# US 9,437,223 B2 · Magnetoresistive element, method of manufacturing magnetoresistive element, magnetic head, and magnetic recording and reading apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,437,223 B2 - Document ID: US9437223B2 - Status: Granted - Kind: B2 - Application number: 14/838,914 - Filed: 2015-08-28 - Published: 2016-04-07 - Granted: 2016-09-06 - Earliest claimed: 2014-10-01 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Kabushiki Kaisha Toshiba - Inventors: Satoshi Shirotori; Yuuzo Kamiguchi; Masayuki Takagishi; Hitoshi Iwasaki - Web page: https://patentgrep.com/patent/US9437223B2 ## CPC - G11B 5/3903: {using magnetic thin film layers or their effects, the films being part of integrated structures} - G01R 33/093: {using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00)} - G01R 33/098: {comprising tunnel junctions, e.g. tunnel magnetoresistance sensors} - G11B 5/1272: {Assembling or shaping of elements (G11B5/1278 takes precedence)} - G11B 5/3906: {Details related to the use of magnetic thin film layers or to their effects} - G11B 5/398: {Specially shaped layers} - H10N 50/01: Manufacture or treatment - H10N 50/10: Magnetoresistive devices - H10N 50/80: Constructional details - G11B: INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer G01D9/00; recording or playback apparatus using mechanically marked tape, e.g. punched paper tape, or using unit records, e.g. punched or magnetically marked cards G06K; transferring data from one type of record carrier to another G06K1/18; circuits for coupling output of reproducer to radio receiver H04B1/20; gramophone pick-ups or like acoustic electromechanical transducers or circuits therefor H04R) - G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12) - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR ## Abstract A magnetoresistive element according to an embodiment includes: a multilayer element including a first magnetic layer, a magnetization direction of the first magnetic layer being pinned, a nonmagnetic layer disposed on the first magnetic layer, a second magnetic layer disposed in a first region on the nonmagnetic layer, a magnetization direction of the second magnetic layer being pinned and antiparallel to the magnetization direction of the first magnetic layer, and a third magnetic layer disposed in a second region that is different from the first region on the nonmagnetic layer near one of two opposite end faces of the nonmagnetic layer, a magnetization direction of the third magnetic layer being changeable by an external magnetic field, a lower face of the nonmagnetic layer being in contact with an upper face of the first magnetic layer. ## Claims ### Claim 1 A magnetoresistive element comprising: a multilayer element including a first magnetic layer, a magnetization direction of the first magnetic layer being pinned, a nonmagnetic layer disposed on the first magnetic layer, a second magnetic layer disposed in a first region on the nonmagnetic layer, a magnetization direction of the second magnetic layer being pinned and antiparallel to the magnetization direction of the first magnetic layer, and a third magnetic layer disposed in a second region that is different from the first region on the nonmagnetic layer near one of two opposite end faces of the nonmagnetic layer, a magnetization direction of the third magnetic layer being changeable by an external magnetic field, a lower face of the nonmagnetic layer being in contact with an upper face of the first magnetic layer, wherein A1 is a junction area between the nonmagnetic layer and the first magnetic layer, A2 is a junction area between the nonmagnetic layer and the second magnetic layer, and A3 is a junction area between the nonmagnetic layer and the third magnetic layer, and a relationship of A1>A2>A3 is satisfied. ### Claim 2 (depends on 1) The magnetoresistive element according to claim 1, further comprising: a first interface layer disposed between the first magnetic layer and the nonmagnetic layer, a second interface layer disposed between the second magnetic layer and the nonmagnetic layer, and a third interface layer disposed between the third magnetic layer and the nonmagnetic layer. ### Claim 3 (depends on 1) The magnetoresistive element according to claim 1, further comprising a first magnetic shield and a second magnetic shield disposed to sandwich the multilayer element, the first magnetic shield connecting to the first magnetic layer, and the second magnetic shield connecting to the third magnetic layer. ### Claim 4 (depends on 3) The magnetoresistive element according to claim 3, further comprising: a first antiferromagnetic layer disposed between the first magnetic shield and the first magnetic layer to pin the magnetization direction of the first magnetic layer; and a second antiferromagnetic layer disposed on the second magnetic layer to pin the magnetization direction of the second magnetic layer, wherein the second antiferromagnetic layer is disposed to be away from the one of the two opposite end faces of the nonmagnetic layer, and the second magnetic shield extends into a space between the second antiferromagnetic layer and the one of the two opposite end faces. ### Claim 5 (depends on 3) The magnetoresistive element according to claim 3, wherein the third magnetic layer includes a multilayer structure with layers of at least a first magnetic material, a nonmagnetic material, and a second magnetic material, a magnetization of the first magnetic material and a magnetization of a second magnetic material being antiparallel to each other, an output signal being obtained when the magnetizations are rotated in response to an external magnetic field. ### Claim 6 (depends on 3) The magnetoresistive element according to claim 3, further comprising: a first antiferromagnetic layer disposed between the first magnetic shield and the first magnetic layer to pin the magnetization direction of the first magnetic layer; and a second antiferromagnetic layer disposed on the second magnetic layer to pin the magnetization direction of the second magnetic layer, wherein the second magnetic shield extends above the second antiferromagnetic layer. ### Claim 7 (depends on 3) The magnetoresistive element according to claim 3, further comprising: a first antiferromagnetic layer disposed between the first magnetic shield and the first magnetic layer to pin the magnetization direction of the first magnetic layer; and a second antiferromagnetic layer disposed on the second magnetic layer to pin the magnetization direction of the second magnetic layer, wherein the second magnetic shield connects to the second antiferromagnetic layer. ### Claim 8 (depends on 1) A magnetic reading head comprising the magnetoresistive element according to claim 1 to serve as a reading element, a current being caused to flow between the first magnetic layer and the second magnetic layer so that spin electrons are accumulated in the nonmagnetic layer, and a voltage being measured between the second magnetic layer and the third magnetic layer. ### Claim 9 (depends on 1) The magnetoresistive element according to claim 1, wherein the first magnetic layer includes a first magnetic sub-layer, a second magnetic sub-layer, and a magnetic coupling sub-layer disposed between the first magnetic sub-layer and the second magnetic sub-layer, a magnetization of the first magnetic sub-layer and a magnetization of a second magnetic sub-layer being antiparallel to each other.