# US 9,436,084 B2 · Positive-working photoresist composition for thick film formation

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- Number: US 9,436,084 B2
- Document ID: US9436084B2
- Status: Granted
- Kind: B2
- Application number: 11/792,752
- Filed: 2006-03-22
- Published: 2008-01-31
- Granted: 2016-09-06
- Earliest claimed: 2005-03-23
- Assignees: Tokyo Ohka Kogyo Co., Ltd.
- Applicants: Koichi Misumi; Toshiki Okui
- Inventors: Koichi Misumi; Toshiki Okui
- Web page: https://patentgrep.com/patent/US9436084B2

## CPC

- G03F 7/0397: {the macromolecular compound having an alicyclic moiety in a side chain}
- C07D 251/02: not condensed with other rings
- C08F 220/1808: {C8-(meth)acrylate, e.g. isooctyl (meth)acrylate or 2-ethylhexyl (meth)acrylate}
- C08F 220/1811: {C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate}
- G03F 7/004: Photosensitive materials (G03F7/12, G03F7/14 take precedence)
- G03F 7/0392: {the macromolecular compound being present in a chemically amplified positive photoresist composition}
- H10P 76/2041: {Photolithographic processes}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- C07D: HETEROCYCLIC COMPOUNDS (macromolecular compounds C08)
- C08F: MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The invention provides a chemical-amplification positive-working photoresist composition suitable for forming a resist film of a relatively large thickness on a substrate in addition to other advantages. The inventive composition contains (A) a photoacid-generating agent, (B) an alkali-insoluble resin capable of being imparted with increased alkali-solubility by interaction with an acid, (C) an alkali-soluble resin and (D) an organic solvent, wherein the component (C) is (C1) a polyhydroxystyrene or a copolymer having at least 80% by mass of the hydroxystyrene units in an amount not exceeding 15 parts by mass relative to 100 parts by mass of the total amount of the components (B) and (C).

## Claims

### Claim 1

A chemical-amplification positive-working photoresist composition for the formation of a photoresist layer on a substrate surface which comprises:
(A) a photoacid generating agent; (B) an alkali-insoluble resin capable of being imparted with an increased alkali solubility by interacting with an acid; (C) an alkali-soluble resin; and (D) an organic solvent,
wherein the component (B) is a resin containing the monomeric units represented by the following formula:
wherein R1 is a hydrogen atom or a methyl group, R2 is an alkyl group having 1 to 5 carbon atoms and X is a divalent hydrocarbon group to form a cyclic structure of 5 to 20 carbon atom members including the carbon atom to which the group denoted by X is bonded, and
wherein the component (C) includes (C1) a copolymer of hydroxystyrene and styrene, and contains at least 80% by mass of hydroxystyrene units,
with the proviso that the content of the component (C1) relative to 100 parts by mass of the total amount of the components (B) and (C) does not exceed 15 parts by mass.

### Claim 2 (depends on 1)

The chemical-amplification positive-working photoresist composition according to claim 1, wherein the component (C) is a combination of the component (C1) and (C2) a novolac resin.

### Claim 3 (depends on 1)

The chemical-amplification positive-working photoresist composition according to claim 1, wherein the component (D) is propyleneglycol methyl ether acetate or a mixture thereof with another organic solvent.

### Claim 4 (depends on 1)

The chemical-amplification positive-working photoresist composition according to claim 1, wherein the component (B) has a mass-average molecular weight in the range of 10,000-600,000.

### Claim 5 (depends on 1)

The chemical-amplification positive-working photoresist composition according to claim 1, wherein the content of the component (C1) relative to 100 parts by mass of the total amount of the components (B) and (C) does not exceed 10 parts by mass.