# US 9,437,267 B2 · Storage element and memory > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,437,267 B2 - Document ID: US9437267B2 - Status: Granted - Kind: B2 - Application number: 14/359,488 - Filed: 2012-11-19 - Published: 2014-11-06 - Granted: 2016-09-06 - Earliest claimed: 2011-11-30 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Yutaka Higo; Masanori Hosomi; Hiroyuki Ohmori; Kazuhiro Bessho; Tetsuya Asayama; Kazutaka Yamane; Hiroyuki Uchida - Web page: https://patentgrep.com/patent/US9437267B2 ## CPC - G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell} - G11C 11/1659: {Cell access} - G11C 11/1675: {Writing or programming circuits or methods} - H01F 10/3254: {the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]} - H01F 10/3286: {Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy} - H10N 50/10: Magnetoresistive devices - H10N 50/80: Constructional details - G11C 11/5607: {using magnetic storage elements} - H01F 10/3272: {by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets} - H01F 10/329: {Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect} - G11C: STATIC STORES (semiconductor memory devices H10B) - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR ## Abstract A storage element includes a magnetization fixed layer, and a magnetization free layer. The magnetization fixed layer includes a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjacent ferromagnetic layers. The magnetization directions of the ferromagnetic layers are inclined with respect to a magnetization direction of the magnetization fixed layer. ## Claims ### Claim 1 A storage element comprising: a magnetization fixed layer; a magnetization free layer including a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjacent ferromagnetic layers; and a nonmagnetic intermediate layer that is a tunnel insulating layer and is formed between the magnetization fixed layer and the magnetization free layer, wherein magnetization directions of the ferromagnetic layers are inclined with respect to a magnetization direction of the magnetization fixed layer. ### Claim 2 (depends on 1) The magnetic storage element according to claim 1, wherein a magnetization direction of the magnetization fixed layer is in a direction perpendicular to a film surface of the magnetization fixed layer. ### Claim 3 (depends on 1) The magnetic storage element according to claim 1, further comprising an underlying layer and an anti-ferromagnetic layer formed between the underlying layer and the magnetization fixed layer. ### Claim 4 (depends on 1) The magnetic storage element according to claim 1, wherein the magnetization free layer includes a first ferromagnetic layer and a second ferromagnetic layer with one of the coupling layers formed therebetween, wherein a perpendicular axis extends in a direction perpendicular to a film surface of the magnetization free layer through the magnetization free layer, wherein an angle between the direction of magnetization of the first ferromagnetic layer and the perpendicular axis is θ1, and wherein an angle between the direction of the magnetization of the second ferromagnetic layer and the perpendicular axis is defined as θ2. ### Claim 5 (depends on 4) The magnetic storage element according to claim 4, wherein a reference line passes through a center of the first and second ferromagnetic layers in a top view, and wherein when a first magnetization M1 of the first ferromagnetic layer and a second magnetization M2 of the second ferromagnetic layer are respectively projected onto film surfaces of the first and second ferromagnetic layers, an angle between the direction of the first magnetization M1 and the reference line is defined as φ1, and the angle between the direction of the second magnetization M2 and the reference line is defined as φ2. ### Claim 6 (depends on 5) The magnetic storage element according to claim 5, wherein a magnetic energy ε of the storage layer 24 is expressed by the following Equation 2: ∈=Δ1 sin2θ1+Δ2 sin2θ2−Δex(cos θ1 cos θ2+sin θ1 sin θ2 cos(φ1−φ2)) wherein a first energy difference obtained by subtracting a strength of the magnetic energy at the time the first magnetization M1 is directed to the perpendicular direction (θ1=0 degree) from a strength of the magnetic energy at the time the first magnetization M1 is directed to an in-surface direction (θ1=90 degrees) is indicated by Δ1, wherein a second energy difference obtained by subtracting a strength of the magnetic energy at the time the second magnetization M2 is directed to the perpendicular direction (θ2=0 degree) from a strength of the magnetic energy at the time the second magnetization M2 is directed to an in-surface direction (θ2=90 degrees) is indicated by Δ2, and wherein a strength of the magnetic coupling energy between the fist magnetization M1 and the second magnetization M2 is indicated by Δex. ### Claim 7 (depends on 6) The magnetic storage element according to claim 6, wherein one of the following conditions apply: (a) if a first energy difference Δ1 is positive, the second energy difference Δ2 is negative; and (b) if a first energy difference Δ1 is negative, the second energy difference Δ2 is positive. ### Claim 8 (depends on 6) The magnetic storage element according to claim 6, wherein the following condition is satisfied: abs(Δex)