generate a plurality of select signals corresponding to the respective cell arrays, activate one or more of the plurality of select signals, and adjust the voltage levels of the activated select signals according to the temperature, wherein the select signal generator maintains the voltage level of the activated select signal at a set level during the write operation in case where the decrease of the switching current according to the increase of temperature is equal to the decrease of the write current according to the increase of temperature. ### Claim 18 (depends on 13) The electronic device according to claim 13, further include a select signal generator configured to generate a plurality of select signals corresponding to the respective cell arrays, activate one or more of the plurality of select signals, and adjust the voltage levels of the activated select signals according to the temperature, wherein the select signal generator increases the voltage level of the activated select signal when the temperature increases during a write operation in case where the decrease of the switching current according to the increase of temperature is smaller than the decrease of the write current according to the increase of temperature.