# US 9,436,091 B2 · Patterning method using surface plasmon > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,436,091 B2 - Document ID: US9436091B2 - Status: Granted - Kind: B2 - Application number: 14/444,255 - Filed: 2014-07-28 - Published: 2015-08-20 - Granted: 2016-09-06 - Earliest claimed: 2014-02-19 - Assignees: Samsung Display Co., Ltd. - Applicants: Samsung Display Co., Ltd. - Inventors: Yong Son; Min Kang; Bong-Yeon Kim; Dong-Eon Lee; Hyun-joo Lee - Web page: https://patentgrep.com/patent/US9436091B2 ## CPC - G03F 7/2016: {Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing} - G03F 7/70375: {Multiphoton lithography or multiphoton photopolymerization; Imaging systems comprising means for converting one type of radiation into another type of radiation} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A method for forming a fine pattern includes forming an etching target material layer on a substrate, forming a first photoresist layer on the etching target material layer, forming a metal pattern on the first photoresist layer, the metal pattern having a plurality of lines and thin film lines alternately arranged, the lines having predetermined linewidth and thickness and are spaced apart from each other by a predetermined distance, exciting surface plasmons in the metal pattern by light irradiation to produce a surface plasmon resonance that exposes a fine first pattern shape in the first photoresist layer, forming a first photoresist pattern by removing the metal pattern and developing the first photoresist layer, and etching the etching target material layer by using the first photoresist pattern as a mask. ## Claims ### Claim 1 A method of foming a pattern, comprising: forming an etching target material layer on a substrate; forming a first photoresist layer on the etching target material layer; forming a metal pattern on the first photoresist layer, the metal pattern in which a plurality of lines having predetermined linewidth and thickness are spaced apart from each other at a predetermined distance, wherein the metal pattern comprises a thin film portion between the lines adjacent to each other; exciting surface plasmons in the metal pattern by light irradiation to expose the first photoresist layer to form a first pattern shape; forming a first photoresist pattern by removing the metal pattern and developing the first photoresist layer; and etching the etching target material layer by using the first photoresist pattern as a mask. ### Claim 2 (depends on 1) The method of claim 1, wherein the thin film portion has a thickness of about 20 nm to about 50 nm. ### Claim 3 (depends on 1) The method of claim 1, wherein the space between the adjacent lines is about 100 nm to about 300 nm. ### Claim 4 (depends on 1) The method of claim 1, wherein the light irradiation comprises irradiating light with larger wavelength than the space between the adjacent lines. ### Claim 5 (depends on 1) The method of claim 1, wherein the light irradiation comprises irradiating i-ray. ### Claim 6 (depends on 1) The method of claim 1, wherein the first photoresist pattern has higher pattern density than the metal pattern. ### Claim 7 (depends on 1) The method of claim 1, wherein the forming of the metal pattern comprises: forming a metal layer on the first photoresist layer; forming a second photoresist layer on the metal layer; patterning the second photoresist layer into a second pattern; etching the metal layer by using the patterned second photoresist layer as a mask and removing the second photoresist layer; and forming a deposition layer on the etched metal layer and the exposed first photoresist layer by performing metal deposition. ### Claim 8 (depends on 1) The method of claim 1, wherein the forming of the metal pattern comprises: forming a metal layer on the first photoresist layer; and stamping the metal layer with a die engraved to have a pattern shape. ### Claim 9 (depends on 1) The method of claim 1, wherein the metal layer is formed of any one selected from a group consisting of gold (Au), aluminum (Al), silver (Ag), chromium (Cr), nickel (Ni), titanium (Ti), tantalum (Ta), and tungsten (W). ### Claim 10 (depends on 1) The method of claim 1, wherein the etching target material layer comprises at least one of a metal and a transparent conductive oxide (TCO). ### Claim 11 A method of foming a pattern, comprising: forming a first photoresist layer on a substrate; forming a metal pattern on the first photoresist layer, the metal pattern in which a plurality of lines having predetermined linewidth and thickness are spaced apart from each other at a predetermined distance, wherein the metal pattern comprises a thin film portion between the lines adjacent to each other; exciting surface plasmons in the metal pattern by light irradiation to expose the first photoresist layer to have a first pattern shape; forming a first photoresist pattern by removing the metal pattern and developing the first photoresist layer; depositing a pattern-forming material on the first photoresist pattern and the substrate; and removing the first photoresist pattern. ### Claim 12 (depends on 11) The method of claim 11, wherein the thin film portion has a thickness of about 20 nm to about 50 nm. ### Claim 13 (depends on 11) The method of claim 11, wherein the space between the adjacent lines is about 100 nm to about 300 nm. ### Claim 14 (depends on 11) The method of claim 11, wherein the light irradiation comprises irradiating light with larger wavelength than the space between the adjacent lines. ### Claim 15 (depends on 11) The method of claim 11, wherein the forming of the metal pattern comprises: forming a metal layer on the first photoresist layer; forming a second photoresist layer on the metal layer; patterning the second photoresist layer into a second pattern; etching the metal layer by using the patterned second photoresist layer as a mask and removing the second photoresist layer; and forming a deposition layer on the etched metal layer and the exposed first photoresist layer by performing metal deposition. ### Claim 16 (depends on 11) The method of claim 11, wherein the forming of the metal pattern comprises: forming a metal layer on the first photoresist layer; and pressing the metal layer by using a master engraved with a pattern shape. ### Claim 17 (depends on 11) The method of claim 11, wherein the pattern-forming material comprises at least one of a metal and a transparent conductive oxide (TCO). ### Claim 18 (depends on 17) The method of claim 17, wherein the pattern forming material has a linewidth in the range of 30 to 100 nm and is less than each of the predetermined linewidth and the predetermined distance of the metal pattern and the wavelength of light used to irradiate the metal pattern. ### Claim 19 A method of foming a pattern in an etching target material layer, comprising: providing a substrate; forming the etching target material layer on the substrate; forming a first photoresist layer on the etching target material layer; forming a metal pattern on the first photoresist layer, the metal pattern including a plurality of first line portions and a plurality of second line portions alternately arranged, each first line portion having a first thickness and having a first linewidth, and each second line portion having a second thickness that is smaller than the first thickness, having a second linewidth and occupying a space between adjacent first line portions; exposing a first pattern shape in the first photoresist layer by exciting surface plasmons in the metal pattern by exposure to light irradiation; forming a first photoresist pattern corresponding to the first pattern shape in the first photoresist layer by removing the metal pattern and developing the first photoresist layer; and forming the pattern in the etching target material layer by etching the etching target material layer by using the first photoresist pattern as an etch mask. ### Claim 20 (depends on 19) The method of claim 19, wherein the first thickness is in the range of about 70 to 200 nm, and the second thickness is in the range of about 20 to 50 nm.